Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI7145DP-T1-GE3

SI7145DP-T1-GE3

MOSFET P-CH 30V 60A PPAK SO-8

Vishay Siliconix
2,735 -

RFQ

SI7145DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 2.6mOhm @ 25A, 10V 2.3V @ 250µA 413 nC @ 10 V ±20V 15660 pF @ 15 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE820DF-T1-GE3

SIE820DF-T1-GE3

MOSFET N-CH 20V 50A 10POLARPAK

Vishay Siliconix
730 -

RFQ

SIE820DF-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 2.5V, 4.5V 3.5mOhm @ 18A, 4.5V 2V @ 250µA 143 nC @ 10 V ±12V 4300 pF @ 10 V - 5.2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHH21N65E-T1-GE3

SIHH21N65E-T1-GE3

MOSFET N-CH 650V 20.3A PPAK 8X8

Vishay Siliconix
2,223 -

RFQ

SIHH21N65E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 20.3A (Tc) 10V 170mOhm @ 11A, 10V 4V @ 250µA 99 nC @ 10 V ±30V 2404 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4842BDY-T1-GE3

SI4842BDY-T1-GE3

MOSFET N-CH 30V 28A 8SO

Vishay Siliconix
1,694 -

RFQ

SI4842BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Tc) 4.5V, 10V 4.2mOhm @ 20A, 10V 3V @ 250µA 100 nC @ 10 V ±20V 3650 pF @ 15 V - 3W (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4421DY-T1-GE3

SI4421DY-T1-GE3

MOSFET P-CH 20V 10A 8SO

Vishay Siliconix
1,119 -

RFQ

SI4421DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 1.8V, 4.5V 8.75mOhm @ 14A, 4.5V 800mV @ 850µA 125 nC @ 4.5 V ±8V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHG24N65E-E3

SIHG24N65E-E3

MOSFET N-CH 650V 24A TO247AC

Vishay Siliconix
3,446 -

RFQ

SIHG24N65E-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2740 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG24N65E-GE3

SIHG24N65E-GE3

MOSFET N-CH 650V 24A TO247AC

Vishay Siliconix
3,724 -

RFQ

SIHG24N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2740 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB33N60ET5-GE3

SIHB33N60ET5-GE3

MOSFET N-CH 600V 33A TO263

Vishay Siliconix
2,282 -

RFQ

SIHB33N60ET5-GE3

Ficha técnica

Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 99mOhm @ 16.5A, 10V 4V @ 250µA 150 nC @ 10 V ±30V 3508 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM70060EL_GE3

SQM70060EL_GE3

MOSFET N-CH 100V 75A D2PAK

Vishay Siliconix
1,031 -

RFQ

SQM70060EL_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 4.5V, 10V 5.9mOhm @ 30A, 10V 2.5V @ 250µA 100 nC @ 10 V ±20V 5500 pF @ 25 V - 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4408DY-T1-E3

SI4408DY-T1-E3

MOSFET N-CH 20V 14A 8SO

Vishay Siliconix
2,522 -

RFQ

SI4408DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 14A (Ta) 4.5V, 10V 4.5mOhm @ 21A, 10V 1V @ 250µA (Min) 32 nC @ 4.5 V ±20V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4456DY-T1-E3

SI4456DY-T1-E3

MOSFET N-CH 40V 33A 8SO

Vishay Siliconix
1,473 -

RFQ

SI4456DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 33A (Tc) 4.5V, 10V 3.8mOhm @ 20A, 10V 2.8V @ 250µA 122 nC @ 10 V ±20V 5670 pF @ 20 V - 3.5W (Ta), 7.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9Z34STRRPBF

IRF9Z34STRRPBF

MOSFET P-CH 60V 18A D2PAK

Vishay Siliconix
458 -

RFQ

IRF9Z34STRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 10V 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9630STRLPBF

IRF9630STRLPBF

MOSFET P-CH 200V 6.5A D2PAK

Vishay Siliconix
1,163 -

RFQ

IRF9630STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 200 V 6.5A (Tc) 10V 800mOhm @ 3.9A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE822DF-T1-GE3

SIE822DF-T1-GE3

MOSFET N-CH 20V 50A 10POLARPAK

Vishay Siliconix
1,678 -

RFQ

SIE822DF-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 3.4mOhm @ 18.3A, 10V 3V @ 250µA 78 nC @ 10 V ±20V 4200 pF @ 10 V - 5.2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS11N50ATRLP

IRFS11N50ATRLP

MOSFET N-CH 500V 11A TO263AB

Vishay Siliconix
340 -

RFQ

IRFS11N50ATRLP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC30ASTRLPBF

IRFBC30ASTRLPBF

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix
789 -

RFQ

IRFBC30ASTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7434DP-T1-GE3

SI7434DP-T1-GE3

MOSFET N-CH 250V 2.3A PPAK SO-8

Vishay Siliconix
1,791 -

RFQ

SI7434DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 250 V 2.3A (Ta) 6V, 10V 155mOhm @ 3.8A, 10V 4V @ 250µA 50 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIE812DF-T1-GE3

SIE812DF-T1-GE3

MOSFET N-CH 40V 60A 10POLARPAK

Vishay Siliconix
325 -

RFQ

SIE812DF-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 2.6mOhm @ 25A, 10V 3V @ 250µA 170 nC @ 10 V ±20V 8300 pF @ 20 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM85N15-19_GE3

SQM85N15-19_GE3

MOSFET N-CH 150V 85A TO263

Vishay Siliconix
3,980 -

RFQ

SQM85N15-19_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 85A (Tc) 10V 19mOhm @ 30A, 10V 3.5V @ 250µA 120 nC @ 10 V ±20V 6285 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFPC50LCPBF

IRFPC50LCPBF

MOSFET N-CH 600V 11A TO247-3

Vishay Siliconix
2,544 -

RFQ

IRFPC50LCPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 600mOhm @ 6.6A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2300 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 4747 Record«Prev1... 208209210211212213214215...238Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario