Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD60R380E6BTMA1

IPD60R380E6BTMA1

COOLMOS N-CHANNEL POWER MOSFET

International Rectifier
3,624 -

RFQ

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V Super Junction 83W (Tc) -55°C ~ 155°C (TJ) Surface Mount
IRLR2905PBF

IRLR2905PBF

HEXFET POWER MOSFET

International Rectifier
2,097 -

RFQ

IRLR2905PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB59N10DPBF

IRFB59N10DPBF

SMPS HEXFET POWER MOSFET

International Rectifier
3,106 -

RFQ

IRFB59N10DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR15N20DPBF

IRFR15N20DPBF

HEXFET SMPS POWER MOSFET

International Rectifier
3,237 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 10V 165mOhm @ 10A, 10V 5.5V @ 250µA 41 nC @ 10 V ±30V 910 pF @ 25 V - 3W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1010ZS

AUIRF1010ZS

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
2,869 -

RFQ

AUIRF1010ZS

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7530-7PPBF

IRFS7530-7PPBF

MOSFET N-CH 60V 240A D2PAK

International Rectifier
2,555 -

RFQ

IRFS7530-7PPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) - 1.4mOhm @ 100A, 10V 3.7V @ 250µA 354 nC @ 10 V ±20V 12960 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7469PBF

IRF7469PBF

MOSFET

International Rectifier
2,969 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 9A (Ta) 4.5V, 10V 17mOhm @ 9A, 10V 3V @ 250µA 23 nC @ 4.5 V ±20V 2000 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR7807ZPBF

IRLR7807ZPBF

HEXFET POWER MOSFET

International Rectifier
2,685 -

RFQ

IRLR7807ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 43A (Tc) 4.5V, 10V 13.8mOhm @ 15A, 10V 2.25V @ 250µA 11 nC @ 4.5 V ±20V 780 pF @ 15 V - 40W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB61N15DPBF

IRFB61N15DPBF

MOSFET N-CH 150V 60A TO220AB

International Rectifier
2,517 -

RFQ

IRFB61N15DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 60A (Tc) - 32mOhm @ 36A, 10V 5.5V @ 250µA 140 nC @ 10 V ±30V 3470 pF @ 25 V - 2.4W (Ta), 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4115GPBF

IRFB4115GPBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
2,530 -

RFQ

IRFB4115GPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 104A (Tc) 10V 11mOhm @ 62A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5270 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU3103PBF

IRLU3103PBF

MOSFET N-CH 30V 55A IPAK

International Rectifier
3,098 -

RFQ

IRLU3103PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 55A (Tc) - 19mOhm @ 33A, 10V 1V @ 250µA 50 nC @ 4.5 V ±16V 1600 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI7440GPBF

IRFI7440GPBF

IRFI7440 - HEXFET POWER MOSFET

International Rectifier
3,902 -

RFQ

IRFI7440GPBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) 10V 2.5mOhm @ 57A, 10V 3.9V @ 100µA 132 nC @ 10 V ±20V 4549 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF7484QTR

AUIRF7484QTR

AUTOMOTIVE N CHANNEL

International Rectifier
2,227 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta) 7V 10mOhm @ 14A, 7V 2V @ 250µA 100 nC @ 7 V ±8V 3520 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLL3303TRPBF

IRLL3303TRPBF

HEXFET POWER MOSFET

International Rectifier
3,009 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 4.6A (Ta) 4.5V, 10V 31mOhm @ 4.6A, 10V 1V @ 250µA 50 nC @ 10 V ±16V 840 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS3006PBF

IRFS3006PBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
2,366 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF8734PBF

IRF8734PBF

HEXFET POWER MOSFET

International Rectifier
2,800 -

RFQ

IRF8734PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 3.5mOhm @ 21A, 10V 2.35V @ 50µA 30 nC @ 4.5 V ±20V 3175 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFF131

IRFF131

MOSFET N-CH 80V 8A TO205AF

International Rectifier
2,113 -

RFQ

IRFF131

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 8A (Tc) - - - - - - - - - Through Hole
AUIRFS4010

AUIRFS4010

MOSFET N-CH 100V 180A TO263

International Rectifier
2,950 -

RFQ

AUIRFS4010

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) - 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4410ZPBF

IRFS4410ZPBF

MOSFET N-CH 100V 97A TO263-3-2

International Rectifier
3,178 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) - 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6655TRPBF

IRF6655TRPBF

100V 19A DIRECTFET-MV

International Rectifier
3,037 -

RFQ

IRF6655TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 4.2A (Ta), 19A (Tc) 10V 62mOhm @ 5A, 10V 4.8V @ 25µA 11.7 nC @ 10 V ±20V 530 pF @ 25 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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