Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI1467DH-T1-E3

SI1467DH-T1-E3

MOSFET P-CH 20V 2.7A SC70-6

Vishay Siliconix
1,245 -

RFQ

SI1467DH-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 2.7A (Tc) 1.8V, 4.5V 90mOhm @ 2A, 4.5V 1V @ 250µA 13.5 nC @ 4.5 V ±8V 561 pF @ 10 V - 1.5W (Ta), 2.78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4864DY-T1-E3

SI4864DY-T1-E3

MOSFET N-CH 20V 17A 8SO

Vishay Siliconix
3,671 -

RFQ

SI4864DY-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 17A (Ta) 2.5V, 4.5V 3.5mOhm @ 25A, 4.5V 2V @ 250µA 70 nC @ 4.5 V ±8V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQP120N10-3M8_GE3

SQP120N10-3M8_GE3

MOSFET N-CH 100V 120A TO220AB

Vishay Siliconix
2,035 -

RFQ

SQP120N10-3M8_GE3

Ficha técnica

Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.8mOhm @ 20A, 10V 3.5V @ 250µA 190 nC @ 10 V ±20V 7230 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHFR120-GE3

SIHFR120-GE3

MOSFET N-CHANNEL 100V

Vishay Siliconix
3,161 -

RFQ

SIHFR120-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 10V 270mOhm @ 4.6A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHH21N60E-T1-GE3

SIHH21N60E-T1-GE3

MOSFET N-CH 600V 20A PPAK 8 X 8

Vishay Siliconix
2,631 -

RFQ

SIHH21N60E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 176mOhm @ 11A, 10V 4V @ 250µA 83 nC @ 10 V ±30V 2015 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3477DV-T1-GE3

SI3477DV-T1-GE3

MOSFET P-CH 12V 8A 6TSOP

Vishay Siliconix
1,855 -

RFQ

SI3477DV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 8A (Tc) 1.8V, 4.5V 17.5mOhm @ 9A, 4.5V 1V @ 250µA 90 nC @ 10 V ±10V 2600 pF @ 6 V - 2W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA12BDP-T1-GE3

SIRA12BDP-T1-GE3

MOSFET N-CH 30V 27A/60A PPAK SO8

Vishay Siliconix
979 -

RFQ

SIRA12BDP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 60A (Tc) 4.5V, 10V 4.3mOhm @ 10A, 10V 2.4V @ 250µA 32 nC @ 10 V +20V, -16V 1470 pF @ 15 V - 5W (Ta), 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG17N60D-E3

SIHG17N60D-E3

MOSFET N-CH 600V 17A TO247AC

Vishay Siliconix
3,560 -

RFQ

SIHG17N60D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 340mOhm @ 8A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 1780 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG17N60D-GE3

SIHG17N60D-GE3

MOSFET N-CH 600V 17A TO247AC

Vishay Siliconix
3,957 -

RFQ

SIHG17N60D-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 340mOhm @ 8A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 1780 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH11N65E-T1-GE3

SIHH11N65E-T1-GE3

MOSFET N-CH 650V 12A PPAK 8 X 8

Vishay Siliconix
2,939 -

RFQ

SIHH11N65E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 363mOhm @ 6A, 10V 4V @ 250µA 68 nC @ 10 V ±30V 1257 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG460B-GE3

SIHG460B-GE3

MOSFET N-CH 500V 20A TO247AC

Vishay Siliconix
2,650 -

RFQ

SIHG460B-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 250mOhm @ 10A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 3094 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH11N65EF-T1-GE3

SIHH11N65EF-T1-GE3

MOSFET N-CH 650V 11A PPAK 8 X 8

Vishay Siliconix
3,408 -

RFQ

SIHH11N65EF-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 382mOhm @ 6A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 1243 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40LPBF

IRFBC40LPBF

MOSFET N-CH 600V 6.2A TO262-3

Vishay Siliconix
3,306 -

RFQ

IRFBC40LPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB22N60EL-GE3

SIHB22N60EL-GE3

MOSFET N-CH 600V 21A TO263

Vishay Siliconix
3,611 -

RFQ

SIHB22N60EL-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 197mOhm @ 11A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 1690 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFR9310TRR-GE3

SIHFR9310TRR-GE3

MOSFET P-CHANNEL 400V

Vishay Siliconix
2,985 -

RFQ

SIHFR9310TRR-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 270 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS406DN-T1-GE3

SIS406DN-T1-GE3

MOSFET N-CH 30V 9A PPAK1212-8

Vishay Siliconix
1,979 -

RFQ

SIS406DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 11mOhm @ 12A, 10V 3V @ 250µA 28 nC @ 10 V ±25V 1100 pF @ 15 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHFR9310TRL-GE3

SIHFR9310TRL-GE3

MOSFET P-CHANNEL 400V

Vishay Siliconix
1,851 -

RFQ

SIHFR9310TRL-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 270 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7868ADP-T1-GE3

SI7868ADP-T1-GE3

MOSFET N-CH 20V 40A PPAK SO-8

Vishay Siliconix
2,832 -

RFQ

SI7868ADP-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 40A (Tc) 4.5V, 10V 2.25mOhm @ 20A, 10V 1.6V @ 250µA 150 nC @ 10 V ±16V 6110 pF @ 10 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFIBC40GLCPBF

IRFIBC40GLCPBF

MOSFET N-CH 600V 3.5A TO220-3

Vishay Siliconix
2,108 -

RFQ

IRFIBC40GLCPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Tc) 10V 1.2Ohm @ 2.1A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG11N80E-GE3

SIHG11N80E-GE3

MOSFET N-CH 800V 12A TO247AC

Vishay Siliconix
3,081 -

RFQ

SIHG11N80E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 440mOhm @ 5.5A, 10V 4V @ 250µA 88 nC @ 10 V ±30V 1670 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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