Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
HGT1S12N60C3R

HGT1S12N60C3R

24A, 600V N-CHANNEL IGBT

Harris Corporation
2,209 -

RFQ

HGT1S12N60C3R

Ficha técnica

Bulk - Active - 600 V 24 A 48 A 2.2V @ 15V, 12A 104 W 400µJ (on), 340µJ (off) Standard 71 nC 37ns/120ns 480V, 12A, 25Ohm, 15V 37 ns -55°C ~ 150°C (TJ) Through Hole
IRG4BC30S-STRLP

IRG4BC30S-STRLP

IGBT

International Rectifier
3,762 -

RFQ

IRG4BC30S-STRLP

Ficha técnica

Bulk - Obsolete - 600 V 34 A 68 A 1.6V @ 15V, 18A 100 W 260µJ (on), 3.45mJ (off) Standard 50 nC 22ns/540ns 480V, 18A, 23Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
ISL9V3036D3S

ISL9V3036D3S

N-CHANNEL IGBT

Fairchild Semiconductor
2,184 -

RFQ

ISL9V3036D3S

Ficha técnica

Tube EcoSPARK® Obsolete - 360 V 21 A - 1.6V @ 4V, 6A 150 W - Logic 17 nC -/4.8µs 300V, 1kOhm, 5V - -40°C ~ 175°C (TJ) Surface Mount
HGT1S12N60C3D

HGT1S12N60C3D

24A, 600V, N-CHANNEL IGBT

Harris Corporation
3,633 -

RFQ

HGT1S12N60C3D

Ficha técnica

Bulk - Active - 600 V 24 A 96 A 2.2V @ 15V, 15A 104 W - Standard 62 nC - - 40 ns -40°C ~ 150°C (TJ) Through Hole
IKW03N120H

IKW03N120H

IGBT WITH ANTI-PARALLEL DIODE

Infineon Technologies
955 -

RFQ

IKW03N120H

Ficha técnica

Bulk - Active - 1200 V 9.6 A 9.9 A 2.8V @ 15V, 3A 62.5 W 140µJ (on), 150µJ (off) Standard 22 nC 9.2ns/281ns 800V, 3A, 82Ohm, 15V 42 ns -40°C ~ 150°C (TJ) Through Hole
SGP20N60HS

SGP20N60HS

IGBT, 36A, 600V, N-CHANNEL

Infineon Technologies
520 -

RFQ

SGP20N60HS

Ficha técnica

Bulk - Active NPT 600 V 36 A 80 A 3.15V @ 15V, 20A 178 W 690µJ Standard 100 nC 18ns/207ns 400V, 20A, 16Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
MGW14N60ED

MGW14N60ED

IGBT, 18A, 600V, N-CHANNEL

onsemi
3,613 -

RFQ

MGW14N60ED

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HGT1S12N60B3

HGT1S12N60B3

27A, 600V, N-CHANNEL IGBT

Harris Corporation
917 -

RFQ

HGT1S12N60B3

Ficha técnica

Bulk - Active - 600 V 27 A 110 A 2.1V @ 15V, 12A 104 W 304µJ (on), 250µJ (off) Standard 68 nC 26ns/150ns 480V, 12A, 25Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
HGT1S12N60B3D

HGT1S12N60B3D

27A, 600V, N-CHANNEL IGBT

Harris Corporation
400 -

RFQ

HGT1S12N60B3D

Ficha técnica

Bulk - Active - 600 V 27 A 110 A 2.1V @ 15V, 12A 104 W 304µJ (on), 250µJ (off) Standard 78 nC 26ns/150ns 480V, 12A, 25Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IRG4BC30WPBF

IRG4BC30WPBF

600V WARP 60-150 KHZ DISCRETE IG

International Rectifier
3,164 -

RFQ

IRG4BC30WPBF

Ficha técnica

Bulk - Active - 600 V 23 A 92 A 2.7V @ 15V, 12A 100 W 130µJ (on), 130µJ (off) Standard 51 nC 25ns/99ns 480V, 12A, 23Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IRG4BC30UPBF

IRG4BC30UPBF

ULTRAFAST SPEED IGBT

International Rectifier
676 -

RFQ

IRG4BC30UPBF

Ficha técnica

Bulk - Active - 600 V 23 A 92 A 2.1V @ 15V, 12A 100 W 160µJ (on), 200µJ (off) Standard 50 nC 17ns/78ns 480V, 12A, 23Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IRG4BC30SPBF

IRG4BC30SPBF

IGBT, 34A I(C), 600V V(BR)CES, N

International Rectifier
2,984 -

RFQ

IRG4BC30SPBF

Ficha técnica

Bulk - Active - 600 V 34 A 68 A 1.6V @ 15V, 18A 100 W 260µJ (on), 3.45mJ (off) Standard 75 nC 22ns/540ns 480V, 18A, 23Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IRG4BC30SPBF-INF

IRG4BC30SPBF-INF

IGBT, 34A I(C), 600V V(BR)CES, N

Infineon Technologies
3,429 -

RFQ

IRG4BC30SPBF-INF

Ficha técnica

Bulk - Active - 600 V 34 A - 1.6V @ 15V, 18A 100 W 260µJ (on), 3.45mJ (off) Standard - 22ns/540ns 480V, 18A, 23Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
ISL9V3036P3

ISL9V3036P3

N-CHANNEL IGBT

Fairchild Semiconductor
2,190 -

RFQ

ISL9V3036P3

Ficha técnica

Tube EcoSPARK® Obsolete - 360 V 21 A - 1.6V @ 4V, 6A 150 W - Logic 17 nC -/4.8µs 300V, 1kOhm, 5V - -40°C ~ 175°C (TJ) Through Hole
HGT1S12N60B3S

HGT1S12N60B3S

27A, 600V, UFS N-CHANNEL IGBT

Harris Corporation
2,663 -

RFQ

HGT1S12N60B3S

Ficha técnica

Bulk - Active - 600 V 27 A 110 A 2.1V @ 15V, 12A 104 W 304µJ (on), 250µJ (off) Standard 68 nC 26ns/150ns 480V, 12A, 25Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
HGT1S12N60B3DS

HGT1S12N60B3DS

27A, 600V, UFS N-CHANNEL IGBT W/

Harris Corporation
2,746 -

RFQ

HGT1S12N60B3DS

Ficha técnica

Bulk - Active - 600 V 27 A 110 A 2.1V @ 15V, 12A 104 W 304µJ (on), 250µJ (off) Standard 78 nC 26ns/150ns 480V, 12A, 25Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
FGPF50N30TTU

FGPF50N30TTU

IGBT, 300V, N-CHANNEL, TO-220AB

Fairchild Semiconductor
800 -

RFQ

FGPF50N30TTU

Ficha técnica

Tube - Obsolete Trench 300 V - 120 A 1.5V @ 15V, 15A 46.8 W - Standard 97 nC - - - -55°C ~ 150°C (TJ) Through Hole
RJP30H1DPD-A0#Q2

RJP30H1DPD-A0#Q2

IGBT

Renesas Electronics America Inc
3,739 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJP4002ASA-00#Q0

RJP4002ASA-00#Q0

IGBT

Renesas Electronics America Inc
2,460 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SKB15N60E8151

SKB15N60E8151

IGBT, 31A, 600V, N-CHANNEL

Infineon Technologies
3,081 -

RFQ

SKB15N60E8151

Ficha técnica

Bulk - Active NPT 600 V 31 A 62 A 2.4V @ 15V, 15A 139 W 570µJ Standard 76 nC 32ns/234ns 400V, 15A, 21Ohm, 15V 279 ns -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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