Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IRGP6650D-EPBF

IRGP6650D-EPBF

IGBT WITH RECOVERY DIODE

International Rectifier
750 -

RFQ

IRGP6650D-EPBF

Ficha técnica

Tube - Obsolete - 600 V 80 A 105 A 1.95V @ 15V, 35A 306 W 300µJ (on), 630µJ (off) Standard 75 nC 40ns/105ns 400V, 35A, 10Ohm, 15V 50 ns -40°C ~ 175°C (TJ) Through Hole
HGT1S20N60B3S

HGT1S20N60B3S

40A, 600V, UFS N-CHANNEL IGBT

Harris Corporation
635 -

RFQ

HGT1S20N60B3S

Ficha técnica

Bulk - Active - 600 V 40 A - - - - Standard - - - - - Surface Mount
SGH15N120RUFDTU

SGH15N120RUFDTU

IGBT, 24A, 1200V, N-CHANNEL

Fairchild Semiconductor
626 -

RFQ

SGH15N120RUFDTU

Ficha técnica

Bulk - Active - 1200 V 24 A 45 A 3V @ 15V, 15A 180 W - Standard 108 nC 20ns/60ns 600V, 15A, 20Ohm, 15V 100 ns -55°C ~ 150°C (TJ) Through Hole
HGTG27N60C3R

HGTG27N60C3R

54A, 600V, RUGGED N-CHANNEL IGBT

Harris Corporation
297 -

RFQ

HGTG27N60C3R

Ficha técnica

Bulk - Active - 600 V 54 A 108 A 2.2V @ 15V, 27A 208 W - Standard 212 nC - - - -40°C ~ 150°C (TJ) Through Hole
HGTP15N40C1

HGTP15N40C1

15A, 400V, N-CHANNEL IGBT

Harris Corporation
368 -

RFQ

HGTP15N40C1

Ficha técnica

Bulk - Active - 400 V 15 A 35 A 3.2V @ 20V, 35A 75 W - Standard 33 nC - - - -55°C ~ 150°C (TJ) Through Hole
HGTG2ON60C3DR

HGTG2ON60C3DR

40A, 600V, RUGGED UFS SERIES N C

Harris Corporation
302 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IGTH20N40D

IGTH20N40D

N CHANNEL IGBT FOR SWITCHING APP

Harris Corporation
248 -

RFQ

IGTH20N40D

Ficha técnica

Bulk - Active - 400 V 20 A - - - - Standard - - - - - Through Hole
IGTH20N40AD

IGTH20N40AD

N CHANNEL IGBT FOR SWITCHING APP

Harris Corporation
444 -

RFQ

IGTH20N40AD

Ficha técnica

Bulk - Active - 400 V 20 A - - - - Standard - - - - - Through Hole
HGTH20N50E1D

HGTH20N50E1D

20A, 500V, N-CHANNEL IGBT

Harris Corporation
325 -

RFQ

HGTH20N50E1D

Ficha técnica

Bulk - Active - 500 V 20 A 35 A 3.2V @ 20V, 35A 100 W - Standard 33 nC - - - -55°C ~ 150°C (TJ) Through Hole
HGTH20N50E1

HGTH20N50E1

20A, 500V, N-CHANNEL IGBT

Harris Corporation
287 -

RFQ

HGTH20N50E1

Ficha técnica

Bulk - Active - 500 V 20 A 35 A 3.2V @ 20V, 35A 100 W - Standard 33 nC - - - -55°C ~ 150°C (TJ) Through Hole
FGI40N60SFTU

FGI40N60SFTU

IGBT, 80A, 600V, N-CHANNEL

Fairchild Semiconductor
900 -

RFQ

FGI40N60SFTU

Ficha técnica

Tube - Obsolete Field Stop 600 V 80 A 120 A 2.9V @ 15V, 40A 290 W 1.13mJ (on), 310µJ (off) Standard 120 nC 25ns/115ns 400V, 40A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IRGP4063D1PBF

IRGP4063D1PBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier
2,507 -

RFQ

IRGP4063D1PBF

Ficha técnica

Bulk - Active - 600 V 100 A 200 A 2.14V @ 15V, 48A 330 W 1.4µJ (on), 1.1µJ (off) Standard 150 nC 60ns/160ns 400V, 48A, 10Ohm, 15V 80 ns -40°C ~ 175°C (TJ) Through Hole
STGYA50H120DF2

STGYA50H120DF2

TRENCH GATE FIELD-STOP, 1200 V

STMicroelectronics
2,881 -

RFQ

STGYA50H120DF2

Ficha técnica

Tube - Active Trench Field Stop 1200 V 100 A 200 A 2.6V @ 15V, 50A 535 W 2mJ (on), 2.1mJ (off) Standard 210 nC 40ns/284ns 600V, 50A, 10Ohm, 15V 340 ns -55°C ~ 175°C (TJ) Through Hole
IGT6E21

IGT6E21

20A, 500V IGBT FOR MOTOR DRIVE

Harris Corporation
289 -

RFQ

IGT6E21

Ficha técnica

Bulk - Active - 500 V 32 A - - - - Standard - - - - - Through Hole
IGT6D21

IGT6D21

20A, 400V IGBT FOR MOTOR DRIVE

Harris Corporation
209 -

RFQ

IGT6D21

Ficha técnica

Bulk - Active - 400 V 32 A - - - - Standard - - - - - Through Hole
IGT6D20

IGT6D20

20A, 400V IGBT FOR MOTOR DRIVE

Harris Corporation
146 -

RFQ

IGT6D20

Ficha técnica

Bulk - Active - 400 V 32 A - - - - Standard - - - - - Through Hole
TMOSP7052

TMOSP7052

N-CHANNEL IGBT, 41A, 600V

Infineon Technologies
120 -

RFQ

TMOSP7052

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HGTB12N60D1C

HGTB12N60D1C

12A, 600V N-CHANNEL IGBT

Harris Corporation
598 -

RFQ

HGTB12N60D1C

Ficha técnica

Bulk - Active - 600 V 12 A 40 A 2.7V @ 15V, 10A 75 W - Standard - - - - -55°C ~ 150°C (TJ) Through Hole
STGYA50M120DF3

STGYA50M120DF3

TRENCH GATE FIELD-STOP, 1200 V

STMicroelectronics
2,926 -

RFQ

STGYA50M120DF3

Ficha técnica

Tube - Active Trench Field Stop 1200 V 100 A 200 A 2.2V @ 15V, 50A 535 W 2mJ (on), 3.2mJ (off) Standard 194 nC 38ns/258ns 600V, 50A, 10Ohm, 15V 325 ns -55°C ~ 175°C (TJ) Through Hole
IXYH90N65A5

IXYH90N65A5

IGBT 650V 90A X5 XPT TO-247

IXYS
2,639 -

RFQ

IXYH90N65A5

Ficha técnica

Tube XPT™, GenX5™ Active PT 650 V 220 A 600 A 1.35V @ 15V, 60A 650 W 1.3mJ (on), 3.4mJ (off) Standard 260 nC 40ns/420ns 400V, 50A, 5Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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