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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CMC02(TE12L,Q,M)DIODE GEN PURP 400V 1A M-FLAT Toshiba Semiconductor and Storage |
2,966 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | - | 10 µA @ 400 V | 400 V | 1A | -40°C ~ 150°C | 1 V @ 1 A | |
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CRS10I30A(TE85L,QMDIODE SCHOTTKY 30V 1A US-FLAT Toshiba Semiconductor and Storage |
3,513 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 10V, 1MHz | - | 60 µA @ 30 V | 30 V | 1A | 150°C | 390 mV @ 700 mA | ||
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CMG05(TE12L,Q,M)DIODE GEN PURP 400V 1A M-FLAT Toshiba Semiconductor and Storage |
2,969 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | - | 10 µA @ 400 V | 400 V | 1A | -40°C ~ 150°C | 1.1 V @ 1 A | |
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CRH02(TE85L,Q,M)DIODE GEN PURP 200V 500MA S-FLAT Toshiba Semiconductor and Storage |
3,513 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 500mA | 150°C (Max) | 950 mV @ 500 mA | |
|
CRS05(TE85L,Q,M)DIODE SCHOTTKY 30V 1A SFLAT Toshiba Semiconductor and Storage |
2,233 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 1A | -40°C ~ 150°C | 450 mV @ 1 A | |
|
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CRS10I40A(TE85L,QMDIODE GEN PURP 40V 1A S-FLAT Toshiba Semiconductor and Storage |
2,384 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 35pF @ 10V, 1MHz | - | 60 µA @ 40 V | 40 V | 1A | 150°C (Max) | 490 mV @ 700 mA | |
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CRS10I40B(TE85L,QMDIODE SCHOTTKY 40V 1A S-FLAT Toshiba Semiconductor and Storage |
2,859 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 62pF @ 10V, 1MHz | - | 100 µA @ 40 V | 40 V | 1A | 150°C (Max) | 450 mV @ 1 A | |
|
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CRF02(TE85L,Q,M)DIODE GEN PURP 800V 500MA S-FLAT Toshiba Semiconductor and Storage |
2,546 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 100 ns | 50 µA @ 800 V | 800 V | 500mA | -40°C ~ 150°C | 3 V @ 500 mA | |
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CMS17(TE12L,Q,M)DIODE SCHOTTKY 30V 2A M-FLAT Toshiba Semiconductor and Storage |
2,034 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 90pF @ 10V, 1MHz | - | 100 µA @ 30 V | 30 V | 2A | -40°C ~ 150°C | 480 mV @ 2 A | |
|
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CMG02(TE12L,Q,M)DIODE GEN PURP 400V 2A M-FLAT Toshiba Semiconductor and Storage |
3,754 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | - | 10 µA @ 400 V | 400 V | 2A | -40°C ~ 150°C | 1.1 V @ 2 A | |
|
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CMS20I40A(TE12L,QMDIODE SCHOTTKY 40V 2A M-FLAT Toshiba Semiconductor and Storage |
2,016 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 62pF @ 10V, 1MHz | - | 100 µA @ 40 V | 40 V | 2A | 150°C (Max) | 520 mV @ 2 A | |
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CMS30I40A(TE12L,QMDIODE SCHOTTKY 40V 3A M-FLAT Toshiba Semiconductor and Storage |
2,771 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 62pF @ 10V, 1MHz | - | 100 µA @ 40 V | 40 V | 3A | 150°C (Max) | 550 mV @ 3 A | |
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CMS15(TE12L,Q,M)DIODE SCHOTTKY 60V 3A M-FLAT Toshiba Semiconductor and Storage |
3,264 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 102pF @ 10V, 1MHz | - | 300 µA @ 60 V | 60 V | 3A | -40°C ~ 150°C | 580 mV @ 3 A | |
|
CMS04(TE12L,Q,M)DIODE SCHOTTKY 30V 5A MFLAT Toshiba Semiconductor and Storage |
3,959 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 330pF @ 10V, 1MHz | - | 8 mA @ 30 V | 30 V | 5A | -40°C ~ 125°C | 370 mV @ 5 A | |
|
DSF01S30SL,L3FDIODE SCHOTTKY 30V 100MA SL2 Toshiba Semiconductor and Storage |
15,944 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 9.02pF @ 2V, 1MHz | - | 50 µA @ 30 V | 30 V | 100mA | 125°C (Max) | 500 mV @ 100 mA | |
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CRS06(TE85L,Q,M)DIODE SCHOTTKY 20V 1A SFLAT Toshiba Semiconductor and Storage |
12,447 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 60pF @ 10V, 1MHz | - | 1 mA @ 20 V | 20 V | 1A | -40°C ~ 125°C | 360 mV @ 1 A | |
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1SS321,LFSMALL SIGNAL SCHOTTKY BARRIER DI Toshiba Semiconductor and Storage |
4,540 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 3.2pF @ 0V, 1MHz | - | 500 nA @ 10 V | 10 V | 50mA | 125°C (Max) | 1 V @ 50 mA | |
|
CTS520,L3FDIODE SCHOTTKY 30V 200MA CST2 Toshiba Semiconductor and Storage |
232,387 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 16pF @ 0V, 1MHz | - | 5 µA @ 30 V | 30 V | 200mA | 125°C (Max) | 600 mV @ 200 mA | |
|
CUS08F30,H3FDIODE SCHOTTKY 30V 800MA USC Toshiba Semiconductor and Storage |
358,345 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 170pF @ 0V, 1MHz | - | 50 µA @ 30 V | 30 V | 800mA | 125°C (Max) | 220 mV @ 10 mA | |
|
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CUS10S30,H3FDIODE SCHOTTKY 30V 1A USC Toshiba Semiconductor and Storage |
2,415 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 135pF @ 0V, 1MHz | - | 500 µA @ 30 V | 30 V | 1A | 125°C (Max) | 230 mV @ 100 mA |
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