Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
AUIRG4BC30U-S

AUIRG4BC30U-S

IGBT, 23A I(C), 600V V(BR)CES, N

International Rectifier
2,372 -

RFQ

AUIRG4BC30U-S

Ficha técnica

Bulk - Active - 600 V 23 A 92 A 2.1V @ 15V, 12A 100 W 160µJ (on), 200µJ (off) Standard 75 nC 17ns/78ns 480V, 12A, 23Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
IGTM10N50

IGTM10N50

N CHANNEL IGBT FOR SWITCHING APP

Harris Corporation
234 -

RFQ

IGTM10N50

Ficha técnica

Bulk - Active - 500 V 10 A - - - - Standard - - - - - Through Hole
IRG4IBC30WPBF-INF

IRG4IBC30WPBF-INF

COPACK IGBT W/ULTRAFAST SOFT REC

Infineon Technologies
3,093 -

RFQ

IRG4IBC30WPBF-INF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RGTH50TS65GC11

RGTH50TS65GC11

IGBT 650V 50A 174W TO-247N

Rohm Semiconductor
220 -

RFQ

RGTH50TS65GC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 50 A 100 A 2.1V @ 15V, 25A 174 W - Standard 49 nC 27ns/94ns 400V, 25A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IGTM10N50A

IGTM10N50A

N CHANNEL IGBT FOR SWITCHING APP

Harris Corporation
484 -

RFQ

IGTM10N50A

Ficha técnica

Bulk - Active - 500 V 10 A - - - - Standard - - - - - Through Hole
HGT1S20N35F3VLR4505

HGT1S20N35F3VLR4505

40A, 350V, UFS N-CHANNEL IGBT

Harris Corporation
800 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FGA70N30TDTU

FGA70N30TDTU

IGBT, 40A, 300V, N-CHANNEL

Fairchild Semiconductor
660 -

RFQ

FGA70N30TDTU

Ficha técnica

Tube - Obsolete Trench 300 V - 160 A 1.5V @ 15V, 20A 201 W - Standard 125 nC - - 21 ns -55°C ~ 150°C (TJ) Through Hole
SKB15N60

SKB15N60

IGBT, 31A, 600V, N-CHANNEL

Infineon Technologies
304 -

RFQ

SKB15N60

Ficha técnica

Bulk - Active NPT 600 V 31 A 62 A 2.4V @ 15V, 15A 139 W 570µJ Standard 76 nC 32ns/234ns 400V, 15A, 21Ohm, 15V 279 ns -55°C ~ 150°C (TJ) Surface Mount
GT30N135SRA,S1E

GT30N135SRA,S1E

D-IGBT TO-247 VCES=1350V IC=30A

Toshiba Semiconductor and Storage
2,806 -

RFQ

Tube - Active - 1350 V 60 A 120 A 2.6V @ 15V, 60A 348 W -, 1.3mJ (off) Standard 270 nC - 300V, 60A, 39Ohm, 15V - 175°C (TJ) Through Hole
IHW20N135R5XKSA

IHW20N135R5XKSA

REVERSE CONDUCTING IGBT

Infineon Technologies
240 -

RFQ

IHW20N135R5XKSA

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HGT1S3N60A4DS9A

HGT1S3N60A4DS9A

N-CHANNEL IGBT

Fairchild Semiconductor
2,349 -

RFQ

HGT1S3N60A4DS9A

Ficha técnica

Tube - Obsolete - 600 V 17 A 40 A 2.7V @ 15V, 3A 70 W 37µJ (on), 25µJ (off) Standard 21 nC 6ns/73ns 390V, 3A, 50Ohm, 15V 29 ns -55°C ~ 150°C (TJ) Surface Mount
RGTH50TS65DGC11

RGTH50TS65DGC11

IGBT 650V 50A 174W TO-247N

Rohm Semiconductor
188 -

RFQ

RGTH50TS65DGC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 50 A 100 A 2.1V @ 15V, 25A 174 W - Standard 49 nC 27ns/94ns 400V, 25A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
HGTD10N50F1

HGTD10N50F1

10A, 500V N-CHANNEL IGBT

Harris Corporation
2,467 -

RFQ

HGTD10N50F1

Ficha técnica

Bulk - Active - 500 V 12 A - 2.5V @ 10V, 5A 75 W - Standard 13.4 nC - - - -55°C ~ 150°C (TJ) Through Hole
RJP3082DPP-00#T2

RJP3082DPP-00#T2

HIGH SPEED IGBT

Renesas Electronics America Inc
3,288 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IXGP12N120A3

IXGP12N120A3

IGBT 1200V 22A 100W TO220

IXYS
2,279 -

RFQ

IXGP12N120A3

Ficha técnica

Tube GenX3™ Active PT 1200 V 22 A 60 A 3V @ 15V, 12A 100 W - Standard 20.4 nC - - - -55°C ~ 150°C (TJ) Through Hole
RJP3042DPP-00#T2

RJP3042DPP-00#T2

HIGH SPEED IGBT

Renesas Electronics America Inc
3,040 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJH65T14DPQ-A0#T0

RJH65T14DPQ-A0#T0

IGBT TRENCH 650V 100A TO247A

Renesas Electronics America Inc
2,096 -

RFQ

RJH65T14DPQ-A0#T0

Ficha técnica

Tube - Active Trench 650 V 100 A - 1.75V @ 15V, 50A 250 W 1.3mJ (on), 1.2mJ (off) Standard 80 nC 38ns/125ns 400V, 50A, 10Ohm, 15V 250 ns 175°C (TJ) Through Hole
RJP30H1DPP-M1#T2

RJP30H1DPP-M1#T2

IGBT

Renesas Electronics America Inc
3,334 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJP30H1DPP-M9#T2

RJP30H1DPP-M9#T2

IGBT

Renesas Electronics America Inc
3,553 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJP3045DPP-B1#T2F

RJP3045DPP-B1#T2F

HIGH SPEED IGBT

Renesas Electronics America Inc
3,760 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
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1500+ Promedio diario de RFQ
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15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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