Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
CRS01(TE85L,Q,M)

CRS01(TE85L,Q,M)

DIODE SCHOTTKY 30V 1A SFLAT

Toshiba Semiconductor and Storage
3,873 -

RFQ

CRS01(TE85L,Q,M)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 40pF @ 10V, 1MHz - 1.5 mA @ 30 V 30 V 1A -40°C ~ 125°C 360 mV @ 1 A
CMS06(TE12L,Q,M)

CMS06(TE12L,Q,M)

DIODE SCHOTTKY 30V 2A MFLAT

Toshiba Semiconductor and Storage
3,177 -

RFQ

CMS06(TE12L,Q,M)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 130pF @ 10V, 1MHz - 3 mA @ 30 V 30 V 2A -40°C ~ 125°C 370 mV @ 2 A
CRS09(TE85L,Q,M)

CRS09(TE85L,Q,M)

DIODE SCHOTTKY 30V 1.5A SFLAT

Toshiba Semiconductor and Storage
3,606 -

RFQ

CRS09(TE85L,Q,M)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 90pF @ 10V, 1MHz - 50 µA @ 30 V 30 V 1.5A -40°C ~ 150°C 460 mV @ 1.5 A
CRH01(TE85L,Q,M)

CRH01(TE85L,Q,M)

DIODE GEN PURP 200V 1A SFLAT

Toshiba Semiconductor and Storage
3,169 -

RFQ

CRH01(TE85L,Q,M)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 10 µA @ 200 V 200 V 1A -40°C ~ 150°C 980 mV @ 1 A
CMS01(TE12L,Q,M)

CMS01(TE12L,Q,M)

DIODE SCHOTTKY 30V 3A MFLAT

Toshiba Semiconductor and Storage
3,805 -

RFQ

CMS01(TE12L,Q,M)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 5 mA @ 30 V 30 V 3A -40°C ~ 125°C 370 mV @ 3 A
CUS15S40,H3F

CUS15S40,H3F

DIODE SCHOTTKY 40V 1.5A

Toshiba Semiconductor and Storage
3,016 -

RFQ

CUS15S40,H3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 170pF @ 0V, 1MHz - 200 µA @ 40 V 40 V 1.5A 125°C (Max) 450 mV @ 1 A
CMH05A(TE12L,Q,M)

CMH05A(TE12L,Q,M)

DIODE GEN PURP 400V 1A MFLAT

Toshiba Semiconductor and Storage
3,375 -

RFQ

CMH05A(TE12L,Q,M)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 35 ns 10 µA @ 400 V 400 V 1A -40°C ~ 150°C 1.8 V @ 1 A
CMH08A(TE12L,Q,M)

CMH08A(TE12L,Q,M)

DIODE GEN PURP 400V 2A MFLAT

Toshiba Semiconductor and Storage
2,008 -

RFQ

CMH08A(TE12L,Q,M)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 35 ns 10 µA @ 400 V 400 V 2A -40°C ~ 150°C 1.8 V @ 2 A
CES520,L3F

CES520,L3F

DIODE SCHOTTKY 30V 200MA ESC

Toshiba Semiconductor and Storage
2,334 -

RFQ

CES520,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 17pF @ 0V, 1MHz - 5 µA @ 30 V 30 V 200mA 125°C (Max) 600 mV @ 200 mA
CES521,L3F

CES521,L3F

DIODE SCHOTTKY 30V 200MA ESC

Toshiba Semiconductor and Storage
3,330 -

RFQ

CES521,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 26pF @ 0V, 1MHz - 30 µA @ 30 V 30 V 200mA 125°C (Max) 500 mV @ 200 mA
CUHS20S30,H3F

CUHS20S30,H3F

SCHOTTKY BARRIER DIODE, LOW VF,

Toshiba Semiconductor and Storage
2,374 -

RFQ

CUHS20S30,H3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 390pF @ 0V, 1MHz - 500 µA @ 30 V 30 V 2A 150°C (Max) 410 mV @ 2 A
CUHS20S40,H3F

CUHS20S40,H3F

SCHOTTKY BARRIER DIODE, LOW VF,

Toshiba Semiconductor and Storage
3,213 -

RFQ

CUHS20S40,H3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 290pF @ 0V, 1MHz - 300 µA @ 40 V 40 V 2A 150°C (Max) 470 mV @ 2 A
CUHS15S30,H3F

CUHS15S30,H3F

SBD SINGLE 30V, 1.5A, IN 2 PIN U

Toshiba Semiconductor and Storage
2,877 -

RFQ

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 200pF @ 0V, 1MHz - 500 µA @ 30 V 30 V 1.5A 150°C 430 mV @ 1.5 A
1SS307E,L3F

1SS307E,L3F

DIODE GEN PURP 80V 100MA SC79

Toshiba Semiconductor and Storage
2,719 -

RFQ

1SS307E,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 6pF @ 0V, 1MHz - 10 nA @ 80 V 80 V 100mA 150°C (Max) 1.3 V @ 100 mA
CES388,L3F

CES388,L3F

DIODE SCHOTTKY 40V 100MA ESC

Toshiba Semiconductor and Storage
2,309 -

RFQ

CES388,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 25pF @ 0V, 1MHz - 5 µA @ 40 V 40 V 100mA 125°C (Max) 600 mV @ 100 mA
1SS389,L3F

1SS389,L3F

DIODE SCHOTTKY 10V 100MA ESC

Toshiba Semiconductor and Storage
3,172 -

RFQ

1SS389,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 40pF @ 0V, 1MHz - 20 µA @ 10 V 10 V 100mA 125°C (Max) 500 mV @ 100 mA
1SS387CT,L3F

1SS387CT,L3F

DIODE GEN PURP 80V 100MA CST2

Toshiba Semiconductor and Storage
3,845 -

RFQ

1SS387CT,L3F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 0.5pF @ 0V, 1MHz 1.6 ns 500 nA @ 80 V 80 V 100mA 150°C (Max) 1.2 V @ 100 mA
DSF01S30SC(TPL3)

DSF01S30SC(TPL3)

DIODE SCHOTTKY 30V 100MA SC2

Toshiba Semiconductor and Storage
3,600 -

RFQ

DSF01S30SC(TPL3)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 9.3pF @ 0V, 1MHz - 50 µA @ 30 V 30 V 100mA 125°C (Max) 500 mV @ 100 mA
DSR01S30SC(TPL3)

DSR01S30SC(TPL3)

DIODE SCHOTTKY 30V 100MA SC2

Toshiba Semiconductor and Storage
2,445 -

RFQ

DSR01S30SC(TPL3)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Obsolete Surface Mount 8.2pF @ 0V, 1MHz - 700 µA @ 30 V 30 V 100mA 125°C (Max) 620 mV @ 100 mA
CRS04(TE85L,Q,M)

CRS04(TE85L,Q,M)

DIODE SCHOTTKY 40V 1A SFLAT

Toshiba Semiconductor and Storage
679 -

RFQ

CRS04(TE85L,Q,M)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 47pF @ 10V, 1MHz - 100 µA @ 40 V 40 V 1A -40°C ~ 150°C 510 mV @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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