Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7241PBF

IRF7241PBF

HEXFET POWER MOSFET

International Rectifier
2,546 -

RFQ

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 40 V 6.2A (Ta) 4.5V, 10V 41mOhm @ 6.2A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 3220 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLL014NPBF

IRLL014NPBF

MOSFET N-CH 55V 2A SOT223

International Rectifier
2,331 -

RFQ

IRLL014NPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 2A (Ta) - 140mOhm @ 2A, 10V 2V @ 250µA 14 nC @ 10 V ±16V 230 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR2908TRLPBF

IRLR2908TRLPBF

IRLR2908 - HEXFET POWER MOSFET

International Rectifier
2,017 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Tc) 4.5V, 10V 28mOhm @ 23A, 10V 2.5V @ 250µA 33 nC @ 4.5 V ±16V 1890 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR7807ZTRPBF

IRLR7807ZTRPBF

IRLR7807 - HEXFET POWER MOSFET

International Rectifier
3,415 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 43A (Tc) 4.5V, 10V 13.8mOhm @ 15A, 10V 2.25V @ 250µA 11 nC @ 4.5 V ±20V 780 pF @ 15 V - 40W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7406PBF

IRF7406PBF

AUTOMOTIVE HEXFET P-CHANNEL POWE

International Rectifier
3,793 -

RFQ

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 4.5V, 10V 45mOhm @ 2.8A, 10V 1V @ 250µA 59 nC @ 10 V ±20V 1100 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR3705ZPBF

IRLR3705ZPBF

HEXFET POWER MOSFET

International Rectifier
2,719 -

RFQ

IRLR3705ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7473PBF

IRF7473PBF

HEXFET POWER MOSFET

International Rectifier
2,218 -

RFQ

IRF7473PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 6.9A (Ta) 10V 26mOhm @ 4.1A, 10V 5.5V @ 250µA 61 nC @ 10 V ±20V 3180 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFIZ48NPBF

IRFIZ48NPBF

HEXFET POWER MOSFET

International Rectifier
2,934 -

RFQ

IRFIZ48NPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 40A (Tc) 10V 16mOhm @ 22A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 1900 pF @ 25 V - 54W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP044NPBF

IRFP044NPBF

HEXFET POWER MOSFET

International Rectifier
3,265 -

RFQ

IRFP044NPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 53A (Tc) 10V 20mOhm @ 29A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1500 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS4115PBF

IRFS4115PBF

HEXFET POWER MOSFET

International Rectifier
3,330 -

RFQ

IRFS4115PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 195A (Tc) 10V 12.1mOhm @ 62A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5270 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF8113PBF

IRF8113PBF

HEXFET POWER MOSFET

International Rectifier
2,217 -

RFQ

IRF8113PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 17.2A (Ta) 4.5V, 10V 5.6mOhm @ 17.2A, 10V 2.2V @ 250µA 36 nC @ 4.5 V ±20V 2910 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF8721PBF

IRF8721PBF

MOSFET N-CH 30V 14A 8SO

International Rectifier
3,758 -

RFQ

IRF8721PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) - 8.5mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1040 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF6725MTRPBF

IRF6725MTRPBF

DIRECTFET POWER MOSFET

International Rectifier
2,799 -

RFQ

IRF6725MTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 170A (Tc) 4.5V, 10V 2.2mOhm @ 28A, 10V 2.35V @ 100µA 54 nC @ 4.5 V ±20V 4700 pF @ 15 V - 2.8W (Ta), 100W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRLU9343PBF

IRLU9343PBF

MOSFET P-CH 55V 20A IPAK

International Rectifier
3,422 -

RFQ

IRLU9343PBF

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) - 105mOhm @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V 660 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRLS4030-7PPBF

IRLS4030-7PPBF

IRLS4030 - HEXFET POWER MOSFET

International Rectifier
3,830 -

RFQ

IRLS4030-7PPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 4.5V, 10V 3.9mOhm @ 110A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11490 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44NSPBF

IRFZ44NSPBF

HEXFET POWER MOSFET

International Rectifier
3,891 -

RFQ

IRFZ44NSPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFL024NPBF

IRFL024NPBF

HEXFET POWER MOSFET

International Rectifier
3,870 -

RFQ

IRFL024NPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 2.8A (Ta) 10V 75mOhm @ 2.8A, 10V 4V @ 250µA 18.3 nC @ 10 V ±20V 400 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7832PBF

IRF7832PBF

HEXFET POWER MOSFET

International Rectifier
2,162 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 4mOhm @ 20A, 10V 2.32V @ 250µA 51 nC @ 4.5 V ±20V 4310 pF @ 15 V - 2.5W (Ta) -55°C ~ 155°C (TJ) Surface Mount
AUIRF2907ZS7PTL

AUIRF2907ZS7PTL

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
2,549 -

RFQ

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 180A (Tc) 10V 3.8mOhm @ 110A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7580 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR4620PBF

IRFR4620PBF

PFET, 24A I(D), 200V, 0.078OHM

International Rectifier
3,634 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 78mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ)
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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