Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHB22N60ET5-GE3

SIHB22N60ET5-GE3

MOSFET N-CH 600V 21A TO263

Vishay Siliconix
3,788 -

RFQ

SIHB22N60ET5-GE3

Ficha técnica

Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7862ADP-T1-GE3

SI7862ADP-T1-GE3

MOSFET N-CH 16V 18A PPAK SO-8

Vishay Siliconix
3,439 -

RFQ

SI7862ADP-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 16 V 18A (Ta) 2.5V, 4.5V 3mOhm @ 29A, 4.5V 2V @ 250µA 80 nC @ 4.5 V ±8V 7340 pF @ 8 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7862ADP-T1-E3

SI7862ADP-T1-E3

MOSFET N-CH 16V 18A PPAK SO-8

Vishay Siliconix
3,833 -

RFQ

SI7862ADP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 16 V 18A (Ta) 2.5V, 4.5V 3mOhm @ 29A, 4.5V 2V @ 250µA 80 nC @ 4.5 V ±8V 7340 pF @ 8 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHFR320TR-GE3

SIHFR320TR-GE3

MOSFET N-CHANNEL 400V

Vishay Siliconix
1,957 -

RFQ

SIHFR320TR-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISH407DN-T1-GE3

SISH407DN-T1-GE3

MOSFET P-CH 20V 15.4A/25A PPAK

Vishay Siliconix
405 -

RFQ

SISH407DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 15.4A (Ta), 25A (Tc) 1.8V, 4.5V 9.5mOhm @ 15.3A, 4.5V 1V @ 250µA 93.8 nC @ 8 V ±8V 2760 pF @ 10 V - 3.6W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7326DN-T1-GE3

SI7326DN-T1-GE3

MOSFET N-CH 30V 6.5A PPAK 1212-8

Vishay Siliconix
2,545 -

RFQ

SI7326DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 19.5mOhm @ 10A, 10V 1.8V @ 250µA 13 nC @ 5 V ±25V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4174DY-T1-GE3

SI4174DY-T1-GE3

MOSFET N-CH 30V 17A 8SO

Vishay Siliconix
6,403 -

RFQ

SI4174DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Tc) 4.5V, 10V 9.5mOhm @ 10A, 10V 2.2V @ 250µA 27 nC @ 10 V ±20V 985 pF @ 15 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP22N65E-GE3

SIHP22N65E-GE3

MOSFET N-CH 650V 22A TO220AB

Vishay Siliconix
3,303 -

RFQ

SIHP22N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2415 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA21N65EF-E3

SIHA21N65EF-E3

MOSFET N-CH 650V 21A TO220

Vishay Siliconix
3,287 -

RFQ

SIHA21N65EF-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 106 nC @ 10 V ±30V 2322 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP12N50C-E3

SIHP12N50C-E3

MOSFET N-CH 500V 12A TO220AB

Vishay Siliconix
3,469 -

RFQ

SIHP12N50C-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 555mOhm @ 4A, 10V 5V @ 250µA 48 nC @ 10 V ±30V 1375 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIR800ADP-T1-RE3

SIR800ADP-T1-RE3

MOSFET N-CH 20V 50.2A/177A PPAK

Vishay Siliconix
8,950 -

RFQ

SIR800ADP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 20 V 50.2A (Ta), 177A (Tc) 2.5V, 10V 1.35mOhm @ 10A, 10V 1.5V @ 250µA 53 nC @ 10 V +12V, -8V 3415 pF @ 10 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA414DJ-T1-GE3

SIA414DJ-T1-GE3

MOSFET N-CH 8V 12A PPAK SC70-6

Vishay Siliconix
2,172 -

RFQ

SIA414DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 8 V 12A (Tc) 1.2V, 4.5V 11mOhm @ 9.7A, 4.5V 800mV @ 250µA 32 nC @ 5 V ±5V 1800 pF @ 4 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4156DY-T1-GE3

SI4156DY-T1-GE3

MOSFET N-CH 30V 24A 8SO

Vishay Siliconix
2,370 -

RFQ

SI4156DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 6mOhm @ 15.7A, 10V 2.2V @ 250µA 42 nC @ 10 V ±20V 1700 pF @ 15 V - 2.5W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL110TRPBF-BE3

IRFL110TRPBF-BE3

MOSFET N-CH 100V 1.5A SOT223

Vishay Siliconix
1,535 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 1.5A (Tc) 10V 540mOhm @ 900mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFRC20TR-GE3

SIHFRC20TR-GE3

MOSFET N-CHANNEL 600V

Vishay Siliconix
1,862 -

RFQ

SIHFRC20TR-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA25N60EFL-E3

SIHA25N60EFL-E3

MOSFET N-CHANNEL 600V 25A TO220

Vishay Siliconix
3,186 -

RFQ

SIHA25N60EFL-E3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 146mOhm @ 12.5A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 2274 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP125N60EF-GE3

SIHP125N60EF-GE3

MOSFET N-CH 600V 25A TO220AB

Vishay Siliconix
3,488 -

RFQ

SIHP125N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB22N65E-GE3

SIHB22N65E-GE3

MOSFET N-CH 650V 22A D2PAK

Vishay Siliconix
2,787 -

RFQ

SIHB22N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2415 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4491EDY-T1-GE3

SI4491EDY-T1-GE3

MOSFET P-CH 30V 17.3A 8SO

Vishay Siliconix
1,637 -

RFQ

SI4491EDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 17.3A (Ta) 4.5V, 10V 6.5mOhm @ 13A, 10V 2.8V @ 250µA 153 nC @ 10 V ±25V 4620 pF @ 15 V - 3.1W (Ta), 6.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP17N80E-GE3

SIHP17N80E-GE3

MOSFET N-CH 800V 15A TO220AB

Vishay Siliconix
3,212 -

RFQ

SIHP17N80E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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