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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
CLH06(TE16L,Q) DIODE GEN PURP 300V 5A L-FLAT Toshiba Semiconductor and Storage	2,495	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	35 ns	-	300 V	5A (DC)	-	-
CLH06(TE16R,Q) DIODE GEN PURP 300V 5A L-FLAT Toshiba Semiconductor and Storage	2,194	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	35 ns	-	300 V	5A (DC)	-	-
1SS403E,L3F SINGLE SWITCHING DIODE 200V 0.1A Toshiba Semiconductor and Storage	3,992	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	3pF @ 0V, 1MHz	60 ns	1 µA @ 200 V	200 V	100mA	150°C (Max)	1.2 V @ 100 mA
CLH07(TE16L,NMB,Q) DIODE GEN PURP 400V 5A L-FLAT Toshiba Semiconductor and Storage	3,374	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	35 ns	10 µA @ 400 V	400 V	5A (DC)	-40°C ~ 150°C	1.8 V @ 5 A
CLH07(TE16R,Q) DIODE GEN PURP 400V 5A L-FLAT Toshiba Semiconductor and Storage	3,701	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	35 ns	10 µA @ 400 V	400 V	5A (DC)	-40°C ~ 150°C	1.8 V @ 5 A
1SS322(TE85L,F) SMALL-SIGNAL SCHOTTKY BARRIER DI Toshiba Semiconductor and Storage	3,598	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	18pF @ 0V, 1MHz	-	5 µA @ 40 V	40 V	100mA	125°C (Max)	600 mV @ 100 mA
CLS01(T6LSONY,Q) DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage	3,403	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	530pF @ 10V, 1MHz	-	1 mA @ 30 V	30 V	10A (DC)	-40°C ~ 125°C	470 mV @ 10 A
CLS01(TE16L,PAS,Q) DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage	3,842	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	530pF @ 10V, 1MHz	-	1 mA @ 30 V	30 V	10A (DC)	-40°C ~ 125°C	470 mV @ 10 A
CLS01(TE16R,Q) DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage	3,247	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	530pF @ 10V, 1MHz	-	1 mA @ 30 V	30 V	10A (DC)	-40°C ~ 125°C	470 mV @ 10 A
CLS01,LFJFQ(O DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage	2,978	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	530pF @ 10V, 1MHz	-	1 mA @ 30 V	30 V	10A (DC)	-40°C ~ 125°C	0.47 V @ 10 A
CLS02(T6L,CANO-O,Q DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage	3,349	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	420pF @ 10V, 1MHz	-	1 mA @ 40 V	40 V	10A (DC)	-40°C ~ 125°C	0.55 V @ 10 A
CLS02(T6L,CLAR,Q) DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage	2,271	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	420pF @ 10V, 1MHz	-	1 mA @ 40 V	40 V	10A (DC)	-40°C ~ 125°C	0.55 V @ 10 A
CUS05S30,H3F DIODE SCHOTTKY 30V 500MA USC Toshiba Semiconductor and Storage	2,938	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	55pF @ 0V, 1MHz	-	150 µA @ 10 V	30 V	500mA	125°C (Max)	340 mV @ 100 mA
1SS413CT,L3F DIODE SCHOTTKY 20V 50MA SOD882 Toshiba Semiconductor and Storage	2,651	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	3.9pF @ 0V, 1MHz	-	500 nA @ 20 V	20 V	50mA	-55°C ~ 125°C	550 mV @ 50 mA
CLS02(TE16L,HIT,Q) DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage	2,612	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	420pF @ 10V, 1MHz	-	1 mA @ 40 V	40 V	10A (DC)	-40°C ~ 125°C	0.55 V @ 10 A
CLS02(TE16L,SQC,Q) DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage	2,860	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	420pF @ 10V, 1MHz	-	1 mA @ 40 V	40 V	10A (DC)	-40°C ~ 125°C	0.55 V @ 10 A
CLS02(TE16R,Q) DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage	2,443	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	420pF @ 10V, 1MHz	-	1 mA @ 40 V	40 V	10A (DC)	-40°C ~ 125°C	0.55 V @ 10 A
CLS03(T6L,CANO-O,Q DIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage	2,676	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	345pF @ 10V, 1MHz	-	1 mA @ 60 V	60 V	10A (DC)	-40°C ~ 125°C	0.58 V @ 10 A
CLS03(T6L,SHINA,Q) DIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage	3,714	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	345pF @ 10V, 1MHz	-	1 mA @ 60 V	60 V	10A (DC)	-40°C ~ 125°C	0.58 V @ 10 A
CLS03(TE16L,DNSO,Q DIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage	3,252	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	345pF @ 10V, 1MHz	-	1 mA @ 60 V	60 V	10A (DC)	-40°C ~ 125°C	0.58 V @ 10 A