Más categorías de productos

Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
CUHS15S40,H3F SBD SINGLE 40V, 1.5A, IN 2 PIN U Toshiba Semiconductor and Storage	5,990	-	RFQ		Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	170pF @ 0V, 1MHz	-	200 µA @ 40 V	40 V	1.5A	150°C	510 mV @ 1.5 A
CRG01(TE85L,Q,M) DIODE GEN PURP 100V 700MA SFLAT Toshiba Semiconductor and Storage	3,055	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	10 µA @ 100 V	100 V	700mA	-40°C ~ 150°C	1.1 V @ 700 mA
CRG02(TE85L,Q,M) DIODE GEN PURP 400V 700MA SFLAT Toshiba Semiconductor and Storage	3,836	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	10 µA @ 400 V	400 V	700mA	-40°C ~ 150°C	1.1 V @ 700 mA
CRG03(TE85L,Q,M) DIODE GEN PURP 400V 1A SFLAT Toshiba Semiconductor and Storage	3,395	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	-	10 µA @ 400 V	400 V	1A	-40°C ~ 150°C	1 V @ 1 A
CUS01(TE85L,Q,M) DIODE SCHOTTKY 30V 1A USFLAT Toshiba Semiconductor and Storage	3,969	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	1.5 mA @ 30 V	30 V	1A	-40°C ~ 125°C	390 mV @ 1 A
CUS02(TE85L,Q,M) DIODE SCHOTTKY 30V 1A USFLAT Toshiba Semiconductor and Storage	2,859	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	100 µA @ 30 V	30 V	1A	-40°C ~ 150°C	470 mV @ 1 A
CCS15F40,L3F DIODE SCHOTTKY 40V 1.5A CST2C Toshiba Semiconductor and Storage	21,510	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	130pF @ 0V, 1MHz	-	25 µA @ 40 V	40 V	1.5A	150°C (Max)	640 mV @ 1.5 A
1SS422(TE85L,F) SMALL-SIGNAL SCHOTTKY BARRIER DI Toshiba Semiconductor and Storage	22,648	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	15pF @ 0V, 1MHz	-	50 µA @ 30 V	30 V	100mA	125°C (Max)	500 mV @ 100 mA
1SS190TE85LF DIODE GEN PURP 80V 100MA SC59-3 Toshiba Semiconductor and Storage	18,000	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	4pF @ 0V, 1MHz	4 ns	500 nA @ 80 V	80 V	100mA	125°C (Max)	1.2 V @ 100 mA
1SS372(TE85L,F) SMALL-SIGNAL SCHOTTKY BARRIER DI Toshiba Semiconductor and Storage	5,167	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	20pF @ 0V, 1MHz	-	20 µA @ 10 V	10 V	100mA	125°C (Max)	500 mV @ 100 mA
CMS01(TE12L) DIODE SCHOTTKY 30V 3A MFLAT Toshiba Semiconductor and Storage	2,577	-	RFQ	Ficha técnica	Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	5 mA @ 30 V	30 V	3A	-40°C ~ 125°C	370 mV @ 3 A
CMS02(TE12L) DIODE SCHOTTKY 30V 3A MFLAT Toshiba Semiconductor and Storage	3,613	-	RFQ	Ficha técnica	Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	500 µA @ 30 V	30 V	3A	-40°C ~ 125°C	400 mV @ 3 A
CMS03(TE12L) DIODE SCHOTTKY 30V 3A MFLAT Toshiba Semiconductor and Storage	3,460	-	RFQ	Ficha técnica	Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	500 µA @ 30 V	30 V	3A	-40°C ~ 150°C	450 mV @ 3 A
CMS04(TE12L) DIODE SCHOTTKY 30V 5A MFLAT Toshiba Semiconductor and Storage	3,214	-	RFQ	Ficha técnica	Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	8 mA @ 30 V	30 V	5A	-40°C ~ 125°C	370 mV @ 5 A
CMS09(TE12L) DIODE SCHOTTKY 30V 1A MFLAT Toshiba Semiconductor and Storage	3,931	-	RFQ	Ficha técnica	Digi-Reel®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	500 µA @ 30 V	30 V	1A	-40°C ~ 150°C	450 mV @ 1 A
CMS11(TE12L) DIODE SCHOTTKY 40V 2A MFLAT Toshiba Semiconductor and Storage	3,753	-	RFQ	Ficha técnica	Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	500 µA @ 40 V	40 V	2A	-40°C ~ 150°C	550 mV @ 2 A
CRH01(TE85L) DIODE SWITCHING 200V 1A SFLAT Toshiba Semiconductor and Storage	3,937	-	RFQ	Ficha técnica	Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	35 ns	10 µA @ 200 V	200 V	1A	-40°C ~ 150°C	980 mV @ 1 A
CRS01(TE85L) DIODE SCHOTTKY 30V 1A SFLAT Toshiba Semiconductor and Storage	3,023	-	RFQ	Ficha técnica	Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	1.5 mA @ 30 V	30 V	1A	-40°C ~ 125°C	360 mV @ 1 A
CRS04(TE85L) DIODE SCHOTTKY 40V 1A SFLAT Toshiba Semiconductor and Storage	3,996	-	RFQ	Ficha técnica	Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	100 µA @ 40 V	40 V	1A	-40°C ~ 150°C	510 mV @ 1 A
CRS08(TE85L) DIODE SCHOTTKY 30V 1.5A SFLAT Toshiba Semiconductor and Storage	2,713	-	RFQ	Ficha técnica	Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	1 mA @ 30 V	30 V	1.5A	-40°C ~ 125°C	360 mV @ 1.5 A