Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFU1205PBF

IRFU1205PBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
3,602 -

RFQ

IRFU1205PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 44A (Tc) 10V 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3607TRL701P

IRFU3607TRL701P

HEXFET POWER MOSFET

International Rectifier
2,553 -

RFQ

IRFU3607TRL701P

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLR3110ZTRL

AUIRLR3110ZTRL

MOSFET N-CH 100V 42A DPAK

International Rectifier
3,384 -

RFQ

AUIRLR3110ZTRL

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) - 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3717TRPBF

IRF3717TRPBF

PFET, 20A I(D), 20V, 0.0044OHM

International Rectifier
3,807 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 20A (Ta) 4.5V, 10V 4.4mOhm @ 20A, 10V 2.45V @ 250µA 33 nC @ 4.5 V ±20V 2890 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRF530NSPBF

IRF530NSPBF

HEXFET POWER MOSFET

International Rectifier
2,882 -

RFQ

IRF530NSPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 90mOhm @ 9A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 920 pF @ 25 V - 3.8W (Ta), 70W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF630NSPBF

IRF630NSPBF

HEXFET POWER MOSFET

International Rectifier
2,310 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3007PBF

IRF3007PBF

HEXFET AUTOMOTIVE POWER MOSFET

International Rectifier
2,303 -

RFQ

IRF3007PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 12.6mOhm @ 48A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3270 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR2607ZTRL

AUIRFR2607ZTRL

AUTOMOTIVE POWER MOSFET

International Rectifier
2,655 -

RFQ

AUIRFR2607ZTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 22mOhm @ 30A, 10V 4V @ 50µA 51 nC @ 10 V ±20V 1440 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS4410ZTRL

AUIRFS4410ZTRL

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
3,675 -

RFQ

AUIRFS4410ZTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) - 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V - 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLS3034-7PPBF

IRLS3034-7PPBF

HEXFET POWER MOSFET

International Rectifier
3,122 -

RFQ

IRLS3034-7PPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 4.5V, 10V 1.4mOhm @ 200A, 10V 2.5V @ 250µA 180 nC @ 4.5 V ±20V 10990 pF @ 40 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1324S-7P

AUIRF1324S-7P

MOSFET N-CH 24V 240A TO263-7

International Rectifier
3,788 -

RFQ

AUIRF1324S-7P

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 240A (Tc) - 1mOhm @ 160A, 10V 4V @ 250µA 252 nC @ 10 V ±20V 7700 pF @ 19 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF3710Z

AUIRF3710Z

MOSFET N-CH 100V 59A TO220AB

International Rectifier
3,574 -

RFQ

AUIRF3710Z

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) - 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR1018EPBF

IRFR1018EPBF

MOSFET N-CH 60V 56A DPAK

International Rectifier
3,808 -

RFQ

IRFR1018EPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) - 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR2307Z

AUIRFR2307Z

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
2,178 -

RFQ

AUIRFR2307Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 16mOhm @ 32A, 10V 4V @ 100µA 75 nC @ 10 V ±20V 2190 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR2407TRL

AUIRFR2407TRL

AUTOMOTIVE POWER MOSFET

International Rectifier
3,116 -

RFQ

AUIRFR2407TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) - 26mOhm @ 25A, 10V 4V @ 250µA 110 nC @ 10 V - 2400 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS30067P

AUIRFS30067P

MOSFET N-CH 60V 240A D2PAK

International Rectifier
3,604 -

RFQ

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) - 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU2905ZPBF

IRLU2905ZPBF

POWER FIELD-EFFECT TRANSISTOR, 4

International Rectifier
3,369 -

RFQ

IRLU2905ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 13.5mOhm @ 36A, 10V 3V @ 250µA 35 nC @ 5 V ±16V 1570 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFHM8334TRPBF

IRFHM8334TRPBF

MOSFET N-CH 30V 13A/43A 8PQFN DL

International Rectifier
3,580 -

RFQ

IRFHM8334TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 43A (Tc) - 9mOhm @ 20A, 10V 2.35V @ 25µA 15 nC @ 10 V ±20V 1180 pF @ 10 V - 2.7W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL4310PBF

IRFL4310PBF

MOSFET N-CH 100V 1.6A SOT223

International Rectifier
3,792 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 1.6A (Ta) - 200mOhm @ 1.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR3410PBF

IRFR3410PBF

MOSFET N-CH 100V 31A DPAK

International Rectifier
2,221 -

RFQ

IRFR3410PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) - 39mOhm @ 18A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1690 pF @ 25 V - 3W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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