Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIR688DP-T1-GE3

SIR688DP-T1-GE3

MOSFET N-CH 60V 60A PPAK SO-8

Vishay Siliconix
2,117 -

RFQ

SIR688DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2.7V @ 250µA 66 nC @ 10 V ±20V 3105 pF @ 30 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP28N60EF-GE3

SIHP28N60EF-GE3

MOSFET N-CH 600V 28A TO220AB

Vishay Siliconix
3,976 -

RFQ

SIHP28N60EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 123mOhm @ 14A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2714 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF30N60E-GE3

SIHF30N60E-GE3

MOSFET N-CH 600V 29A TO220

Vishay Siliconix
3,502 -

RFQ

SIHF30N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHFB20N50K-E3

SIHFB20N50K-E3

MOSFET N-CH 500V 20A TO220AB

Vishay Siliconix
3,412 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 250mOhm @ 12A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 2870 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP448PBF

IRFP448PBF

MOSFET N-CH 500V 11A TO247-3

Vishay Siliconix
2,060 -

RFQ

IRFP448PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 600mOhm @ 6.6A, 10V 4V @ 250µA 84 nC @ 10 V ±20V 1900 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPE30PBF

IRFPE30PBF

MOSFET N-CH 800V 4.1A TO247-3

Vishay Siliconix
3,743 -

RFQ

IRFPE30PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7812DN-T1-E3

SI7812DN-T1-E3

MOSFET N-CH 75V 16A PPAK1212-8

Vishay Siliconix
2,396 -

RFQ

SI7812DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 75 V 16A (Tc) 4.5V, 10V 37mOhm @ 7.2A, 10V 3V @ 250µA 24 nC @ 10 V ±20V 840 pF @ 35 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHF28N60EF-GE3

SIHF28N60EF-GE3

MOSFET N-CH 600V 28A TO220

Vishay Siliconix
2,459 -

RFQ

SIHF28N60EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 123mOhm @ 14A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2714 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBF30STRLPBF

IRFBF30STRLPBF

MOSFET N-CH 900V 3.6A TO263

Vishay Siliconix
341 -

RFQ

IRFBF30STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7110DN-T1-GE3

SI7110DN-T1-GE3

MOSFET N-CH 20V 13.5A PPAK1212-8

Vishay Siliconix
2,850 -

RFQ

SI7110DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 13.5A (Ta) 4.5V, 10V 5.3mOhm @ 21.1A, 10V 2.5V @ 250µA 21 nC @ 4.5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4866DY-T1-E3

SI4866DY-T1-E3

MOSFET N-CH 12V 11A 8SO

Vishay Siliconix
2,179 -

RFQ

SI4866DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 12 V 11A (Ta) 2.5V, 4.5V 5.5mOhm @ 17A, 4.5V 600mV @ 250µA (Min) 30 nC @ 4.5 V ±8V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHF35N60EF-GE3

SIHF35N60EF-GE3

MOSFET N-CH 600V 32A TO220

Vishay Siliconix
3,011 -

RFQ

SIHF35N60EF-GE3

Ficha técnica

Bulk EF Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 97mOhm @ 17A, 10V 4V @ 250µA 134 nC @ 10 V ±30V 2568 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH125N60EF-T1GE3

SIHH125N60EF-T1GE3

MOSFET N-CH 600V 23A PPAK 8 X 8

Vishay Siliconix
3,239 -

RFQ

SIHH125N60EF-T1GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) EF Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHH28N60E-T1-GE3

SIHH28N60E-T1-GE3

MOSFET N-CH 600V 29A PPAK 8 X 8

Vishay Siliconix
3,697 -

RFQ

SIHH28N60E-T1-GE3

Ficha técnica

Bulk E Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 98mOhm @ 14A, 10V 5V @ 250µA 129 nC @ 10 V ±30V 2614 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHF16N50C-E3

SIHF16N50C-E3

MOSFET N-CH 500V 16A TO220

Vishay Siliconix
3,842 -

RFQ

SIHF16N50C-E3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 68 nC @ 10 V ±30V 1900 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP28N65EF-GE3

SIHP28N65EF-GE3

MOSFET N-CH 650V 28A TO220AB

Vishay Siliconix
3,728 -

RFQ

SIHP28N65EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 117mOhm @ 14A, 10V 4V @ 250µA 146 nC @ 10 V ±30V 3249 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB24N65ET1-GE3

SIHB24N65ET1-GE3

MOSFET N-CH 650V 24A TO263

Vishay Siliconix
3,709 -

RFQ

SIHB24N65ET1-GE3

Ficha técnica

Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2740 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB24N65ET5-GE3

SIHB24N65ET5-GE3

MOSFET N-CH 650V 24A TO263

Vishay Siliconix
2,448 -

RFQ

SIHB24N65ET5-GE3

Ficha técnica

Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2740 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4488DY-T1-GE3

SI4488DY-T1-GE3

MOSFET N-CH 150V 3.5A 8SO

Vishay Siliconix
1,680 -

RFQ

SI4488DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 3.5A (Ta) 10V 50mOhm @ 5A, 10V 2V @ 250µA (Min) 36 nC @ 10 V ±20V - - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHD14N60ET1-GE3

SIHD14N60ET1-GE3

N-CHANNEL 600V

Vishay Siliconix
1,933 -

RFQ

SIHD14N60ET1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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