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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
CLS03(TE16L,PCD,Q) DIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage	3,178	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	345pF @ 10V, 1MHz	-	1 mA @ 60 V	60 V	10A (DC)	-40°C ~ 125°C	0.58 V @ 10 A
CLS03(TE16L,PSD,Q) DIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage	3,309	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	345pF @ 10V, 1MHz	-	1 mA @ 60 V	60 V	10A (DC)	-40°C ~ 125°C	0.58 V @ 10 A
CLS03(TE16L,SQC,Q) DIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage	2,759	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	345pF @ 10V, 1MHz	-	1 mA @ 60 V	60 V	10A (DC)	-40°C ~ 125°C	0.58 V @ 10 A
CLS03(TE16R,Q) DIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage	3,297	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	345pF @ 10V, 1MHz	-	1 mA @ 60 V	60 V	10A (DC)	-40°C ~ 125°C	0.58 V @ 10 A
CLS03,LNITTOQ(O DIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage	2,380	-	RFQ	Ficha técnica	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	345pF @ 10V, 1MHz	-	1 mA @ 60 V	60 V	10A (DC)	-40°C ~ 125°C	0.58 V @ 10 A
CUS05S40,H3F DIODE SCHOTTKY 40V 500MA USC Toshiba Semiconductor and Storage	3,093	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	42pF @ 0V, 1MHz	-	30 µA @ 10 V	40 V	500mA	125°C (Max)	350 mV @ 100 mA
DSR01S30SC,L3F DIODE SCHOTTKY 30V 100MA SC2 Toshiba Semiconductor and Storage	3,372	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Obsolete	Surface Mount	8.2pF @ 0V, 1MHz	-	700 µA @ 30 V	30 V	100mA	125°C (Max)	620 mV @ 100 mA
CCS15S30,L3IDTF DIODE SCHOTTKY 20V 1.5A CST2C Toshiba Semiconductor and Storage	3,236	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	200pF @ 0V, 1MHz	-	500 µA @ 30 V	20 V	1.5A	125°C (Max)	400 mV @ 1 A
CCS15S30,L3QUF DIODE SCHOTTKY 20V 1.5A CST2C Toshiba Semiconductor and Storage	2,910	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	200pF @ 0V, 1MHz	-	500 µA @ 30 V	20 V	1.5A	125°C (Max)	400 mV @ 1 A
CTS05S40,L3F DIODE SCHOTTKY 40V 500MA CST2 Toshiba Semiconductor and Storage	3,886	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	42pF @ 0V, 1MHz	-	30 µA @ 10 V	40 V	500mA	125°C (Max)	350 mV @ 100 mA
CMF05(TE12L,Q,M) DIODE GEN PURP 1KV 500MA MFLAT Toshiba Semiconductor and Storage	3,560	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	100 ns	50 µA @ 800 V	1000 V	500mA	-40°C ~ 125°C	2.7 V @ 500 mA
CMS11(TE12L,Q,M) DIODE SCHOTTKY 40V 2A MFLAT Toshiba Semiconductor and Storage	3,163	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	95pF @ 10V, 1MHz	-	500 µA @ 40 V	40 V	2A	-40°C ~ 150°C	550 mV @ 2 A
1SS388(TL3,F,D) DIODE SCHOTTKY 45V 100MA ESC Toshiba Semiconductor and Storage	3,517	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Obsolete	Surface Mount	18pF @ 0V, 1MHz	-	5 µA @ 10 V	45 V	100mA	-40°C ~ 100°C	600 mV @ 50 mA
CMS05(TE12L,Q,M) DIODE SCHOTTKY 30V 5A MFLAT Toshiba Semiconductor and Storage	3,076	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	330pF @ 10V, 1MHz	-	800 µA @ 30 V	30 V	5A	-40°C ~ 150°C	450 mV @ 5 A
TRS2E65F,S1Q PB-F DIODE TO-220-2L IF=2A VRRM= Toshiba Semiconductor and Storage	3,981	-	RFQ		Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	8.7pF @ 650V, 1MHz	0 ns	20 µA @ 650 V	650 V	2A (DC)	175°C (Max)	1.6 V @ 2 A
TRS6E65F,S1Q DODE SCHOTTKY 650V TO220 Toshiba Semiconductor and Storage	2,670	-	RFQ	Ficha técnica	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	22pF @ 650V, 1MHz	0 ns	30 µA @ 650 V	650 V	6A (DC)	175°C (Max)	1.6 V @ 6 A
1SS187,LF DIODE GEN PURP 80V 100MA S-MINI Toshiba Semiconductor and Storage	3,252	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	4pF @ 0V, 1MHz	4 ns	500 nA @ 80 V	80 V	100mA	125°C (Max)	1.2 V @ 100 mA
CTS05F40,L3F DIODE SCHOTTKY 40V 500MA CST2 Toshiba Semiconductor and Storage	2,522	-	RFQ	Ficha técnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	28pF @ 0V, 1MHz	-	15 µA @ 40 V	40 V	500mA	150°C (Max)	810 mV @ 500 mA
TRS10E65F,S1Q DODE SCHOTTKY 650V TO220 Toshiba Semiconductor and Storage	2,123	-	RFQ	Ficha técnica	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	36pF @ 650V, 1MHz	0 ns	50 µA @ 650 V	650 V	10A (DC)	175°C (Max)	1.6 V @ 10 A
TRS12E65F,S1Q DODE SCHOTTKY 650V TO220 Toshiba Semiconductor and Storage	3,245	-	RFQ		Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	65pF @ 650V, 1MHz	0 ns	90 µA @ 650 V	650 V	12A (DC)	175°C (Max)	1.7 V @ 12 A