Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
CLS10F40,L3F

CLS10F40,L3F

SS SCHOTTKY BARRIER DIODE, HIGH-

Toshiba Semiconductor and Storage
7,210 -

RFQ

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 130pF @ 0V, 1MHz - 25 µA @ 40 V 40 V 1A 150°C 570 mV @ 1 A
CUHS15F30,H3F

CUHS15F30,H3F

SBD SINGLE 30V, 1.5A, IN 2 PIN U

Toshiba Semiconductor and Storage
2,850 -

RFQ

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 170pF @ 0V, 1MHz - 50 µA @ 30 V 30 V 1.5A 150°C 520 mV @ 1.5 A
U1GWJ49(TE12L,F)

U1GWJ49(TE12L,F)

DIODE SCHOTTKY 40V 1A PWMINI

Toshiba Semiconductor and Storage
2,331 -

RFQ

U1GWJ49(TE12L,F)

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 500 µA @ 40 V 40 V 1A -40°C ~ 125°C 550 mV @ 1 A
DSF07S30U(TPH3,F)

DSF07S30U(TPH3,F)

DIODE SCHOTTKY 30V 700MA USC

Toshiba Semiconductor and Storage
3,570 -

RFQ

DSF07S30U(TPH3,F)

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount 170pF @ 0V, 1MHz - 50 µA @ 30 V 30 V 700mA 125°C (Max) 450 mV @ 700 mA
DSF05S30U(TPH3,F)

DSF05S30U(TPH3,F)

DIODE SCHOTTKY 30V 500MA USC

Toshiba Semiconductor and Storage
3,374 -

RFQ

DSF05S30U(TPH3,F)

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - - 30 V 500mA 125°C (Max) 450 mV @ 500 mA
TRS8A65F,S1Q

TRS8A65F,S1Q

PB-F DIODE TO-220-2L V=650 IF=8A

Toshiba Semiconductor and Storage
200 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 28pF @ 650V, 1MHz 0 ns 40 µA @ 650 V 650 V 8A (DC) 175°C (Max) 1.6 V @ 8 A
TRS10A65F,S1Q

TRS10A65F,S1Q

PB-F DIODE TO-220-2L V=650 IF=10

Toshiba Semiconductor and Storage
238 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 36pF @ 650V, 1MHz 0 ns 50 µA @ 650 V 650 V 10A (DC) 175°C (Max) 1.6 V @ 10 A
TRS12A65F,S1Q

TRS12A65F,S1Q

PB-F DIODE TO-220-2L V=650 IF=12

Toshiba Semiconductor and Storage
188 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 44pF @ 650V, 1MHz 0 ns 60 µA @ 650 V 650 V 12A (DC) 175°C (Max) 1.6 V @ 12 A
TRS6A65F,S1Q

TRS6A65F,S1Q

PB-F DIODE TO-220-2L V=650 IF=6A

Toshiba Semiconductor and Storage
155 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 22pF @ 650V, 1MHz 0 ns 30 µA @ 650 V 650 V 6A (DC) 175°C (Max) 1.6 V @ 6 A
TRS4A65F,S1Q

TRS4A65F,S1Q

PB-F DIODE TO-220-2L V=650 IF=4A

Toshiba Semiconductor and Storage
204 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 16pF @ 650V, 1MHz 0 ns 20 µA @ 650 V 650 V 4A (DC) 175°C (Max) 1.6 V @ 4 A
TRS4E65F,S1Q

TRS4E65F,S1Q

PB-F DIODE TO-220-2L V=650 IF=4A

Toshiba Semiconductor and Storage
190 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 16pF @ 650V, 1MHz 0 ns 20 µA @ 650 V 650 V 4A (DC) 175°C (Max) 1.6 V @ 4 A
JDH2S02SL,L3F

JDH2S02SL,L3F

X34 HIGH FREQUENCY SCHOTTKY BARR

Toshiba Semiconductor and Storage
4,480 -

RFQ

JDH2S02SL,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 0.25pF @ 200mV, 1MHz - 25 µA @ 500 mV 10 V 10mA (DC) 125°C (Max) -
CBS05F30,L3F

CBS05F30,L3F

X34 PB-F CST2B SBD DIODE VR:30V,

Toshiba Semiconductor and Storage
3,672 -

RFQ

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 118pF @ 0V, 1MHz - 50 µA @ 30 V 30 V 500mA 125°C (Max) -
TRS8E65F,S1Q

TRS8E65F,S1Q

DODE SCHOTTKY 650V TO220

Toshiba Semiconductor and Storage
3,184 -

RFQ

TRS8E65F,S1Q

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 28pF @ 650V, 1MHz 0 ns 40 µA @ 650 V 650 V 8A (DC) 175°C (Max) 1.6 V @ 8 A
1SS394TE85LF

1SS394TE85LF

DIODE SCHOTTKY 10V 100MA SC59

Toshiba Semiconductor and Storage
1,000 -

RFQ

1SS394TE85LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 40pF @ 0V, 1MHz - 20 µA @ 10 V 10 V 100mA 125°C (Max) 500 mV @ 100 mA
CRG09A,LQ(M

CRG09A,LQ(M

DIODE GEN PURP 400V 1A SFLAT

Toshiba Semiconductor and Storage
2,366 -

RFQ

CRG09A,LQ(M

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 5 µA @ 400 V 400 V 1A 150°C (Max) 1.1 V @ 700 mA
CUHS10F60,H3F

CUHS10F60,H3F

SMALL-SIGNAL SCHOTTKY BARRIER DI

Toshiba Semiconductor and Storage
3,543 -

RFQ

CUHS10F60,H3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 130pF @ 0V, 1MHz - 40 µA @ 60 V 60 V 1A 150°C (Max) -
TRS3E65F,S1Q

TRS3E65F,S1Q

PB-F DIODE TO-220-2L V=650 IF=3A

Toshiba Semiconductor and Storage
190 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 12pF @ 650V, 1MHz 0 ns 20 µA @ 650 V 650 V 3A (DC) 175°C (Max) 1.6 V @ 3 A
1SS196(TE85L,F)

1SS196(TE85L,F)

DIODE GEN PURP 80V 100MA SC59-3

Toshiba Semiconductor and Storage
241 -

RFQ

1SS196(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 3pF @ 0V, 1MHz 4 ns 500 nA @ 80 V 80 V 100mA 125°C (Max) 1.2 V @ 100 mA
DSR01S30SL,L3F

DSR01S30SL,L3F

DIODE SCHOTTKY 30V 100MA SL2

Toshiba Semiconductor and Storage
699 -

RFQ

DSR01S30SL,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 8.2pF @ 0V, 1MHz - 700 nA @ 30 V 30 V 100mA 125°C (Max) 620 mV @ 100 mA
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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