Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFR3607TRL

AUIRFR3607TRL

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
3,402 -

RFQ

AUIRFR3607TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) - 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V - 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF6218STRL

AUIRF6218STRL

AUTOMOTIVE HEXFET P CHANNEL

International Rectifier
2,325 -

RFQ

AUIRF6218STRL

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 150mOhm @ 16A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 2210 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR5505PBF

IRFR5505PBF

POWER MOSFET

International Rectifier
3,309 -

RFQ

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 10V 110mOhm @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 650 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLZ44ZSPBF

IRLZ44ZSPBF

MOSFET N-CH 55V 51A TO263-3-2

International Rectifier
3,569 -

RFQ

IRLZ44ZSPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) - 13.5mOhm @ 31A, 10V 3V @ 250µA 36 nC @ 5 V ±16V 1620 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3307Z

AUIRFS3307Z

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
3,917 -

RFQ

AUIRFS3307Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 5.8mOhm @ 75A, 10V 4V @ 150µA 110 nC @ 10 V ±20V 4750 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF3808S

AUIRF3808S

MOSFET N-CH 75V 106A D2PAK

International Rectifier
2,644 -

RFQ

AUIRF3808S

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 106A (Tc) - 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7855PBF

IRF7855PBF

MOSFET N-CH 60V 12A 8SO

International Rectifier
2,581 -

RFQ

IRF7855PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) - 9.4mOhm @ 12A, 10V 4.9V @ 100µA 39 nC @ 10 V ±20V 1560 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS3006TRL

AUIRFS3006TRL

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
2,975 -

RFQ

AUIRFS3006TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) - 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V - 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS41N15DTRLP

IRFS41N15DTRLP

HEXFET POWER MOSFET

International Rectifier
3,132 -

RFQ

IRFS41N15DTRLP

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2520 pF @ 25 V - 3.1W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRF7495PBF

IRF7495PBF

HEXFET POWER MOSFET

International Rectifier
2,243 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 7.3A (Ta) 10V 22mOhm @ 4.4A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 1530 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFR3710ZTRL

AUIRFR3710ZTRL

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
3,704 -

RFQ

AUIRFR3710ZTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) - 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V - 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL4310ZPBF

IRFSL4310ZPBF

IRFSL4310 - HEXFET POWER MOSFET

International Rectifier
3,822 -

RFQ

IRFSL4310ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7834TRPBF

IRF7834TRPBF

HEXFET POWER MOSFET

International Rectifier
3,595 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta) 4.5V, 10V 4.5mOhm @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V 3710 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF6898MTRPBF

IRF6898MTRPBF

MOSFET N-CH 25V 40A/214A DIRECT

International Rectifier
3,053 -

RFQ

IRF6898MTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 40A (Ta), 214A (Tc) - 1.1mOhm @ 40A, 10V 2.1V @ 100µA 68 nC @ 4.5 V ±16V 5630 pF @ 13 V Schottky Diode (Body) 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFS3006-7PPBF

IRFS3006-7PPBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
2,175 -

RFQ

IRFS3006-7PPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4310TRRPBF

IRFS4310TRRPBF

MOSFET N-CH 100V 130A TO263-3-2

International Rectifier
3,845 -

RFQ

IRFS4310TRRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) - 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS4010-7TRL

AUIRFS4010-7TRL

MOSFET N-CH 100V 180A TO263

International Rectifier
3,805 -

RFQ

AUIRFS4010-7TRL

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) - 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8743PBF

IRLR8743PBF

IRLR8743 - HEXFET POWER MOSFET

International Rectifier
3,487 -

RFQ

IRLR8743PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 25A, 10V 2.35V @ 100µA 59 nC @ 4.5 V ±20V 4880 pF @ 15 V - 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8408-7P

AUIRFS8408-7P

MOSFET N-CH 40V 195A D2PAK

International Rectifier
2,024 -

RFQ

AUIRFS8408-7P

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) - 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLS3036-7PPBF

IRLS3036-7PPBF

IRLS3036 - HEXFET POWER MOSFET

International Rectifier
3,655 -

RFQ

IRLS3036-7PPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 4.5V, 10V 1.9mOhm @ 180A, 10V 2.5V @ 250µA 160 nC @ 4.5 V ±16V 11270 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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