Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFS3006-7TRL

AUIRFS3006-7TRL

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
3,977 -

RFQ

AUIRFS3006-7TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) - 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V - 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3207Z

AUIRFS3207Z

MOSFET N-CH 75V 120A D2PAK

International Rectifier
2,703 -

RFQ

AUIRFS3207Z

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) - 4.1mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6920 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLR3105TRL

AUIRLR3105TRL

AUTOMOTIVE HEXFET N-CHANNEL

International Rectifier
3,808 -

RFQ

AUIRLR3105TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 25A (Tc) - 37mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V - 710 pF @ 25 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLR3636TRL

AUIRLR3636TRL

AUTOMOTIVE HEXFET N-CHANNEL

International Rectifier
2,292 -

RFQ

AUIRLR3636TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V - 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7452PBF

IRF7452PBF

SMPS HEXFET POWER MOSFET

International Rectifier
3,288 -

RFQ

IRF7452PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 4.5A (Ta) 10V 60mOhm @ 2.7A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 930 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL2505SPBF

IRL2505SPBF

104A, 55V, 0.01OHM, N-CHANNEL MO

International Rectifier
3,855 -

RFQ

IRL2505SPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 104A (Tc) 4V, 10V 8mOhm @ 54A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFN8403TR

AUIRFN8403TR

MOSFET N-CH 40V 95A TDSON-8-10

International Rectifier
3,643 -

RFQ

AUIRFN8403TR

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) - 3.3mOhm @ 50A, 10V 3.9V @ 100µA 98 nC @ 10 V ±20V 3174 pF @ 25 V - 4.3W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
IRFS4127PBF

IRFS4127PBF

HEXFET POWER MOSFET

International Rectifier
3,490 -

RFQ

IRFS4127PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) 10V 22mOhm @ 44A, 10V 5V @ 250µA 150 nC @ 10 V ±20V 5380 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7730-7PPBF

IRFS7730-7PPBF

MOSFET N-CH 75V 240A D2PAK

International Rectifier
2,520 -

RFQ

IRFS7730-7PPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) - 2mOhm @ 100A, 10V 3.7V @ 250µA 428 nC @ 10 V ±20V 13970 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7540PBF

IRFS7540PBF

HEXFET POWER MOSFET

International Rectifier
2,129 -

RFQ

IRFS7540PBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 6V, 10V 5.1mOhm @ 65A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4555 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7537PBF

IRFS7537PBF

HEXFET POWER MOSFET

International Rectifier
3,089 -

RFQ

IRFS7537PBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 173A (Tc) 6V, 10V 3.3mOhm @ 100A, 10V 3.7V @ 150µA 210 nC @ 10 V ±20V 7020 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4410PBF

IRFS4410PBF

MOSFET N-CH 100V 88A TO263-3-2

International Rectifier
3,054 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 88A (Tc) - 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS5615TRLPBF

IRFS5615TRLPBF

IRFS5615 - DIGITAL AUDIO MOSFET

International Rectifier
2,007 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44ESPBF

IRFZ44ESPBF

HEXFET POWER MOSFET

International Rectifier
2,870 -

RFQ

IRFZ44ESPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 23mOhm @ 29A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1360 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7430-7PPBF

IRFS7430-7PPBF

HEXFET POWER MOSFET

International Rectifier
2,329 -

RFQ

IRFS7430-7PPBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 6V, 10V 0.75mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7805PBF

IRF7805PBF

MOSFET N-CH 30V 13A 8SO

International Rectifier
3,036 -

RFQ

IRF7805PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) - 11mOhm @ 7A, 4.5V 3V @ 250µA 31 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLL3303PBF

IRLL3303PBF

MOSFET N-CH 30V 4.6A SOT223

International Rectifier
3,854 -

RFQ

IRLL3303PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 4.6A (Ta) - 31mOhm @ 4.6A, 10V 1V @ 250µA 50 nC @ 10 V ±16V 840 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFBA90N20DPBF

IRFBA90N20DPBF

IRFBA90N20 - SMPS HEXFET

International Rectifier
2,695 -

RFQ

IRFBA90N20DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 98A (Tc) 10V 23mOhm @ 59A, 10V 5V @ 250µA 240 nC @ 10 V ±30V 6080 pF @ 25 V - 650W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6894MTRPBF

IRF6894MTRPBF

25V 999A DIRECTFET-LV

International Rectifier
3,911 -

RFQ

IRF6894MTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 160A (Tc) 4.5V, 10V 1.3mOhm @ 33A, 10V 2.1V @ 100µA 39 nC @ 4.5 V ±16V 4160 pF @ 13 V Schottky Diode (Body) 2.1W (Ta), 54W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFL014NPBF

IRFL014NPBF

MOSFET N-CH 55V 1.9A SOT223

International Rectifier
3,713 -

RFQ

IRFL014NPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 1.9A (Ta) - 160mOhm @ 1.9A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 190 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
Total 781 Record«Prev1... 1112131415161718...40Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario