Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHG33N60E-E3

SIHG33N60E-E3

MOSFET N-CH 600V 33A TO247AC

Vishay Siliconix
2,036 -

RFQ

SIHG33N60E-E3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 99mOhm @ 16.5A, 10V 4V @ 250µA 150 nC @ 10 V ±30V 3508 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG28N60EF-GE3

SIHG28N60EF-GE3

MOSFET N-CH 600V 28A TO247AC

Vishay Siliconix
2,612 -

RFQ

SIHG28N60EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 123mOhm @ 14A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2714 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH11N60EF-T1-GE3

SIHH11N60EF-T1-GE3

MOSFET N-CH 600V 11A PPAK 8 X 8

Vishay Siliconix
1,857 -

RFQ

SIHH11N60EF-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 357mOhm @ 5.5A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 1078 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQP120N06-3M5L_GE3

SQP120N06-3M5L_GE3

MOSFET N-CH 60V 120A TO220AB

Vishay Siliconix
146 -

RFQ

SQP120N06-3M5L_GE3

Ficha técnica

Tube Automotive, AEC-Q101, TrenchFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 4.5V, 10V 3.5mOhm @ 30A, 10V 2.5V @ 250µA 330 nC @ 10 V ±20V 14700 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI7880ADP-T1-E3

SI7880ADP-T1-E3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix
1,390 -

RFQ

SI7880ADP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 3mOhm @ 20A, 10V 3V @ 250µA 125 nC @ 10 V ±20V 5600 pF @ 15 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4864DY-T1-GE3

SI4864DY-T1-GE3

MOSFET N-CH 20V 17A 8SO

Vishay Siliconix
1,780 -

RFQ

SI4864DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 17A (Ta) 2.5V, 4.5V 3.5mOhm @ 25A, 4.5V 2V @ 250µA 70 nC @ 4.5 V ±8V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHG22N60EF-GE3

SIHG22N60EF-GE3

MOSFET N-CH 600V 19A TO247AC

Vishay Siliconix
474 -

RFQ

SIHG22N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 182mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1423 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40ASTRLPBF

IRFBC40ASTRLPBF

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
200 -

RFQ

IRFBC40ASTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHH26N60EF-T1-GE3

SIHH26N60EF-T1-GE3

MOSFET N-CH 600V 24A PPAK 8 X 8

Vishay Siliconix
3,689 -

RFQ

SIHH26N60EF-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 141mOhm @ 13A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2744 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHH100N60E-T1-GE3

SIHH100N60E-T1-GE3

MOSFET N-CH 600V 28A PPAK 8 X 8

Vishay Siliconix
2,283 -

RFQ

SIHH100N60E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 100mOhm @ 13.5A, 10V 5V @ 250µA 53 nC @ 10 V ±30V 1850 pF @ 100 V - 174W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB22N65E-T1-GE3

SIHB22N65E-T1-GE3

N-CHANNEL 650V

Vishay Siliconix
797 -

RFQ

SIHB22N65E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2415 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA100N60E-GE3

SIHA100N60E-GE3

MOSFET N-CH 600V 30A TO220

Vishay Siliconix
926 -

RFQ

SIHA100N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 100mOhm @ 13A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 1851 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG28N65EF-GE3

SIHG28N65EF-GE3

MOSFET N-CH 650V 28A TO247AC

Vishay Siliconix
2,812 -

RFQ

SIHG28N65EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 117mOhm @ 14A, 10V 4V @ 250µA 146 nC @ 10 V ±30V 3249 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP16N50C-BE3

SIHP16N50C-BE3

MOSFET N-CH 500V 16A TO220AB

Vishay Siliconix
997 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 68 nC @ 10 V ±30V 1900 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG33N60EF-GE3

SIHG33N60EF-GE3

MOSFET N-CH 600V 33A TO247AC

Vishay Siliconix
3,345 -

RFQ

SIHG33N60EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 98mOhm @ 16.5A, 10V 4V @ 250µA 155 nC @ 10 V ±30V 3454 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG33N65E-GE3

SIHG33N65E-GE3

MOSFET N-CH 650V 32.4A TO247AC

Vishay Siliconix
3,137 -

RFQ

SIHG33N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 32.4A (Tc) 10V 105mOhm @ 16.5A, 10V 4V @ 250µA 173 nC @ 10 V ±30V 4040 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB24N65EFT1-GE3

SIHB24N65EFT1-GE3

N-CHANNEL 650V

Vishay Siliconix
493 -

RFQ

SIHB24N65EFT1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 156mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2774 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB30N60ET1-GE3

SIHB30N60ET1-GE3

N-CHANNEL 600V

Vishay Siliconix
684 -

RFQ

SIHB30N60ET1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHW30N60E-GE3

SIHW30N60E-GE3

MOSFET N-CH 600V 29A TO247AD

Vishay Siliconix
159 -

RFQ

SIHW30N60E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB16N50C-E3

SIHB16N50C-E3

MOSFET N-CH 500V 16A D2PAK

Vishay Siliconix
990 -

RFQ

SIHB16N50C-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 68 nC @ 10 V ±30V 1900 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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