Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
RGTH40TS65GC11

RGTH40TS65GC11

IGBT 650V 40A 144W TO-247N

Rohm Semiconductor
2,981 -

RFQ

RGTH40TS65GC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 40 A 80 A 2.1V @ 15V, 20A 144 W - Standard 40 nC 22ns/73ns 400V, 20A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
HGTP20N35G3VL

HGTP20N35G3VL

IGBT, 20A, 320V, N-CHANNEL

Fairchild Semiconductor
326 -

RFQ

HGTP20N35G3VL

Ficha técnica

Bulk - Active - 380 V 20 A - 2.8V @ 5V, 20A 150 W - Logic 28.7 nC - - - -40°C ~ 175°C (TJ) Through Hole
IRG4BC20KD-SPBF

IRG4BC20KD-SPBF

IGBT, 16A I(C), 600V V(BR)CES, N

International Rectifier
2,026 -

RFQ

IRG4BC20KD-SPBF

Ficha técnica

Bulk - Active - 600 V 16 A 32 A 2.8V @ 15V, 9A 60 W 340µJ (on), 300µJ (off) Standard 34 nC 54ns/180ns 480V, 9A, 50Ohm, 15V 37 ns -55°C ~ 150°C (TJ) Surface Mount
73389

73389

TO-263 PKG

Fairchild Semiconductor
2,885 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FGA120N30DTU

FGA120N30DTU

IGBT, 120A, 300V, N-CHANNEL

Fairchild Semiconductor
364 -

RFQ

FGA120N30DTU

Ficha técnica

Tube - Obsolete - 300 V 120 A 300 A 1.4V @ 15V, 25A 290 W - Standard 120 nC - - 21 ns -55°C ~ 150°C (TJ) Through Hole
IRGSL15B60KDPBF

IRGSL15B60KDPBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier
2,348 -

RFQ

IRGSL15B60KDPBF

Ficha técnica

Bulk - Active NPT 600 V 31 A 62 A 2.2V @ 15V, 15A 208 W 220µJ (on), 340µJ (off) Standard 56 nC 34ns/184ns 400V, 15A, 22Ohm, 15V 92 ns -55°C ~ 150°C (TJ) Through Hole
IGT5E10CS

IGT5E10CS

N CHANNEL IGBT FOR SWITCHING APP

Harris Corporation
564 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRGSL15B60KDPBF-INF

IRGSL15B60KDPBF-INF

IGBT W/ULTRAFAST SOFT RECOVERY D

Infineon Technologies
250 -

RFQ

IRGSL15B60KDPBF-INF

Ficha técnica

Bulk - Active NPT 600 V 31 A 62 A 2.2V @ 15V, 15A 208 W 220µJ (on), 340µJ (off) Standard 56 nC 34ns/184ns 400V, 15A, 22Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
HGT1S12N60C3

HGT1S12N60C3

27A, 600V, UFS N-CHANNEL IGBT

Harris Corporation
899 -

RFQ

HGT1S12N60C3

Ficha técnica

Bulk - Active - 600 V 24 A 96 A 2V @ 15V, 12A 104 W - Standard 62 nC - - - -40°C ~ 150°C (TJ) Through Hole
HGT1S12N60C3S9AR4501

HGT1S12N60C3S9AR4501

27A, 600V, UFS N-CHANNEL IGBT

Harris Corporation
3,086 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IGTM10N40

IGTM10N40

N CHANNEL IGBT FOR SWITCHING APP

Harris Corporation
713 -

RFQ

IGTM10N40

Ficha técnica

Bulk - Active - 400 V 10 A - - - - Standard - - - - - Through Hole
HGTP10N40EID

HGTP10N40EID

17.5A, 400V, N-CHANNEL IGBT

Harris Corporation
225 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
CY25CAH-8F-T13#F10

CY25CAH-8F-T13#F10

N-CHANNEL IGBT 400V, 150A

Renesas Electronics America Inc
2,386 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRG4BC20UDSTRRP

IRG4BC20UDSTRRP

ULTRAFAST COPACK IGBTWITH ULTRAF

International Rectifier
2,671 -

RFQ

IRG4BC20UDSTRRP

Ficha técnica

Tube - Active - 600 V 13 A 52 A 2.1V @ 15V, 6.5A 60 W 160µJ (on), 130µJ (off) Standard 27 nC 39ns/93ns 480V, 6.5A, 50Ohm, 15V 37 ns -55°C ~ 150°C (TJ) Surface Mount
IGTM10N40A

IGTM10N40A

N CHANNEL IGBT FOR SWITCHING APP

Harris Corporation
200 -

RFQ

IGTM10N40A

Ficha técnica

Bulk - Active - 400 V 10 A - - - - Standard - - - - - Through Hole
IRGIB6B60KDPBF-INF

IRGIB6B60KDPBF-INF

IGBT W/ULTRAFAST SOFT RECOVERY D

Infineon Technologies
2,196 -

RFQ

IRGIB6B60KDPBF-INF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRG4BC30USTRL

AUIRG4BC30USTRL

IGBT, 23A I(C), 600V V(BR)CES, N

International Rectifier
2,969 -

RFQ

AUIRG4BC30USTRL

Ficha técnica

Bulk - Active - 600 V 23 A 92 A 2.1V @ 15V, 12A 100 W 160µJ (on), 200µJ (off) Standard 50 nC 17ns/78ns 480V, 12A, 23Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
HGTP15N50E1

HGTP15N50E1

15A, 500V, N-CHANNEL IGBT

Harris Corporation
2,256 -

RFQ

HGTP15N50E1

Ficha técnica

Bulk - Active - 500 V 15 A 35 A 3.2V @ 20V, 35A 75 W - Standard 33 nC - - - -55°C ~ 150°C (TJ) Through Hole
HGTP15N40E1

HGTP15N40E1

15A, 400V, N-CHANNEL IGBT

Harris Corporation
488 -

RFQ

HGTP15N40E1

Ficha técnica

Bulk - Active - 400 V 15 A 35 A 3.2V @ 20V, 35A 75 W - Standard 33 nC - - - -55°C ~ 150°C (TJ) Through Hole
GT20N135SRA,S1E

GT20N135SRA,S1E

D-IGBT TO-247 VCES=1350V IC=40A

Toshiba Semiconductor and Storage
3,900 -

RFQ

Tube - Active - 1350 V 40 A 80 A 2.4V @ 15V, 40A 312 W -, 700µJ (off) Standard 185 nC - 300V, 40A, 39Ohm, 15V - 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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