Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
CRS11(TE85L,Q,M)

CRS11(TE85L,Q,M)

DIODE SCHOTTKY 30V 1A SFLAT

Toshiba Semiconductor and Storage
2,936 -

RFQ

CRS11(TE85L,Q,M)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 1.5 mA @ 30 V 30 V 1A -40°C ~ 125°C 360 mV @ 1 A
CMS10(TE12L,Q,M)

CMS10(TE12L,Q,M)

DIODE SCHOTTKY 40V 1A MFLAT

Toshiba Semiconductor and Storage
2,012 -

RFQ

CMS10(TE12L,Q,M)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 50pF @ 10V, 1MHz - 500 µA @ 40 V 40 V 1A -40°C ~ 150°C 550 mV @ 1 A
1SS193S,LF(D

1SS193S,LF(D

DIODE GEN PURP 80V 100MA SMINI

Toshiba Semiconductor and Storage
2,412 -

RFQ

1SS193S,LF(D

Ficha técnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Obsolete Surface Mount 3pF @ 0V, 1MHz 4 ns 500 nA @ 80 V 80 V 100mA 125°C (Max) 1.2 V @ 100 mA
TRS10E65C,S1Q

TRS10E65C,S1Q

DIODE SCHOTTKY 650V 10A TO220-2L

Toshiba Semiconductor and Storage
2,657 -

RFQ

TRS10E65C,S1Q

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole - 0 ns 90 µA @ 650 V 650 V 10A (DC) 175°C (Max) 1.7 V @ 10 A
1SS417,L3M

1SS417,L3M

DIODE SCHOTTKY 40V 100MA FSC

Toshiba Semiconductor and Storage
2,828 -

RFQ

1SS417,L3M

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 15pF @ 0V, 1MHz - 5 µA @ 40 V 40 V 100mA 125°C (Max) 620 mV @ 50 mA
1SS424(TPL3,F)

1SS424(TPL3,F)

DIODE SCHOTTKY 20V 200MA SSM

Toshiba Semiconductor and Storage
3,610 -

RFQ

1SS424(TPL3,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 20pF @ 0V, 1MHz - 50 µA @ 20 V 20 V 200mA 125°C (Max) 500 mV @ 200 mA
1SS387,L3F

1SS387,L3F

DIODE GEN PURP 80V 100MA ESC

Toshiba Semiconductor and Storage
3,644 -

RFQ

1SS387,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 3pF @ 0V, 1MHz 4 ns 500 nA @ 80 V 80 V 100mA 125°C (Max) 1.2 V @ 100 mA
1SS416,L3M

1SS416,L3M

DIODE SCHOTTKY 30V 100MA SOD923

Toshiba Semiconductor and Storage
10,000 -

RFQ

1SS416,L3M

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 15pF @ 0V, 1MHz - 50 µA @ 30 V 30 V 100mA 125°C (Max) 500 mV @ 100 mA
1SS413,L3M

1SS413,L3M

DIODE SCHOTTKY 20V 50MA FSC

Toshiba Semiconductor and Storage
2,038 -

RFQ

1SS413,L3M

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 3.9pF @ 0V, 1MHz - 500 nA @ 20 V 20 V 50mA 125°C (Max) 550 mV @ 50 mA
CLH01(TE16L,Q)

CLH01(TE16L,Q)

DIODE GEN PURP 200V 3A L-FLAT

Toshiba Semiconductor and Storage
3,272 -

RFQ

CLH01(TE16L,Q)

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 35 ns 10 µA @ 200 V 200 V 3A (DC) -40°C ~ 150°C 980 mV @ 3 A
CLH01(TE16R,Q)

CLH01(TE16R,Q)

DIODE GEN PURP 200V 3A L-FLAT

Toshiba Semiconductor and Storage
3,080 -

RFQ

CLH01(TE16R,Q)

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 35 ns 10 µA @ 200 V 200 V 3A (DC) -40°C ~ 150°C 980 mV @ 3 A
CLH02(TE16L,Q)

CLH02(TE16L,Q)

DIODE GEN PURP 300V 3A L-FLAT

Toshiba Semiconductor and Storage
3,939 -

RFQ

CLH02(TE16L,Q)

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 35 ns 10 µA @ 300 V 300 V 3A (DC) -40°C ~ 150°C 1.3 V @ 3 A
1SS427,L3M

1SS427,L3M

DIODE GEN PURP 80V 100MA SOD923

Toshiba Semiconductor and Storage
30,000 -

RFQ

1SS427,L3M

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 0.3pF @ 0V, 1MHz 1.6 ns 500 nA @ 80 V 80 V 100mA -55°C ~ 150°C 1.2 V @ 100 mA
1SS401(TE85L,F)

1SS401(TE85L,F)

DIODE SCHOTTKY 20V 300MA SC70

Toshiba Semiconductor and Storage
2,184 -

RFQ

1SS401(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 46pF @ 0V, 1MHz - 50 µA @ 20 V 20 V 300mA 125°C (Max) 450 mV @ 300 mA
CLH02(TE16R,Q)

CLH02(TE16R,Q)

DIODE GEN PURP 300V 3A L-FLAT

Toshiba Semiconductor and Storage
3,090 -

RFQ

CLH02(TE16R,Q)

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 35 ns 10 µA @ 300 V 300 V 3A (DC) -40°C ~ 150°C 1.3 V @ 3 A
CLH03(TE16L,Q)

CLH03(TE16L,Q)

DIODE GEN PURP 400V 3A L-FLAT

Toshiba Semiconductor and Storage
2,585 -

RFQ

CLH03(TE16L,Q)

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 35 ns - 400 V 3A (DC) - -
CLH03(TE16R,Q)

CLH03(TE16R,Q)

DIODE GEN PURP 400V 3A L-FLAT

Toshiba Semiconductor and Storage
2,420 -

RFQ

CLH03(TE16R,Q)

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 35 ns - 400 V 3A (DC) - -
CLH05(T6L,NKOD,Q)

CLH05(T6L,NKOD,Q)

DIODE GEN PURP 200V 5A L-FLAT

Toshiba Semiconductor and Storage
2,036 -

RFQ

CLH05(T6L,NKOD,Q)

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 35 ns 10 µA @ 200 V 200 V 5A (DC) -40°C ~ 150°C 980 mV @ 5 A
CLH05(TE16R,Q)

CLH05(TE16R,Q)

DIODE GEN PURP 200V 5A L-FLAT

Toshiba Semiconductor and Storage
2,573 -

RFQ

CLH05(TE16R,Q)

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 35 ns 10 µA @ 200 V 200 V 5A (DC) -40°C ~ 150°C 0.98 V @ 5 A
CLH05,LMBJQ(O

CLH05,LMBJQ(O

DIODE GEN PURP 200V 5A L-FLAT

Toshiba Semiconductor and Storage
2,902 -

RFQ

CLH05,LMBJQ(O

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 35 ns 10 µA @ 200 V 200 V 5A (DC) -40°C ~ 150°C 980 mV @ 5 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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