Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTY12N06T

IXTY12N06T

MOSFET N-CH 60V 12A TO252

IXYS
2,142 -

RFQ

IXTY12N06T

Ficha técnica

Tube TrenchMV™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 85mOhm @ 6A, 10V 4V @ 25µA 3.4 nC @ 10 V ±20V 256 pF @ 25 V - 33W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH16N50P

IXFH16N50P

MOSFET N-CH 500V 16A TO247AD

IXYS
2,024 -

RFQ

IXFH16N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 400mOhm @ 8A, 10V 5.5V @ 2.5mA 43 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP60N20T

IXTP60N20T

MOSFET N-CH 200V 60A TO220AB

IXYS
3,356 -

RFQ

IXTP60N20T

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 40mOhm @ 30A, 10V 5V @ 250µA 73 nC @ 10 V ±20V 4530 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFA270N06T3

IXFA270N06T3

MOSFET N-CH 60V 270A TO263AA

IXYS
3,566 -

RFQ

IXFA270N06T3

Ficha técnica

Tube HiperFET™, TrenchT3™ Active N-Channel MOSFET (Metal Oxide) 60 V 270A (Tc) 10V 3.1mOhm @ 100A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 12600 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP140N12T2

IXTP140N12T2

MOSFET N-CH 120V 140A TO220AB

IXYS
2,196 -

RFQ

IXTP140N12T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 120 V 140A (Tc) 10V 10mOhm @ 70A, 10V 4.5V @ 250µA 174 nC @ 10 V ±20V 9700 pF @ 25 V - 577W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP01N100D

IXTP01N100D

MOSFET N-CH 1000V 400MA TO220AB

IXYS
2,674 -

RFQ

IXTP01N100D

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 400mA (Tc) 0V 80Ohm @ 50mA, 0V 4.5V @ 25µA 5.8 nC @ 5 V ±20V 100 pF @ 25 V Depletion Mode 1.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ52N30P

IXTQ52N30P

MOSFET N-CH 300V 52A TO3P

IXYS
2,497 -

RFQ

IXTQ52N30P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 300 V 52A (Tc) 10V 66mOhm @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 3490 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP130N15X4

IXTP130N15X4

MOSFET N-CH 150V 130A TO220

IXYS
3,376 -

RFQ

IXTP130N15X4

Ficha técnica

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 8.5mOhm @ 70A, 10V 4.5V @ 250µA 87 nC @ 10 V ±20V 4770 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP2R4N120P

IXTP2R4N120P

MOSFET N-CH 1200V 2.4A TO220AB

IXYS
2,752 -

RFQ

IXTP2R4N120P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 2.4A (Tc) 10V 7.5Ohm @ 500mA, 10V 4.5V @ 250µA 37 nC @ 10 V ±20V 1207 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP36P15P

IXTP36P15P

MOSFET P-CH 150V 36A TO220AB

IXYS
2,466 -

RFQ

IXTP36P15P

Ficha técnica

Tube Polar P3™ Active P-Channel MOSFET (Metal Oxide) 150 V 36A (Tc) 10V 110mOhm @ 18A, 10V 4.5V @ 250µA 55 nC @ 10 V ±20V 3100 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA180N10T2

IXFA180N10T2

MOSFET N-CH 100V 180A TO263

IXYS
2,076 -

RFQ

IXFA180N10T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6mOhm @ 50A, 10V 4V @ 250µA 185 nC @ 10 V ±20V 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFP30N25X3

IXFP30N25X3

MOSFET N-CHANNEL 250V 30A TO220

IXYS
2,980 -

RFQ

IXFP30N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 30A (Tc) 10V 60mOhm @ 15A, 10V 4.5V @ 500µA 21 nC @ 10 V ±20V 1450 pF @ 25 V - 176W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ180N10T

IXTQ180N10T

MOSFET N-CH 100V 180A TO3P

IXYS
2,671 -

RFQ

IXTQ180N10T

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6.4mOhm @ 25A, 10V 4.5V @ 250µA 151 nC @ 10 V ±30V 6900 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ460P2

IXTQ460P2

MOSFET N-CH 500V 24A TO3P

IXYS
119 -

RFQ

IXTQ460P2

Ficha técnica

Tube PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 270mOhm @ 12A, 10V 4.5V @ 250µA 48 nC @ 10 V ±30V 2890 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP180N10T2

IXFP180N10T2

MOSFET N-CH 100V 180A TO220AB

IXYS
3,145 -

RFQ

IXFP180N10T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6mOhm @ 50A, 10V 4V @ 250µA 185 nC @ 10 V ±20V 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP120P065T

IXTP120P065T

MOSFET P-CH 65V 120A TO220AB

IXYS
3,536 -

RFQ

IXTP120P065T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 65 V 120A (Tc) 10V 10mOhm @ 500mA, 10V 4V @ 250µA 185 nC @ 10 V ±15V 13200 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP34N65X2

IXFP34N65X2

MOSFET N-CH 650V 34A TO220AB

IXYS
3,162 -

RFQ

IXFP34N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 105mOhm @ 17A, 10V 5.5V @ 2.5mA 56 nC @ 10 V ±30V 3330 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH18N60P

IXFH18N60P

MOSFET N-CH 600V 18A TO247AD

IXYS
3,149 -

RFQ

IXFH18N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 400mOhm @ 500mA, 10V 5.5V @ 2.5mA 50 nC @ 10 V ±30V 2500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH130N10T

IXTH130N10T

MOSFET N-CH 100V 130A TO247

IXYS
2,861 -

RFQ

IXTH130N10T

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 9.1mOhm @ 25A, 10V 4.5V @ 250µA 104 nC @ 10 V ±20V 5080 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP14N85X

IXFP14N85X

MOSFET N-CH 850V 14A TO220AB

IXYS
2,005 -

RFQ

IXFP14N85X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 14A (Tc) 10V 550mOhm @ 500mA, 10V 5.5V @ 1mA 30 nC @ 10 V ±30V 1043 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 2427 Record«Prev1... 3637383940414243...122Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario