Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
STB1081SL3G

STB1081SL3G

IGBT D2PAK 350V SPECIAL

onsemi
3,147 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FGPF50N33BTTU

FGPF50N33BTTU

IGBT, 50A, 330V, N-CHANNEL, TO-2

Fairchild Semiconductor
2,679 -

RFQ

FGPF50N33BTTU

Ficha técnica

Bulk - Active Trench 330 V 50 A 160 A 1.5V @ 15V, 20A 43 W - Standard 35 nC - - - - Through Hole
IGTP10N40A

IGTP10N40A

N CHANNEL IGBT FOR SWITCHING APP

Harris Corporation
3,955 -

RFQ

IGTP10N40A

Ficha técnica

Bulk - Active - 400 V 10 A - - - - Standard - - - - - Through Hole
SGR15N40LTM

SGR15N40LTM

IGBT, 400V, N-CHANNEL, TO-252

Fairchild Semiconductor
765 -

RFQ

SGR15N40LTM

Ficha técnica

Bulk - Obsolete Trench 400 V - 130 A 8V @ 4.5V, 130A 45 W - Standard - - - - -40°C ~ 150°C (TJ) Surface Mount
STB1081L3

STB1081L3

TRANS IGBT CHIP N-CH 380V 15A 4P

onsemi
3,738 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRGR4045DPBF

IRGR4045DPBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier
2,827 -

RFQ

IRGR4045DPBF

Ficha técnica

Bulk - Active Trench 600 V 12 A 18 A 2V @ 15V, 6A 77 W 56µJ (on), 122µJ (off) Standard 19.5 nC 27ns/75ns 400V, 6A, 47Ohm, 15V 74 ns -55°C ~ 175°C (TJ) Surface Mount
HGT1S3N60C3D

HGT1S3N60C3D

6A, 600V, N-CHANNEL IGBT

Harris Corporation
365 -

RFQ

HGT1S3N60C3D

Ficha técnica

Bulk - Active - 600 V 6 A 24 A 2V @ 15V, 3A 33 W - Standard 13.8 nC - - - -40°C ~ 150°C (TJ) Through Hole
FGPF30N30TTU

FGPF30N30TTU

IGBT, 300V, N-CHANNEL, TO-220AB

Fairchild Semiconductor
2,918 -

RFQ

FGPF30N30TTU

Ficha técnica

Tube - Obsolete Trench 300 V - 80 A 1.5V @ 15V, 10A 44.6 W - Standard 65 nC 22ns/130ns 200V, 20A, 20Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
FGPF30N30TDTU

FGPF30N30TDTU

IGBT, 300V, N-CHANNEL, TO-220AB

Fairchild Semiconductor
2,111 -

RFQ

FGPF30N30TDTU

Ficha técnica

Tube - Obsolete Trench 300 V - 80 A 1.5V @ 15V, 10A 44.6 W - Standard 65 nC 22ns/130ns 200V, 20A, 20Ohm, 15V 22 ns -55°C ~ 150°C (TJ) Through Hole
HGTD10N40F1S

HGTD10N40F1S

10A, 400V N-CHANNEL IGBT

Harris Corporation
3,799 -

RFQ

HGTD10N40F1S

Ficha técnica

Bulk - Active - 400 V 12 A - 2.5V @ 10V, 5A 75 W - Standard 13.4 nC - - - -55°C ~ 150°C (TJ) Surface Mount
FGPF30N30

FGPF30N30

IGBT, 300V, N-CHANNEL

Fairchild Semiconductor
2,661 -

RFQ

FGPF30N30

Ficha técnica

Tube - Obsolete - 300 V - 80 A 1.5V @ 15V, 10A 46 W - Standard 39 nC - - - -55°C ~ 150°C (TJ) Through Hole
IRGS4607DPBF

IRGS4607DPBF

IGBT WITH RECOVERY DIODE

International Rectifier
850 -

RFQ

IRGS4607DPBF

Ficha técnica

Tube - Obsolete - 600 V 11 A 12 A 2.05V @ 15V, 4A 58 W 140µJ (on), 62µJ (off) Standard 9 nC 27ns/120ns 400V, 4A, 100Ohm, 15V 48 ns -40°C ~ 175°C (TJ) Surface Mount
HGT1S3N60C3DS

HGT1S3N60C3DS

6A, 600V, N-CHANNEL IGBT

Harris Corporation
585 -

RFQ

HGT1S3N60C3DS

Ficha técnica

Bulk - Active - 600 V 6 A - - - - Standard - - - - - Surface Mount
IKU15N60R

IKU15N60R

IGBT, 30A, 600V, N-CHANNEL

Infineon Technologies
3,910 -

RFQ

IKU15N60R

Ficha técnica

Bulk TrenchStop® Active Trench 600 V 30 A 45 A 2.1V @ 15V, 15A 250 W 900µJ Standard 90 nC 16ns/183ns 400V, 15A, 15Ohm, 15V 110 ns -40°C ~ 175°C (TJ) Through Hole
SKP04N60

SKP04N60

IGBT, 9.4A, 600V, N-CHANNEL

Infineon Technologies
3,568 -

RFQ

SKP04N60

Ficha técnica

Bulk - Active NPT 600 V 9.4 A 19 A 2.4V @ 15V, 4A 50 W 131µJ Standard 24 nC 22ns/237ns 400V, 4A, 67Ohm, 15V 180 ns -55°C ~ 150°C (TJ) Through Hole
HGTP10N40F1D

HGTP10N40F1D

12A, 400V, N-CHANNEL IGBT

Harris Corporation
806 -

RFQ

HGTP10N40F1D

Ficha técnica

Bulk - Active - 400 V 12 A 12 A 2.5V @ 10V, 5A 75 W - Standard 13.4 nC - - - -55°C ~ 150°C (TJ) Through Hole
HGT1S7N60B3

HGT1S7N60B3

14A, 600V, N-CHANNEL IGBT

Harris Corporation
400 -

RFQ

HGT1S7N60B3

Ficha técnica

Bulk - Active - 600 V 14 A 56 A 2.1V @ 15V, 7A 60 W 160µJ (on), 120µJ (off) Standard 30 nC 26ns/130ns 480V, 7A, 50Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IRGS6B60KPBF

IRGS6B60KPBF

IGBT, 13A I(C), 600V V(BR)CES, N

International Rectifier
2,107 -

RFQ

Bulk - Active - 600 V 13 A 26 A 2.2V @ 15V, 5A 90 W 110µJ (on), 135µJ (off) Standard 18.2 nC 25ns/215ns 400V, 5A, 100Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
IRGR4045DTRPBF

IRGR4045DTRPBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier
3,832 -

RFQ

IRGR4045DTRPBF

Ficha técnica

Bulk - Active Trench 600 V 12 A 12 A 2V @ 15V, 6A 77 W 56µJ (on), 122µJ (off) Standard 19.5 nC 27ns/75ns 400V, 6A, 47Ohm, 15V 74 ns -55°C ~ 175°C (TJ) Surface Mount
FGPF30N45TTU

FGPF30N45TTU

N-CHANNEL IGBT

Fairchild Semiconductor
2,839 -

RFQ

FGPF30N45TTU

Ficha técnica

Tube - Obsolete Trench 450 V - 120 A 1.6V @ 15V, 20A 50.4 W - Standard 73 nC - - - -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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