Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
RJP6065DPE-00#J3

RJP6065DPE-00#J3

IGBT

Renesas Electronics America Inc
3,200 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
HGTP12N6001

HGTP12N6001

HGTP12N6001

Harris Corporation
568 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRGP6630D-EPBF

IRGP6630D-EPBF

IGBT WITH RECOVERY DIODE

International Rectifier
937 -

RFQ

IRGP6630D-EPBF

Ficha técnica

Tube - Obsolete - 600 V 47 A 54 A 1.95V @ 15V, 18A 192 W 75µJ (on), 350µJ (off) Standard 30 nC 40ns/95ns 400V, 18A, 22Ohm, 15V 70 ns -40°C ~ 175°C (TJ) Through Hole
FGA40N60UFDTU

FGA40N60UFDTU

IGBT, 40A, 600V, N-CHANNEL

Fairchild Semiconductor
142 -

RFQ

FGA40N60UFDTU

Ficha técnica

Tube - Obsolete - 600 V 40 A 160 A 3V @ 15V, 20A 160 W 470µJ (on), 130µJ (off) Standard 77 nC 15ns/65ns 300V, 20A, 10Ohm, 15V 95 ns -55°C ~ 150°C (TJ) Through Hole
IRGSL4640DPBF

IRGSL4640DPBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier
800 -

RFQ

IRGSL4640DPBF

Ficha técnica

Bulk - Active - 600 V 65 A 72 A 1.9V @ 15V, 24A 250 W 115µJ (on), 600µJ (off) Standard 75 nC 41ns/104ns 400V, 24A, 10Ohm, 15V 89 ns -55°C ~ 175°C (TJ) Through Hole
HGTH12N40CID

HGTH12N40CID

12A, 400V, N CHANNEL IGBT WITH A

Harris Corporation
3,064 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
HGTH12N50C1D

HGTH12N50C1D

12A, 500V, N-CHANNEL IGBT

Harris Corporation
483 -

RFQ

HGTH12N50C1D

Ficha técnica

Bulk - Active - 500 V 12 A 17.5 A 3.2V @ 20V, 17.5A 75 W - Standard 19 nC - - 100 ns -55°C ~ 150°C (TJ) Through Hole
IHW40T60

IHW40T60

IGBT, 80A, 600V, N-CHANNEL

Infineon Technologies
134 -

RFQ

IHW40T60

Ficha técnica

Bulk TrenchStop® Active Trench Field Stop 600 V 80 A 120 A 2.05V @ 15V, 40A 303 W 920µJ Standard 215 nC -/186ns 400V, 40A, 5.6Ohm, 15V 143 ns -40°C ~ 175°C (TJ) Through Hole
IXYP60N65A5

IXYP60N65A5

IGBT 650V 60A X5 XPT TO-220

IXYS
3,317 -

RFQ

IXYP60N65A5

Ficha técnica

Tube XPT™, GenX5™ Active PT 650 V 134 A 260 A 1.35V @ 15V, 36A 395 W 600µJ (on), 1.45mJ (off) Standard 128 nC 28ns/230ns 400V, 36A, 5Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IHY30N160R2XK

IHY30N160R2XK

IGBT, N-CHANNEL

Infineon Technologies
250 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRGS4640DPBF

IRGS4640DPBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier
350 -

RFQ

Bulk - Active - 600 V 65 A 72 A 1.9V @ 15V, 24A 250 W 115µJ (on), 600µJ (off) Standard 75 nC 41ns/104ns 400V, 24A, 10Ohm, 15V 89 ns -55°C ~ 175°C (TJ) Surface Mount
RGS30TSX2DGC11

RGS30TSX2DGC11

10US SHORT-CIRCUIT TOLERANCE, 12

Rohm Semiconductor
2,091 -

RFQ

RGS30TSX2DGC11

Ficha técnica

Tube - Active Trench Field Stop 1200 V 30 A 45 A 2.1V @ 15V, 15A 267 W 740µJ (on), 600µJ (off) Standard 41 nC 30ns/70ns 600V, 15A, 10Ohm, 15V 157 ns -40°C ~ 175°C (TJ) Through Hole
FGH40T120SQDNL4

FGH40T120SQDNL4

IGBT 1200V 40A UFS FOR SO

onsemi
2,861 -

RFQ

FGH40T120SQDNL4

Ficha técnica

Tube - Active Trench Field Stop 1200 V 160 A 160 A 1.95V @ 15V, 40A 454 W 1.4mJ (on), 1.1mJ (off) Standard 221 nC 46ns/220ns 600V, 40A, 10Ohm, 15V 166 ns -55°C ~ 175°C (TJ) Through Hole
STGW25H120F2

STGW25H120F2

IGBT H-SERIES 1200V 25A TO-247

STMicroelectronics
2,031 -

RFQ

STGW25H120F2

Ficha técnica

Tube - Active Trench Field Stop 1200 V 50 A 100 A 2.6V @ 15V, 25A 375 W 600µJ (on), 700µJ (off) Standard 100 nC 29ns/130ns 600V, 25A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
AIGW50N65F5XKSA1

AIGW50N65F5XKSA1

IGBT 650V TO247-3

Infineon Technologies
2,077 -

RFQ

AIGW50N65F5XKSA1

Ficha técnica

Bulk,Tube Automotive, AEC-Q101, Trenchstop™ 5 Active Trench 650 V - 150 A 2.1V @ 15V, 50A 270 W 490µJ (on), 140µJ (off) Standard 1018 nC 21ns/156ns 400V, 25A, 12Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IGTH20N50

IGTH20N50

N CHANNEL IGBT FOR SWITCHING APP

Harris Corporation
269 -

RFQ

IGTH20N50

Ficha técnica

Bulk - Active - 500 V 20 A - - - - Standard - - - - - Through Hole
MGW12N120D

MGW12N120D

TRANS IGBT CHIP N-CH 1.2KV 20A

onsemi
540 -

RFQ

MGW12N120D

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NTE3300

NTE3300

IGBT-N-CHAN ENHANCEMENT

NTE Electronics, Inc
3,680 -

RFQ

NTE3300

Ficha técnica

Bag - Active - 400 V 10 A 130 A 8V @ 20V, 130A 30 W - Standard - 150ns/450ns - - 150°C (TJ) Through Hole
HGTP10N40C1D

HGTP10N40C1D

17.5A, 400V, N-CHANNEL IGBT

Harris Corporation
206 -

RFQ

HGTP10N40C1D

Ficha técnica

Bulk - Active - 400 V 17.5 A - 3.2V @ 20V, 17.5A 75 W - Standard 19 nC - - - -55°C ~ 150°C (TJ) Through Hole
IRGP4062D-EPBF

IRGP4062D-EPBF

IGBT

International Rectifier
190 -

RFQ

IRGP4062D-EPBF

Ficha técnica

Bulk - Active Trench 600 V 48 A 72 A 1.95V @ 15V, 24A 250 W 115µJ (on), 600µJ (off) Standard 75 nC 41ns/104ns 400V, 24A, 10Ohm, 15V 89 ns -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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