Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IKW20N60H3

IKW20N60H3

IKW20N60 - DISCRETE IGBT WITH AN

Infineon Technologies
2,885 -

RFQ

IKW20N60H3

Ficha técnica

Bulk * Active Trench Field Stop 600 V 40 A 80 A 2.4V @ 15V, 20A 170 W - Standard 120 nC 17ns/194ns 400V, 20A, 14.6Ohm, 15V 112 ns -40°C ~ 175°C (TJ) Through Hole
IKP20N60TA

IKP20N60TA

IKP20N60 - AUTOMOTIVE IGBT DISCR

Infineon Technologies
2,110 -

RFQ

IKP20N60TA

Ficha técnica

Bulk TrenchStop® Active Trench Field Stop 600 V 40 A 60 A 2.1V @ 15V, 20A 156 W 310µJ (on), 460µJ (off) Standard 120 nC 18ns/199ns 400V, 20A, 12Ohm, 15V 41 ns -40°C ~ 150°C (TJ) Through Hole
FGB40N60SM

FGB40N60SM

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
3,895 -

RFQ

FGB40N60SM

Ficha técnica

Bulk - Active Field Stop 600 V 80 A 120 A 2.3V @ 15V, 40A 349 W 870µJ (on), 260µJ (off) Standard 119 nC 12ns/92ns 400V, 40A, 6Ohm, 15V - -55°C ~ 175°C (TJ) Surface Mount
IHW30N60T

IHW30N60T

IHW30N60 - DISCRETE IGBT WITH AN

Infineon Technologies
3,144 -

RFQ

IHW30N60T

Ficha técnica

Bulk * Active Trench Field Stop 600 V 60 A 90 A 2V @ 15V, 30A 187 W - Standard 167 nC 23ns/254ns 400V, 30A, 10.6Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IRG4BC40FPBF

IRG4BC40FPBF

IRG4BC40 - DISCRETE IGBT WITHOUT

Infineon Technologies
2,037 -

RFQ

IRG4BC40FPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IKW30N60T

IKW30N60T

IKW30N60 - DISCRETE IGBT WITH AN

Infineon Technologies
2,752 -

RFQ

IKW30N60T

Ficha técnica

Bulk * Active Trench Field Stop 600 V 45 A 90 A 2.05V @ 15V, 30A 187 W 690µJ (on), 770µJ (off) Standard 167 nC 23ns/254ns 400V, 30A, 10.6Ohm, 15V 143 ns -40°C ~ 175°C (TJ) Through Hole
FGA30T65SHD

FGA30T65SHD

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
3,651 -

RFQ

FGA30T65SHD

Ficha técnica

Bulk - Active Trench Field Stop 650 V 60 A 90 A 2.1V @ 15V, 30A 238 W 598µJ (on), 167µJ (off) Standard 54.7 nC 14.4ns/52.8ns 400V, 30A, 6Ohm, 15V 31.8 ns -55°C ~ 175°C (TJ) Through Hole
IRG7PH35UDPBF

IRG7PH35UDPBF

IRG7PH35 - DISCRETE IGBT WITH AN

Infineon Technologies
3,998 -

RFQ

IRG7PH35UDPBF

Ficha técnica

Bulk - Active Trench 1200 V 50 A 60 A 2.2V @ 15V, 20A 180 W 1.06mJ (on), 620µJ (off) Standard 85 nC 30ns/160ns 600V, 20A, 10Ohm, 15V 105 ns -55°C ~ 150°C (TJ) Through Hole
IKW75N60TXK

IKW75N60TXK

IKW75N60 - DISCRETE IGBT WITH AN

Infineon Technologies
3,036 -

RFQ

IKW75N60TXK

Ficha técnica

Bulk - Active - - - - - - - - - - - - - -
AUIRGPS4070D0

AUIRGPS4070D0

AUIRGPS4070D0 - AUTOMOTIVE IGBT

Infineon Technologies
3,184 -

RFQ

AUIRGPS4070D0

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRGPS66160DPBF

IRGPS66160DPBF

IRGPS66160D - IGBT WITH ULTRAFAS

International Rectifier
2,816 -

RFQ

Bulk - Obsolete - 600 V 240 A 360 A 1.95V @ 15V, 120A 750 W 4.47mJ (on), 3.43mJ (off) Standard 220 nC 80ns/190ns 400V, 120A, 4.7Ohm, 15V 95 ns -40°C ~ 175°C (TJ) Through Hole
STGWA15S120DF3

STGWA15S120DF3

IGBT 1200V 15A TO247-3L

STMicroelectronics
2,526 -

RFQ

STGWA15S120DF3

Ficha técnica

Tube - Active Trench Field Stop 1200 V 30 A 60 A 2.05V @ 15V, 15A 259 W 540µJ (on), 1.38mJ (off) Standard 53 nC 23ns/140ns 600V, 15A, 22Ohm, 15V 270 ns -55°C ~ 175°C (TJ) Through Hole
STGWA60H65DFB

STGWA60H65DFB

IGBT BIPO 650V 60A TO247-3

STMicroelectronics
2,180 -

RFQ

STGWA60H65DFB

Ficha técnica

Tube - Active Trench Field Stop 650 V 80 A 240 A 2V @ 15V, 60A 375 W 1.59mJ (on), 900µJ (off) Standard 306 nC 66ns/210ns 400V, 60A, 10Ohm, 15V 60 ns -55°C ~ 175°C (TJ) Through Hole
IRG4PC40KDPBF

IRG4PC40KDPBF

IGBT 600V 42A 160W TO247AC

Infineon Technologies
3,325 -

RFQ

IRG4PC40KDPBF

Ficha técnica

Bulk,Tube - Obsolete - 600 V 42 A 84 A 2.6V @ 15V, 25A 160 W 950µJ (on), 760µJ (off) Standard 120 nC 53ns/110ns 480V, 25A, 10Ohm, 15V 42 ns -55°C ~ 150°C (TJ) Through Hole
IRG4PH50UPBF

IRG4PH50UPBF

IGBT 1200V 45A 200W TO247AC

Infineon Technologies
2,084 -

RFQ

IRG4PH50UPBF

Ficha técnica

Tray - Obsolete - 1200 V 45 A 180 A 3.7V @ 15V, 24A 200 W 530µJ (on), 1.41mJ (off) Standard 160 nC 35ns/200ns 960V, 24A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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