Más categorías de productos

Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
CRS09(TE85L) DIODE SCHOTTKY 30V 1.5A SFLAT Toshiba Semiconductor and Storage	3,582	-	RFQ	Ficha técnica	Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	50 µA @ 30 V	30 V	1.5A	-40°C ~ 150°C	460 mV @ 1.5 A
CRS11(TE85L) DIODE SCHOTTKY 30V 1A SFLAT Toshiba Semiconductor and Storage	3,643	-	RFQ	Ficha técnica	Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	1.5 mA @ 30 V	30 V	1A	-40°C ~ 125°C	360 mV @ 1 A
1SS389,H3F DIODE SCHOTTKY 40V 100MA ESC Toshiba Semiconductor and Storage	2,821	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Obsolete	Surface Mount	25pF @ 0V, 1MHz	-	5 µA @ 10 V	40 V	100mA	125°C (Max)	600 mV @ 50 mA
BAS516,L3F DIODE GEN PURP 100V 250MA ESC Toshiba Semiconductor and Storage	3,621	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	0.35pF @ 0V, 1MHz	3 ns	200 nA @ 80 V	100 V	250mA	150°C (Max)	1.25 V @ 150 mA
1SS385FV,L3F SMALL-SIGNAL SCHOTTKY BARRIER DI Toshiba Semiconductor and Storage	7,560	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	20pF @ 0V, 1MHz	-	20 µA @ 10 V	10 V	100mA	125°C (Max)	500 mV @ 100 mA
CUS357,H3F SMALL SIGNAL SCHOTTKY BARRIER DI Toshiba Semiconductor and Storage	2,685	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	11pF @ 0V, 1MHz	-	5 µA @ 40 V	40 V	100mA	125°C (Max)	600 mV @ 100 mA
1SS370TE85LF DIODE GEN PURP 200V 100MA SC70 Toshiba Semiconductor and Storage	2,911	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	3pF @ 0V, 1MHz	60 ns	1 µA @ 200 V	200 V	100mA	125°C (Max)	1.2 V @ 100 mA
CTS521,L3F DIODE SCHOTTKY 30V 200MA CST2 Toshiba Semiconductor and Storage	10,008	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	25pF @ 0V, 1MHz	-	30 µA @ 30 V	30 V	200mA	125°C (Max)	500 mV @ 200 mA
CUS520,H3F DIODE SCHOTTKY 30V 200MA Toshiba Semiconductor and Storage	2,268	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	17pF @ 0V, 1MHz	-	5 µA @ 30 V	30 V	200mA	125°C (Max)	280 mV @ 10 mA
TRS6E65C,S1AQ DIODE SCHOTTKY 650V 6A TO220-2L Toshiba Semiconductor and Storage	2,562	-	RFQ	Ficha técnica	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Through Hole	35pF @ 650V, 1MHz	0 ns	90 µA @ 650 V	650 V	6A (DC)	175°C (Max)	1.7 V @ 6 A
TRS8E65C,S1Q DIODE SCHOTTKY 650V 8A TO220-2L Toshiba Semiconductor and Storage	2,008	-	RFQ	Ficha técnica	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Through Hole	44pF @ 650V, 1MHz	0 ns	90 µA @ 650 V	650 V	8A (DC)	175°C (Max)	1.7 V @ 8 A
TRS12E65C,S1Q DIODE SCHOTTKY 650V 12A TO220-2L Toshiba Semiconductor and Storage	3,084	-	RFQ	Ficha técnica	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Through Hole	65pF @ 650V, 1MHz	0 ns	90 µA @ 170 V	650 V	12A (DC)	175°C (Max)	1.7 V @ 12 A
1SS405,H3F DIODE SCHOTTKY 20V 50MA ESC Toshiba Semiconductor and Storage	11,993	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	3.9pF @ 0V, 1MHz	-	500 nA @ 20 V	20 V	50mA	125°C (Max)	550 mV @ 50 mA
CUS551V30,H3F DIODE SCHOTTKY 30V 500MA USC Toshiba Semiconductor and Storage	2,793	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 20 V	30 V	500mA	125°C (Max)	470 mV @ 500 mA
1SS417CT,L3F DIODE SCHOTTKY 40V 100MA FSC Toshiba Semiconductor and Storage	7,177	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	15pF @ 0V, 1MHz	-	5 µA @ 40 V	40 V	100mA	125°C (Max)	620 mV @ 100 mA
CUS05F30,H3F DIODE SCHOTTKY 30V 500MA USC Toshiba Semiconductor and Storage	8,949	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	120pF @ 0V, 1MHz	-	50 µA @ 30 V	30 V	500mA	-	450 mV @ 500 mA
CUS15S30,H3F DIODE SCHOTTKY 30V 1.5A Toshiba Semiconductor and Storage	1,264	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	200pF @ 0V, 1MHz	-	500 µA @ 30 V	30 V	1.5A	125°C (Max)	400 mV @ 1 A
CUHS15F40,H3F SMALL-SIGNAL SCHOTTKY BARRIER DI Toshiba Semiconductor and Storage	3,226	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	170pF @ 0V, 1MHz	-	200 µA @ 40 V	40 V	1.5A	150°C (Max)	510 mV @ 1.5 A
CCS15S40,L3F DIODE SCHOTTKY 40V 1.5A CST2C Toshiba Semiconductor and Storage	12,453	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	170pF @ 0V, 1MHz	-	200 µA @ 40 V	40 V	1.5A	125°C (Max)	550 mV @ 1.5 A
CCS15S30,L3F DIODE SCHOTTKY 20V 1.5A CST2C Toshiba Semiconductor and Storage	2,156	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	200pF @ 0V, 1MHz	-	500 µA @ 30 V	20 V	1.5A	125°C (Max)	400 mV @ 1 A