Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQD50N05-11L_GE3

SQD50N05-11L_GE3

MOSFET N-CH 50V 50A TO252AA

Vishay Siliconix
1,930 -

RFQ

SQD50N05-11L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 50 V 50A (Tc) 4.5V, 10V 11mOhm @ 45A, 10V 2.5V @ 250µA 52 nC @ 10 V ±20V 2106 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQR50N04-3M8_GE3

SQR50N04-3M8_GE3

MOSFET N-CH 40V 50A DPAK

Vishay Siliconix
1,906 -

RFQ

SQR50N04-3M8_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 3.8mOhm @ 20A, 10V 3.5V @ 250µA 105 nC @ 10 V ±20V 6700 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR120DP-T1-RE3

SIR120DP-T1-RE3

MOSFET N-CH 80V 24.7A/106A PPAK

Vishay Siliconix
2,850 -

RFQ

SIR120DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 24.7A (Ta), 106A (Tc) 7.5V, 10V 3.55mOhm @ 15A, 10V 3.5V @ 250µA 94 nC @ 10 V ±20V 4150 pF @ 40 V - 5.4W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISH106DN-T1-GE3

SISH106DN-T1-GE3

MOSFET N-CH 20V 12.5A PPAK

Vishay Siliconix
1,492 -

RFQ

SISH106DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 12.5A (Ta) 2.5V, 4.5V 6.2mOhm @ 19.5A, 4.5V 1.5V @ 250µA 27 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHG22N65E-GE3

SIHG22N65E-GE3

MOSFET N-CH 650V 22A TO247AC

Vishay Siliconix
3,831 -

RFQ

SIHG22N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2415 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG32N50D-E3

SIHG32N50D-E3

MOSFET N-CH 500V 30A TO247AC

Vishay Siliconix
3,135 -

RFQ

SIHG32N50D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 150mOhm @ 16A, 10V 5V @ 250µA 96 nC @ 10 V ±30V 2550 pF @ 100 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP24N65EF-GE3

SIHP24N65EF-GE3

MOSFET N-CH 650V 24A TO220AB

Vishay Siliconix
3,539 -

RFQ

SIHP24N65EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 156mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±20V 2656 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF35N60E-GE3

SIHF35N60E-GE3

MOSFET N-CHANNEL 600V 32A TO220

Vishay Siliconix
3,130 -

RFQ

SIHF35N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 94mOhm @ 17A, 10V 4V @ 250µA 132 nC @ 10 V ±30V 2760 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA24N65EF-E3

SIHA24N65EF-E3

MOSFET N-CHANNEL 650V 24A TO220

Vishay Siliconix
3,787 -

RFQ

SIHA24N65EF-E3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 156mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2774 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQ4483BEEY-T1_GE3

SQ4483BEEY-T1_GE3

MOSFET P-CHANNEL 30V 22A 8SOIC

Vishay Siliconix
8,653 -

RFQ

SQ4483BEEY-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 22A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V 2.5V @ 250µA 113 nC @ 10 V ±20V - - 7W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFRC20TRLPBF-BE3

IRFRC20TRLPBF-BE3

MOSFET N-CH 600V 2A DPAK

Vishay Siliconix
2,098 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4430BDY-T1-E3

SI4430BDY-T1-E3

MOSFET N-CH 30V 14A 8SO

Vishay Siliconix
1,678 -

RFQ

SI4430BDY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 4.5mOhm @ 20A, 10V 3V @ 250µA 36 nC @ 4.5 V ±20V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF820STRRPBF

IRF820STRRPBF

MOSFET N-CH 500V 2.5A D2PAK

Vishay Siliconix
1,596 -

RFQ

IRF820STRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4190ADY-T1-GE3

SI4190ADY-T1-GE3

MOSFET N-CH 100V 18.4A 8SO

Vishay Siliconix
3,640 -

RFQ

SI4190ADY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 18.4A (Tc) 4.5V, 10V 8.8mOhm @ 15A, 10V 2.8V @ 250µA 67 nC @ 10 V ±20V 1970 pF @ 50 V - 3W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7892BDP-T1-GE3

SI7892BDP-T1-GE3

MOSFET N-CH 30V 15A PPAK SO-8

Vishay Siliconix
1,664 -

RFQ

SI7892BDP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 4.2mOhm @ 25A, 10V 3V @ 250µA 40 nC @ 4.5 V ±20V 3775 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHP690N60E-GE3

SIHP690N60E-GE3

MOSFET N-CH 600V 6.4A TO220AB

Vishay Siliconix
1,040 -

RFQ

SIHP690N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 6.4A (Tc) 10V 700mOhm @ 2A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 347 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB24N65E-E3

SIHB24N65E-E3

MOSFET N-CH 650V 24A D2PAK

Vishay Siliconix
3,257 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2740 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB24N65E-GE3

SIHB24N65E-GE3

MOSFET N-CH 650V 24A D2PAK

Vishay Siliconix
3,293 -

RFQ

SIHB24N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2740 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG21N65EF-GE3

SIHG21N65EF-GE3

MOSFET N-CH 650V 21A TO247AC

Vishay Siliconix
3,585 -

RFQ

SIHG21N65EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 106 nC @ 10 V ±30V 2322 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG120N60E-GE3

SIHG120N60E-GE3

MOSFET N-CH 600V 25A TO247AC

Vishay Siliconix
3,400 -

RFQ

SIHG120N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1562 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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