Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFBC20L

IRFBC20L

MOSFET N-CH 600V 2.2A I2PAK

Vishay Siliconix
3,931 -

RFQ

IRFBC20L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC30L

IRFBC30L

MOSFET N-CH 600V 3.6A I2PAK

Vishay Siliconix
3,432 -

RFQ

IRFBC30L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40L

IRFBC40L

MOSFET N-CH 600V 6.2A I2PAK

Vishay Siliconix
3,367 -

RFQ

IRFBC40L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBF20L

IRFBF20L

MOSFET N-CH 900V 1.7A I2PAK

Vishay Siliconix
2,538 -

RFQ

IRFBF20L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL11N50A

IRFSL11N50A

MOSFET N-CH 500V 11A TO262-3

Vishay Siliconix
2,588 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 550mOhm @ 6.6A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1426 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI9640G

IRFI9640G

MOSFET P-CH 200V 6.1A TO220-3

Vishay Siliconix
3,119 -

RFQ

IRFI9640G

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 6.1A (Tc) 10V 500mOhm @ 3.7A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI9634G

IRFI9634G

MOSFET P-CH 250V 4.1A TO220-3

Vishay Siliconix
3,475 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 250 V 4.1A (Tc) 10V 1Ohm @ 2.5A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 680 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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