Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
NGP8203N

NGP8203N

IGBT, 20A, 440V, N-CHANNEL

onsemi
3,065 -

RFQ

NGP8203N

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IKA15N65ET6XKSA2

IKA15N65ET6XKSA2

IGBT TRENCH 650V 17A TO220-3FP

Infineon Technologies
231 -

RFQ

IKA15N65ET6XKSA2

Ficha técnica

Tube TrenchStop™ Not For New Designs Trench Field Stop 650 V 17 A 57.5 A 1.9V @ 15V, 11.5A 45 W 230µJ (on), 110µJ (off) Standard 37 nC 30ns/117ns 400V, 11.5A, 47Ohm, 15V 69 ns -40°C ~ 175°C (TJ) Through Hole
HGTP10N40C1

HGTP10N40C1

10A, 400V, N-CHANNEL IGBT

Harris Corporation
2,484 -

RFQ

HGTP10N40C1

Ficha técnica

Bulk - Active - 400 V 10 A 17.5 A 3.2V @ 20V, 17.5A 60 W - Standard 19 nC - - - -55°C ~ 150°C (TJ) Through Hole
IRGB4059DPBF

IRGB4059DPBF

IGBT, 8A I(C), 600V V(BR)CES, N-

International Rectifier
600 -

RFQ

IRGB4059DPBF

Ficha técnica

Bulk - Active Trench 600 V 8 A 16 A 2.05V @ 15V, 4A 56 W 35µJ (on), 75µJ (off) Standard 13 nC 25ns/65ns 400V, 4A, 100Ohm, 15V 55 ns -55°C ~ 175°C (TJ) Through Hole
HGT1S7N60B3D

HGT1S7N60B3D

14A, 600V, N-CHANNEL IGBT

Harris Corporation
400 -

RFQ

HGT1S7N60B3D

Ficha técnica

Bulk - Active - 600 V 14 A 56 A 2.1V @ 15V, 7A 60 W 160µJ (on), 120µJ (off) Standard 30 nC 26ns/130ns 480V, 7A, 50Ohm, 15V 21 ns -55°C ~ 150°C (TJ) Through Hole
STP8057

STP8057

IGBT T0220 SPCL 400V

onsemi
3,225 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FGD3040G2

FGD3040G2

IGBT 400V 41A 150W DPAK

Fairchild Semiconductor
338 -

RFQ

Bulk EcoSPARK® Active - 400 V 41 A - 1.25V @ 4V, 6A 150 W - Logic 21 nC -/4.8µs 300V, 6.5A, 1kOhm, 5V - - Surface Mount
IRGB4615DPBF

IRGB4615DPBF

IGBT WITH RECOVERY DIODE

International Rectifier
2,673 -

RFQ

IRGB4615DPBF

Ficha técnica

Tube - Obsolete - 600 V 23 A 24 A 1.85V @ 15V, 8A 99 W 70µJ (on), 145µJ (off) Standard 19 nC 30ns/95ns 400V, 8A, 47Ohm, 15V 60 ns -40°C ~ 175°C (TJ) Through Hole
IRGB4715DPBF

IRGB4715DPBF

IGBT WITH RECOVERY DIODE

International Rectifier
3,691 -

RFQ

IRGB4715DPBF

Ficha técnica

Tube - Obsolete - 650 V 21 A 24 A 2V @ 15V, 8A 100 W 200µJ (on), 90µJ (off) Standard 30 nC 30ns/100ns 400V, 8A, 50Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
HGT1S7N60C3DS

HGT1S7N60C3DS

14A, 600V, UFS N-CHANNEL IGBT W/

Harris Corporation
2,437 -

RFQ

HGT1S7N60C3DS

Ficha técnica

Bulk - Active - 600 V 14 A 56 A 2V @ 15V, 7A 60 W 165µJ (on), 600µJ (off) Standard 23 nC - 480V, 7A, 50Ohm, 15V 37 ns - Surface Mount
SGP5N60RUFDTU

SGP5N60RUFDTU

N-CHANNEL IGBT

Fairchild Semiconductor
3,110 -

RFQ

SGP5N60RUFDTU

Ficha técnica

Tube - Obsolete - 600 V 8 A 15 A 2.8V @ 15V, 5A 60 W 88µJ (on), 107µJ (off) Standard 16 nC 13ns/34ns 300V, 5A, 40Ohm, 15V 55 ns -55°C ~ 150°C (TJ) Through Hole
AUIRGR4045D

AUIRGR4045D

IGBT, 12A I(C), 600V V(BR)CES, N

International Rectifier
2,238 -

RFQ

AUIRGR4045D

Ficha técnica

Bulk - Active Trench 600 V 12 A 18 A 2V @ 15V, 6A 77 W 56µJ (on), 122µJ (off) Standard 19.5 nC 27ns/75ns 400V, 6A, 47Ohm, 15V 74 ns -55°C ~ 175°C (TJ) Surface Mount
IRGS4715DPBF

IRGS4715DPBF

IGBT WITH RECOVERY DIODE

International Rectifier
3,859 -

RFQ

IRGS4715DPBF

Ficha técnica

Tube - Obsolete - 650 V 21 A 24 A 2V @ 15V, 8A 100 W 200µJ (on), 90µJ (off) Standard 30 nC 30ns/100ns 400V, 8A, 50Ohm, 15V 86 ns -40°C ~ 175°C (TJ) Surface Mount
HGTP12N60C3R

HGTP12N60C3R

24A, 600V N-CHANNEL IGBT

Harris Corporation
2,583 -

RFQ

HGTP12N60C3R

Ficha técnica

Bulk - Active - 600 V 24 A 48 A 2.2V @ 15V, 12A 104 W 400µJ (on), 340µJ (off) Standard 71 nC 37ns/120ns 480V, 12A, 25Ohm, 15V 37 ns -55°C ~ 150°C (TJ) Through Hole
IRGS4615DPBF

IRGS4615DPBF

IGBT WITH RECOVERY DIODE

International Rectifier
711 -

RFQ

IRGS4615DPBF

Ficha técnica

Tube - Obsolete - 600 V 23 A 24 A 1.85V @ 15V, 8A 99 W 70µJ (on), 145µJ (off) Standard 19 nC 30ns/95ns 400V, 8A, 47Ohm, 15V 60 ns -40°C ~ 175°C (TJ) Surface Mount
SGB15N40CLT4

SGB15N40CLT4

IGBT D2PAK SP 400V TR

onsemi
3,336 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NGB8206ANTF4G

NGB8206ANTF4G

IGBT

onsemi
2,930 -

RFQ

NGB8206ANTF4G

Ficha técnica

Bulk - Active - 390 V 20 A 50 A 1.9V @ 4.5V, 20A 150 W - Logic - -/5µs 300V, 9A, 1kOhm, 5V - -55°C ~ 175°C (TJ) Surface Mount
MGB20N36CL

MGB20N36CL

IGBT D2PAK 360V CL

onsemi
734 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SGP13N60UFDTU

SGP13N60UFDTU

N-CHANNEL IGBT

Fairchild Semiconductor
2,644 -

RFQ

SGP13N60UFDTU

Ficha técnica

Tube - Obsolete - 600 V 13 A 52 A 2.6V @ 15V, 6.5A 60 W 85µJ (on), 95µJ (off) Standard 25 nC 20ns/70ns 300V, 6.5A, 50Ohm, 15V 55 ns -55°C ~ 150°C (TJ) Through Hole
IRGSL30B60KPBF

IRGSL30B60KPBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier
2,428 -

RFQ

IRGSL30B60KPBF

Ficha técnica

Bulk - Active NPT 600 V 78 A 120 A 2.35V @ 15V, 30A 370 W 350µJ (on), 825µJ (off) Standard 102 nC 46ns/185ns 400V, 30A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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