Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHP28N65E-GE3

SIHP28N65E-GE3

MOSFET N-CH 650V 29A TO220AB

Vishay Siliconix
2,740 -

RFQ

SIHP28N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Tc) 10V 112mOhm @ 14A, 10V 4V @ 250µA 140 nC @ 10 V ±30V 3405 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4166DY-T1-GE3

SI4166DY-T1-GE3

MOSFET N-CH 30V 30.5A 8SO

Vishay Siliconix
2,470 -

RFQ

SI4166DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 30.5A (Tc) 4.5V, 10V 3.9mOhm @ 15A, 10V 2.4V @ 250µA 65 nC @ 10 V ±20V 2730 pF @ 15 V - 3W (Ta), 6.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7421DN-T1-E3

SI7421DN-T1-E3

MOSFET P-CH 30V 6.4A PPAK1212-8

Vishay Siliconix
2,466 -

RFQ

SI7421DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 6.4A (Ta) 4.5V, 10V 25mOhm @ 9.8A, 10V 3V @ 250µA 40 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR214TRPBF

IRFR214TRPBF

MOSFET N-CH 250V 2.2A DPAK

Vishay Siliconix
1,833 -

RFQ

IRFR214TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Tc) 10V 2Ohm @ 1.3A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9214TRLPBF

IRFR9214TRLPBF

MOSFET P-CH 250V 2.7A DPAK

Vishay Siliconix
2,940 -

RFQ

IRFR9214TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 3Ohm @ 1.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 220 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR1N60ATRPBF-BE3

IRFR1N60ATRPBF-BE3

MOSFET N-CH 600V 1.4A DPAK

Vishay Siliconix
1,869 -

RFQ

IRFR1N60ATRPBF-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) - 7Ohm @ 840mA, 10V 4V @ 250µA 14 nC @ 10 V ±30V 229 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR024TRPBF-BE3

IRFR024TRPBF-BE3

MOSFET N-CH 60V 14A DPAK

Vishay Siliconix
1,925 -

RFQ

IRFR024TRPBF-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) - 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG22N50D-GE3

SIHG22N50D-GE3

MOSFET N-CH 500V 22A TO247AC

Vishay Siliconix
2,182 -

RFQ

SIHG22N50D-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 230mOhm @ 11A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 1938 pF @ 100 V - 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP105N60EF-GE3

SIHP105N60EF-GE3

MOSFET N-CH 600V 29A TO220AB

Vishay Siliconix
2,126 -

RFQ

SIHP105N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 102mOhm @ 13A, 10V 5V @ 250µA 53 nC @ 10 V ±30V 1804 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR1N60ATRPBF

IRFR1N60ATRPBF

MOSFET N-CH 600V 1.4A DPAK

Vishay Siliconix
1,014 -

RFQ

IRFR1N60ATRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) 10V 7Ohm @ 840mA, 10V 4V @ 250µA 14 nC @ 10 V ±30V 229 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR622DP-T1-RE3

SIR622DP-T1-RE3

MOSFET N-CH 150V 12.6A PPAK

Vishay Siliconix
14,866 -

RFQ

SIR622DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 150 V 12.6A (Ta), 51.6A (Tc) 7.5V, 10V 17.7mOhm @ 20A, 10V 4.5V @ 250µA 41 nC @ 10 V ±20V 1516 pF @ 75 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4686DY-T1-GE3

SI4686DY-T1-GE3

MOSFET N-CH 30V 18.2A 8SO

Vishay Siliconix
2,378 -

RFQ

SI4686DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET®, WFET® Active N-Channel MOSFET (Metal Oxide) 30 V 18.2A (Tc) 4.5V, 10V 9.5mOhm @ 13.8A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1220 pF @ 15 V - 3W (Ta), 5.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA80DP-T1-RE3

SIRA80DP-T1-RE3

MOSFET N-CH 30V 100A PPAK SO-8

Vishay Siliconix
3,000 -

RFQ

SIRA80DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 0.62mOhm @ 20A, 10V 2.2V @ 250µA 188 nC @ 10 V +20V, -16V 9530 pF @ 15 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQD100N02-3M5L_GE3

SQD100N02-3M5L_GE3

MOSFET N-CH 20V 100A TO252AA

Vishay Siliconix
1,691 -

RFQ

SQD100N02-3M5L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 4.5V, 10V 3.5mOhm @ 30A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 5500 pF @ 10 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR800DP-T1-GE3

SIR800DP-T1-GE3

MOSFET N-CH 20V 50A PPAK SO-8

Vishay Siliconix
1,751 -

RFQ

SIR800DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 2.5V, 10V 2.3mOhm @ 15A, 10V 1.5V @ 250µA 133 nC @ 10 V ±12V 5125 pF @ 10 V - 5.2W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR420TRLPBF

IRFR420TRLPBF

MOSFET N-CH 500V 2.4A DPAK

Vishay Siliconix
2,995 -

RFQ

IRFR420TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP35N60E-GE3

SIHP35N60E-GE3

MOSFET N-CH 600V 32A TO220AB

Vishay Siliconix
2,082 -

RFQ

SIHP35N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 94mOhm @ 17A, 10V 4V @ 250µA 132 nC @ 10 V ±30V 2760 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7120ADN-T1-GE3

SI7120ADN-T1-GE3

MOSFET N-CH 60V 6A PPAK1212-8

Vishay Siliconix
2,501 -

RFQ

SI7120ADN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta) 4.5V, 10V 21mOhm @ 9.5A, 10V 3V @ 250µA 45 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIRC04DP-T1-GE3

SIRC04DP-T1-GE3

MOSFET N-CH 30V 60A PPAK SO-8

Vishay Siliconix
1,028 -

RFQ

SIRC04DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 2.45mOhm @ 15A, 10V 2.1V @ 250µA 56 nC @ 10 V +20V, -16V 2850 pF @ 15 V Schottky Diode (Body) 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR020TRPBF

IRFR020TRPBF

MOSFET N-CH 60V 14A DPAK

Vishay Siliconix
1,352 -

RFQ

IRFR020TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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