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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
CRS11(TE85L,Q,M) DIODE SCHOTTKY 30V 1A SFLAT Toshiba Semiconductor and Storage	2,936	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	1.5 mA @ 30 V	30 V	1A	-40°C ~ 125°C	360 mV @ 1 A
CMS10(TE12L,Q,M) DIODE SCHOTTKY 40V 1A MFLAT Toshiba Semiconductor and Storage	2,012	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	50pF @ 10V, 1MHz	-	500 µA @ 40 V	40 V	1A	-40°C ~ 150°C	550 mV @ 1 A
1SS193S,LF(D DIODE GEN PURP 80V 100MA SMINI Toshiba Semiconductor and Storage	2,412	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Obsolete	Surface Mount	3pF @ 0V, 1MHz	4 ns	500 nA @ 80 V	80 V	100mA	125°C (Max)	1.2 V @ 100 mA
TRS10E65C,S1Q DIODE SCHOTTKY 650V 10A TO220-2L Toshiba Semiconductor and Storage	2,657	-	RFQ	Ficha técnica	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Through Hole	-	0 ns	90 µA @ 650 V	650 V	10A (DC)	175°C (Max)	1.7 V @ 10 A
1SS417,L3M DIODE SCHOTTKY 40V 100MA FSC Toshiba Semiconductor and Storage	2,828	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	15pF @ 0V, 1MHz	-	5 µA @ 40 V	40 V	100mA	125°C (Max)	620 mV @ 50 mA
1SS424(TPL3,F) DIODE SCHOTTKY 20V 200MA SSM Toshiba Semiconductor and Storage	3,610	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	20pF @ 0V, 1MHz	-	50 µA @ 20 V	20 V	200mA	125°C (Max)	500 mV @ 200 mA
1SS387,L3F DIODE GEN PURP 80V 100MA ESC Toshiba Semiconductor and Storage	3,644	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	3pF @ 0V, 1MHz	4 ns	500 nA @ 80 V	80 V	100mA	125°C (Max)	1.2 V @ 100 mA
1SS416,L3M DIODE SCHOTTKY 30V 100MA SOD923 Toshiba Semiconductor and Storage	10,000	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	15pF @ 0V, 1MHz	-	50 µA @ 30 V	30 V	100mA	125°C (Max)	500 mV @ 100 mA
1SS413,L3M DIODE SCHOTTKY 20V 50MA FSC Toshiba Semiconductor and Storage	2,038	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	3.9pF @ 0V, 1MHz	-	500 nA @ 20 V	20 V	50mA	125°C (Max)	550 mV @ 50 mA
CLH01(TE16L,Q) DIODE GEN PURP 200V 3A L-FLAT Toshiba Semiconductor and Storage	3,272	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	35 ns	10 µA @ 200 V	200 V	3A (DC)	-40°C ~ 150°C	980 mV @ 3 A
CLH01(TE16R,Q) DIODE GEN PURP 200V 3A L-FLAT Toshiba Semiconductor and Storage	3,080	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	35 ns	10 µA @ 200 V	200 V	3A (DC)	-40°C ~ 150°C	980 mV @ 3 A
CLH02(TE16L,Q) DIODE GEN PURP 300V 3A L-FLAT Toshiba Semiconductor and Storage	3,939	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	35 ns	10 µA @ 300 V	300 V	3A (DC)	-40°C ~ 150°C	1.3 V @ 3 A
1SS427,L3M DIODE GEN PURP 80V 100MA SOD923 Toshiba Semiconductor and Storage	30,000	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	0.3pF @ 0V, 1MHz	1.6 ns	500 nA @ 80 V	80 V	100mA	-55°C ~ 150°C	1.2 V @ 100 mA
1SS401(TE85L,F) DIODE SCHOTTKY 20V 300MA SC70 Toshiba Semiconductor and Storage	2,184	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	46pF @ 0V, 1MHz	-	50 µA @ 20 V	20 V	300mA	125°C (Max)	450 mV @ 300 mA
CLH02(TE16R,Q) DIODE GEN PURP 300V 3A L-FLAT Toshiba Semiconductor and Storage	3,090	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	35 ns	10 µA @ 300 V	300 V	3A (DC)	-40°C ~ 150°C	1.3 V @ 3 A
CLH03(TE16L,Q) DIODE GEN PURP 400V 3A L-FLAT Toshiba Semiconductor and Storage	2,585	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	35 ns	-	400 V	3A (DC)	-	-
CLH03(TE16R,Q) DIODE GEN PURP 400V 3A L-FLAT Toshiba Semiconductor and Storage	2,420	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	35 ns	-	400 V	3A (DC)	-	-
CLH05(T6L,NKOD,Q) DIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage	2,036	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	35 ns	10 µA @ 200 V	200 V	5A (DC)	-40°C ~ 150°C	980 mV @ 5 A
CLH05(TE16R,Q) DIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage	2,573	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	35 ns	10 µA @ 200 V	200 V	5A (DC)	-40°C ~ 150°C	0.98 V @ 5 A
CLH05,LMBJQ(O DIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage	2,902	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	35 ns	10 µA @ 200 V	200 V	5A (DC)	-40°C ~ 150°C	980 mV @ 5 A