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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
CRS01(TE85L,Q,M) DIODE SCHOTTKY 30V 1A SFLAT Toshiba Semiconductor and Storage	3,873	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	40pF @ 10V, 1MHz	-	1.5 mA @ 30 V	30 V	1A	-40°C ~ 125°C	360 mV @ 1 A
CMS06(TE12L,Q,M) DIODE SCHOTTKY 30V 2A MFLAT Toshiba Semiconductor and Storage	3,177	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	130pF @ 10V, 1MHz	-	3 mA @ 30 V	30 V	2A	-40°C ~ 125°C	370 mV @ 2 A
CRS09(TE85L,Q,M) DIODE SCHOTTKY 30V 1.5A SFLAT Toshiba Semiconductor and Storage	3,606	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	90pF @ 10V, 1MHz	-	50 µA @ 30 V	30 V	1.5A	-40°C ~ 150°C	460 mV @ 1.5 A
CRH01(TE85L,Q,M) DIODE GEN PURP 200V 1A SFLAT Toshiba Semiconductor and Storage	3,169	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	10 µA @ 200 V	200 V	1A	-40°C ~ 150°C	980 mV @ 1 A
CMS01(TE12L,Q,M) DIODE SCHOTTKY 30V 3A MFLAT Toshiba Semiconductor and Storage	3,805	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	5 mA @ 30 V	30 V	3A	-40°C ~ 125°C	370 mV @ 3 A
CUS15S40,H3F DIODE SCHOTTKY 40V 1.5A Toshiba Semiconductor and Storage	3,016	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	170pF @ 0V, 1MHz	-	200 µA @ 40 V	40 V	1.5A	125°C (Max)	450 mV @ 1 A
CMH05A(TE12L,Q,M) DIODE GEN PURP 400V 1A MFLAT Toshiba Semiconductor and Storage	3,375	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	35 ns	10 µA @ 400 V	400 V	1A	-40°C ~ 150°C	1.8 V @ 1 A
CMH08A(TE12L,Q,M) DIODE GEN PURP 400V 2A MFLAT Toshiba Semiconductor and Storage	2,008	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	35 ns	10 µA @ 400 V	400 V	2A	-40°C ~ 150°C	1.8 V @ 2 A
CES520,L3F DIODE SCHOTTKY 30V 200MA ESC Toshiba Semiconductor and Storage	2,334	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	17pF @ 0V, 1MHz	-	5 µA @ 30 V	30 V	200mA	125°C (Max)	600 mV @ 200 mA
CES521,L3F DIODE SCHOTTKY 30V 200MA ESC Toshiba Semiconductor and Storage	3,330	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	26pF @ 0V, 1MHz	-	30 µA @ 30 V	30 V	200mA	125°C (Max)	500 mV @ 200 mA
CUHS20S30,H3F SCHOTTKY BARRIER DIODE, LOW VF, Toshiba Semiconductor and Storage	2,374	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	390pF @ 0V, 1MHz	-	500 µA @ 30 V	30 V	2A	150°C (Max)	410 mV @ 2 A
CUHS20S40,H3F SCHOTTKY BARRIER DIODE, LOW VF, Toshiba Semiconductor and Storage	3,213	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	290pF @ 0V, 1MHz	-	300 µA @ 40 V	40 V	2A	150°C (Max)	470 mV @ 2 A
CUHS15S30,H3F SBD SINGLE 30V, 1.5A, IN 2 PIN U Toshiba Semiconductor and Storage	2,877	-	RFQ		Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	200pF @ 0V, 1MHz	-	500 µA @ 30 V	30 V	1.5A	150°C	430 mV @ 1.5 A
1SS307E,L3F DIODE GEN PURP 80V 100MA SC79 Toshiba Semiconductor and Storage	2,719	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	6pF @ 0V, 1MHz	-	10 nA @ 80 V	80 V	100mA	150°C (Max)	1.3 V @ 100 mA
CES388,L3F DIODE SCHOTTKY 40V 100MA ESC Toshiba Semiconductor and Storage	2,309	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	25pF @ 0V, 1MHz	-	5 µA @ 40 V	40 V	100mA	125°C (Max)	600 mV @ 100 mA
1SS389,L3F DIODE SCHOTTKY 10V 100MA ESC Toshiba Semiconductor and Storage	3,172	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	40pF @ 0V, 1MHz	-	20 µA @ 10 V	10 V	100mA	125°C (Max)	500 mV @ 100 mA
1SS387CT,L3F DIODE GEN PURP 80V 100MA CST2 Toshiba Semiconductor and Storage	3,845	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	0.5pF @ 0V, 1MHz	1.6 ns	500 nA @ 80 V	80 V	100mA	150°C (Max)	1.2 V @ 100 mA
DSF01S30SC(TPL3) DIODE SCHOTTKY 30V 100MA SC2 Toshiba Semiconductor and Storage	3,600	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	9.3pF @ 0V, 1MHz	-	50 µA @ 30 V	30 V	100mA	125°C (Max)	500 mV @ 100 mA
DSR01S30SC(TPL3) DIODE SCHOTTKY 30V 100MA SC2 Toshiba Semiconductor and Storage	2,445	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Obsolete	Surface Mount	8.2pF @ 0V, 1MHz	-	700 µA @ 30 V	30 V	100mA	125°C (Max)	620 mV @ 100 mA
CRS04(TE85L,Q,M) DIODE SCHOTTKY 40V 1A SFLAT Toshiba Semiconductor and Storage	679	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	47pF @ 10V, 1MHz	-	100 µA @ 40 V	40 V	1A	-40°C ~ 150°C	510 mV @ 1 A