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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CBS10S30,L3FDIODE SCHOTTKY 20V 1A CST2B Toshiba Semiconductor and Storage |
2,573 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 135pF @ 0V, 1MHz | - | 500 µA @ 30 V | 20 V | 1A | 125°C (Max) | 450 mV @ 1 A | |
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CBS10S40,L3FDIODE SCHOTTKY 40V 1A CST2B Toshiba Semiconductor and Storage |
3,609 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 120pF @ 0V, 1MHz | - | 150 µA @ 40 V | 40 V | 1A | 125°C (Max) | 550 mV @ 1 A | |
|
CBS10F40,L3FDIODE SCHOTTKY 40V 1A CST2B Toshiba Semiconductor and Storage |
2,599 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 74pF @ 0V, 1MHz | - | 20 µA @ 40 V | 40 V | 1A | 150°C (Max) | 700 mV @ 1 A | |
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CRG07(TE85L,Q,M)DIODE GEN PURP 400V 700MA S-FLAT Toshiba Semiconductor and Storage |
3,507 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 400 V | 400 V | 700mA | 175°C (Max) | 1.1 V @ 700 mA | |
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CMG06(TE12L,Q,M)DIODE GEN PURP 600V 1A M-FLAT Toshiba Semiconductor and Storage |
2,932 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | - | 10 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 1.1 V @ 1 A | |
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1SS250(TE85L,F)DIODE GEN PURP 200V 100MA SC59 Toshiba Semiconductor and Storage |
2,893 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Not For New Designs | Surface Mount | 3pF @ 0V, 1MHz | 60 ns | 1 µA @ 200 V | 200 V | 100mA | 125°C (Max) | 1.2 V @ 100 mA | |
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CMG07(TE12L,Q,M)DIODE GEN PURP 400V 1A M-FLAT Toshiba Semiconductor and Storage |
3,775 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | 100 ns | - | 400 V | 1A | - | - | |
|
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CMH02A(TE12L,Q,M)DIODE GEN PURP 400V 3A M-FLAT Toshiba Semiconductor and Storage |
3,387 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 100 ns | 10 µA @ 400 V | 400 V | 3A | -40°C ~ 150°C | 1.8 V @ 3 A | |
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CMH05(TE12L,Q,M)DIODE GEN PURP 400V 1A M-FLAT Toshiba Semiconductor and Storage |
3,266 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 100 ns | 10 µA @ 400 V | 400 V | 1A | -40°C ~ 150°C | 1.3 V @ 1 A | |
|
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CMH08(TE12L,Q,M)DIODE GEN PURP 400V 2A M-FLAT Toshiba Semiconductor and Storage |
3,669 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 100 ns | 10 µA @ 400 V | 400 V | 2A | -40°C ~ 150°C | 1.3 V @ 2 A | |
|
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CRG09(TE85L,Q,M)DIODE GEN PURP 400V 1A S-FLAT Toshiba Semiconductor and Storage |
2,788 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 10 µA @ 400 V | 400 V | 1A | -40°C ~ 150°C | 1.1 V @ 700 mA | |
|
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CUS03(TE85L,Q,M)DIODE SCHOTTKY 40V 700MA US-FLAT Toshiba Semiconductor and Storage |
2,037 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 45pF @ 10V, 1MHz | - | 100 µA @ 40 V | 40 V | 700mA | -40°C ~ 150°C | 520 mV @ 700 mA | |
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CUS04(TE85L,Q,M)DIODE SCHOTTKY 60V 700MA US-FLAT Toshiba Semiconductor and Storage |
2,449 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 38pF @ 10V, 1MHz | - | 100 µA @ 60 V | 60 V | 700mA | -40°C ~ 150°C | 580 mV @ 700 mA | |
|
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CUS05(TE85L,Q,M)DIODE SCHOTTKY 20V 1A US-FLAT Toshiba Semiconductor and Storage |
2,455 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 40pF @ 10V, 1MHz | - | 1 mA @ 20 V | 20 V | 1A | -40°C ~ 125°C | 370 mV @ 700 mA | |
|
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CUS06(TE85L,Q,M)DIODE SCHOTTKY 20V 1A US-FLAT Toshiba Semiconductor and Storage |
2,031 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 40pF @ 10V, 1MHz | - | 30 µA @ 20 V | 20 V | 1A | -40°C ~ 150°C | 450 mV @ 700 mA | |
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CUS10I30A(TE85L,QMDIODE SCHOTTKY 30V 1A US-FLAT Toshiba Semiconductor and Storage |
2,541 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 50pF @ 10V, 1MHz | - | 60 µA @ 30 V | 30 V | 1A | 150°C (Max) | 390 mV @ 700 mA | |
|
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CUS10I40A(TE85L,QMDIODE SCHOTTKY 40V 1A US-FLAT Toshiba Semiconductor and Storage |
3,540 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 35pF @ 10V, 1MHz | - | 60 µA @ 40 V | 40 V | 1A | 150°C (Max) | 490 mV @ 700 mA | |
|
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CUS15I30A(TE85L,QMDIODE SCHOTTKY 30V 1.5A US-FLAT Toshiba Semiconductor and Storage |
2,266 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 50pF @ 10V, 1MHz | - | 60 µA @ 30 V | 30 V | 1.5A | 150°C (Max) | 460 mV @ 1.5 A | |
|
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CMF02(TE12L,Q,M)DIODE GEN PURP 600V 1A M-FLAT Toshiba Semiconductor and Storage |
2,384 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | - | 50 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 2 V @ 1 A | |
|
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CRS20I30B(TE85L,QMDIODE SCHOTTKY 30V 2A S-FLAT Toshiba Semiconductor and Storage |
2,298 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 82pF @ 10V, 1MHz | - | 100 µA @ 30 V | 30 V | 2A | 150°C (Max) | 450 mV @ 2 A |
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