Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQS420EN-T1_GE3

SQS420EN-T1_GE3

MOSFET N-CH 20V 8A PPAK1212-8

Vishay Siliconix
3,093 -

RFQ

SQS420EN-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 1.8V, 4.5V 28mOhm @ 5A, 4.5V 1.5V @ 250µA 14 nC @ 4.5 V ±8V 490 pF @ 10 V - 18W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHF22N65E-GE3

SIHF22N65E-GE3

MOSFET N-CH 650V 22A TO220

Vishay Siliconix
3,682 -

RFQ

SIHF22N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2415 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40ASTRRPBF

IRFBC40ASTRRPBF

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
3,554 -

RFQ

IRFBC40ASTRRPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR014TRPBF-BE3

IRFR014TRPBF-BE3

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix
1,845 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) 10V 200mOhm @ 4.6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA421DJ-T1-GE3

SIA421DJ-T1-GE3

MOSFET P-CH 30V 12A PPAK SC70-6

Vishay Siliconix
404 -

RFQ

SIA421DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 35mOhm @ 5.3A, 10V 3V @ 250µA 29 nC @ 10 V ±20V 950 pF @ 15 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR110TRPBF

IRFR110TRPBF

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix
989 -

RFQ

IRFR110TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 2.6A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9014TRPBF-BE3

IRFR9014TRPBF-BE3

MOSFET P-CH 60V 5.1A DPAK

Vishay Siliconix
1,985 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ4005EY-T1_GE3

SQ4005EY-T1_GE3

MOSFET P-CHANNEL 12V 15A 8SOIC

Vishay Siliconix
2,484 -

RFQ

SQ4005EY-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 15A (Tc) 2.5V, 4.5V 22mOhm@ 13.5A, 4.5V 1V @ 250µA 38 nC @ 4.5 V ±8V 3600 pF @ 6 V - 6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ4431EY-T1_BE3

SQ4431EY-T1_BE3

MOSFET P-CH 30V 10.8A 8SOIC

Vishay Siliconix
2,485 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 10.8A (Tc) 4.5V, 10V 30mOhm @ 6A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1265 pF @ 15 V - 6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4386DY-T1-GE3

SI4386DY-T1-GE3

MOSFET N-CH 30V 11A 8SO

Vishay Siliconix
1,778 -

RFQ

SI4386DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 7mOhm @ 16A, 10V 2.5V @ 250µA 18 nC @ 4.5 V ±20V - - 1.47W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR420TRPBF

IRFR420TRPBF

MOSFET N-CH 500V 2.4A DPAK

Vishay Siliconix
1,263 -

RFQ

IRFR420TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR024TRPBF

IRFR024TRPBF

MOSFET N-CH 60V 14A DPAK

Vishay Siliconix
3,200 -

RFQ

IRFR024TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4100DY-T1-GE3

SI4100DY-T1-GE3

MOSFET N-CH 100V 6.8A 8SO

Vishay Siliconix
2,190 -

RFQ

SI4100DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 6V, 10V 63mOhm @ 4.4A, 10V 4.5V @ 250µA 20 nC @ 10 V ±20V 600 pF @ 50 V - 2.5W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHH186N60EF-T1GE3

SIHH186N60EF-T1GE3

MOSFET N-CH 600V 16A PPAK 8 X 8

Vishay Siliconix
2,778 -

RFQ

SIHH186N60EF-T1GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) EF Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 193mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1081 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG22N60EL-GE3

SIHG22N60EL-GE3

MOSFET N-CH 600V 21A TO247AC

Vishay Siliconix
2,142 -

RFQ

SIHG22N60EL-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 197mOhm @ 11A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 1690 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB17N80E-GE3

SIHB17N80E-GE3

MOSFET N-CH 800V 15A D2PAK

Vishay Siliconix
3,069 -

RFQ

SIHB17N80E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5476DU-T1-GE3

SI5476DU-T1-GE3

MOSFET N-CH 60V 12A CHIPFET

Vishay Siliconix
1,274 -

RFQ

SI5476DU-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 4.5V, 10V 34mOhm @ 4.6A, 10V 3V @ 250µA 32 nC @ 10 V ±20V 1100 pF @ 30 V - 3.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI9407BDY-T1-E3

SI9407BDY-T1-E3

MOSFET P-CH 60V 4.7A 8SO

Vishay Siliconix
3,995 -

RFQ

SI9407BDY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 4.7A (Tc) 4.5V, 10V 120mOhm @ 3.2A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 600 pF @ 30 V - 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB12N50C-E3

SIHB12N50C-E3

MOSFET N-CH 500V 12A D2PAK

Vishay Siliconix
2,722 -

RFQ

SIHB12N50C-E3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 555mOhm @ 4A, 10V 5V @ 250µA 48 nC @ 10 V ±30V 1375 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHH14N65E-T1-GE3

SIHH14N65E-T1-GE3

MOSFET N-CH 650V 15A PPAK 8 X 8

Vishay Siliconix
2,805 -

RFQ

SIHH14N65E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 260mOhm @ 7A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1712 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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