Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IHW50N65R6XKSA1

IHW50N65R6XKSA1

HOME APPLIANCES 14 PG-TO247-3

Infineon Technologies
3,054 -

RFQ

IHW50N65R6XKSA1

Ficha técnica

Tube - Active - 650 V 100 A 150 A 1.6V @ 15V, 50A 251 W 1.5mJ (on), 660µJ (off) Standard 199 nC 21ns/261ns 400V, 50A, 10Ohm, 15V 108 ns -40°C ~ 175°C (TJ) Through Hole
RJP30H1DPP-MZ#T2

RJP30H1DPP-MZ#T2

IGBT

Renesas Electronics America Inc
2,142 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SGW13N60UFDTM

SGW13N60UFDTM

N-CHANNEL IGBT

Fairchild Semiconductor
3,431 -

RFQ

SGW13N60UFDTM

Ficha técnica

Bulk - Obsolete - 600 V 13 A 52 A 2.6V @ 15V, 6.5A 60 W 85µJ (on), 95µJ (off) Standard 25 nC 20ns/70ns 300V, 6.5A, 50Ohm, 15V 55 ns - Surface Mount
RGTH80TS65GC11

RGTH80TS65GC11

650V 40A FIELD STOP TRENCH IGBT

Rohm Semiconductor
155 -

RFQ

RGTH80TS65GC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 70 A 160 A 2.1V @ 15V, 40A 234 W - Standard 79 nC 34ns/120ns 400V, 40A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IRG4PC30FPBF

IRG4PC30FPBF

FAST SPEED IGBT

International Rectifier
2,729 -

RFQ

IRG4PC30FPBF

Ficha técnica

Bulk - Active - 600 V 31 A 120 A 1.8V @ 15V, 17A 100 W 230µJ (on), 1.18mJ (off) Standard 77 nC 21ns/200ns 480V, 17A, 23Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IRGP4620D-EPBF

IRGP4620D-EPBF

IGBT WITH RECOVERY DIODE

International Rectifier
3,349 -

RFQ

IRGP4620D-EPBF

Ficha técnica

Tube - Obsolete - 600 V 32 A 36 A 1.85V @ 15V, 12A 140 W 75µJ (on), 225µJ (off) Standard 25 nC 31ns/83ns 400V, 12A, 22Ohm, 15V 68 ns -40°C ~ 175°C (TJ) Through Hole
IRG4BC30FD1PBF

IRG4BC30FD1PBF

IGBT, 31A I(C), 600V V(BR)CES, N

International Rectifier
2,562 -

RFQ

IRG4BC30FD1PBF

Ficha técnica

Bulk - Active - 600 V 31 A 124 A 1.8V @ 15V, 17A 100 W 370µJ (on), 1.42mJ (off) Standard 57 nC 22ns/250ns 480V, 17A, 23Ohm, 15V 46 ns -55°C ~ 150°C (TJ) Through Hole
HGTG7N60A4D

HGTG7N60A4D

N-CHANNEL IGBT

Harris Corporation
269 -

RFQ

HGTG7N60A4D

Ficha técnica

Tube - Obsolete - 600 V 34 A 56 A 2.7V @ 15V, 7A 125 W 55µJ (on), 60µJ (off) Standard 37 nC 11ns/100ns 390V, 7A, 25Ohm, 15V 34 ns -55°C ~ 150°C (TJ) Through Hole
IRGIB4630DPBF

IRGIB4630DPBF

IGBT WITH RECOVERY DIODE

International Rectifier
2,761 -

RFQ

IRGIB4630DPBF

Ficha técnica

Tube - Obsolete NPT 600 V 47 A 54 A 1.95V @ 15V, 18A 206 W 95µJ (on), 350µJ (off) Standard 35 nC 40ns/105ns 400V, 18A, 22Ohm, 15V 100 ns -40°C ~ 175°C (TJ) Through Hole
HGTP20N35F3VL

HGTP20N35F3VL

20A, 350V, N-CHANNEL IGBT

Harris Corporation
2,119 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
HGTP20N35F3ULR3935

HGTP20N35F3ULR3935

20A, 350V, N-CHANNEL IGBT

Harris Corporation
800 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RGTH00TS65GC11

RGTH00TS65GC11

IGBT 650V 85A 277W TO-247N

Rohm Semiconductor
2,792 -

RFQ

RGTH00TS65GC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 85 A 200 A 2.1V @ 15V, 50A 277 W - Standard 94 nC 39ns/143ns 400V, 50A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
SGW20N60HS

SGW20N60HS

IGBT, 36A, 600V, N-CHANNEL

Infineon Technologies
2,311 -

RFQ

SGW20N60HS

Ficha técnica

Bulk - Active NPT 600 V 36 A 80 A 3.15V @ 15V, 20A 178 W 690µJ Standard 100 nC 18ns/207ns 400V, 20A, 16Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
HGT1S20N60C3R

HGT1S20N60C3R

40A, 600V, RUGGED N-CHANNEL IGBT

Harris Corporation
580 -

RFQ

HGT1S20N60C3R

Ficha técnica

Bulk - Active - 600 V 40 A 80 A 2.2V @ 15V, 20A 164 W - Standard 116 nC - - - -40°C ~ 150°C (TJ) Through Hole
HGT1S12N60C3DS

HGT1S12N60C3DS

IGBT, 24A, 600V, N-CHANNEL

Fairchild Semiconductor
565 -

RFQ

HGT1S12N60C3DS

Ficha técnica

Bulk - Active - 600 V 24 A 96 A 2.2V @ 15V, 15A 104 W - Standard 71 nC - - 32 ns -40°C ~ 150°C (TJ) Surface Mount
IRGP4062-EPBF

IRGP4062-EPBF

IGBT

International Rectifier
250 -

RFQ

IRGP4062-EPBF

Ficha técnica

Bulk - Active Trench 600 V 48 A 72 A 1.95V @ 15V, 24A 250 W 115µJ (on), 600µJ (off) Standard 75 nC 41ns/104ns 400V, 24A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
HGTG11N120CN

HGTG11N120CN

N-CHANNEL IGBT

Fairchild Semiconductor
971 -

RFQ

HGTG11N120CN

Ficha técnica

Tube - Obsolete NPT 1200 V 43 A 80 A 2.4V @ 15V, 11A 298 W 400µJ (on), 1.3mJ (off) Standard 100 nC 23ns/180ns 960V, 11A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
FGI3236-F085

FGI3236-F085

IGBT, 44A, 350V, N-CHANNEL, TO-2

Fairchild Semiconductor
971 -

RFQ

FGI3236-F085

Ficha técnica

Bulk Automotive, AEC-Q101, EcoSPARK® Active - 360 V 44 A - 1.4V @ 4V, 6A 187 W - Logic 20 nC -/5.4µs 300V, 1kOhm, 5V - -40°C ~ 175°C (TJ) Through Hole
RJP3034DPP-90#T2F

RJP3034DPP-90#T2F

HIGH SPEED IGBT

Renesas Electronics America Inc
500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IGW50N65HS

IGW50N65HS

IGBT WITHOUT ANTI-PARALLEL DIODE

Infineon Technologies
240 -

RFQ

IGW50N65HS

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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