Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF640NSPBF

IRF640NSPBF

MOSFET N-CH 200V 18A D2PAK

International Rectifier
3,947 -

RFQ

IRF640NSPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) - 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ34NSPBF

IRFZ34NSPBF

MOSFET N-CH 55V 29A D2PAK

International Rectifier
2,698 -

RFQ

IRFZ34NSPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) - 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL530NSPBF

IRL530NSPBF

HEXFET POWER MOSFET

International Rectifier
3,648 -

RFQ

IRL530NSPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 100mOhm @ 9A, 10V 2V @ 250µA 34 nC @ 5 V ±20V 800 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL540NSPBF

IRL540NSPBF

HEXFET POWER MOSFET

International Rectifier
2,147 -

RFQ

IRL540NSPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4V, 10V 44mOhm @ 18A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7450PBF

IRF7450PBF

SMPS HEXFET POWER MOSFET

International Rectifier
2,479 -

RFQ

IRF7450PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 2.5A (Ta) 10V 170mOhm @ 1.5A, 10V 5.5V @ 250µA 39 nC @ 10 V ±30V 940 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7465PBF

IRF7465PBF

SMPS HEXFET POWER MOSFET

International Rectifier
2,778 -

RFQ

IRF7465PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 1.9A (Ta) 10V 280mOhm @ 1.14A, 10V 5.5V @ 250µA 15 nC @ 10 V ±30V 330 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR1205PBF

IRFR1205PBF

HEXFET POWER MOSFET

International Rectifier
3,934 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 44A (Tc) 10V 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR3710Z

AUIRFR3710Z

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
3,759 -

RFQ

AUIRFR3710Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFF9213

IRFF9213

MOSFET N-CH 150V 1.3A TO205AF

International Rectifier
3,586 -

RFQ

IRFF9213

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 1.3A (Tc) - - - - - - - 15W - Through Hole
IRFHM8330TRPBF

IRFHM8330TRPBF

MOSFET N-CH 30V 16A/55A 8PQFN

International Rectifier
2,503 -

RFQ

IRFHM8330TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 55A (Tc) - 6.6mOhm @ 20A, 10V 2.35V @ 25µA 20 nC @ 10 V ±20V 1450 pF @ 25 V - 2.7W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7456PBF

IRF7456PBF

IRF7456 - SMPS HEXFET POWER MOSF

International Rectifier
2,610 -

RFQ

IRF7456PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 16A (Ta) 2.8V, 10V 6.5mOhm @ 16A, 10V 2V @ 250µA 62 nC @ 5 V ±12V 3640 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLL024NPBF

IRLL024NPBF

MOSFET N-CH 55V 3.1A SOT223

International Rectifier
3,145 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 3.1A (Ta) - 65mOhm @ 3.1A, 10V 2V @ 250µA 15.6 nC @ 5 V ±16V 510 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR9120NPBF

IRFR9120NPBF

MOSFET P-CH 100V 6.6A TO252

International Rectifier
2,337 -

RFQ

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 6.6A (Tc) - 480mOhm @ 3.9A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS4010TRRPBF

IRFS4010TRRPBF

HEXFET POWER MOSFET

International Rectifier
2,253 -

RFQ

IRFS4010TRRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8726PBF

IRLR8726PBF

MOSFET N-CH 30V 86A DPAK

International Rectifier
2,503 -

RFQ

IRLR8726PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 86A (Tc) - 5.8mOhm @ 25A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V 2150 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8729PBF

IRLR8729PBF

MOSFET N-CH 30V 58A DPAK

International Rectifier
3,757 -

RFQ

IRLR8729PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) - 8.9mOhm @ 25A, 10V 2.35V @ 25µA 16 nC @ 4.5 V ±20V 1350 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFPS3815PBF

IRFPS3815PBF

PFET, 105A I(D), 150V, 0.015OHM

International Rectifier
3,275 -

RFQ

IRFPS3815PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 15mOhm @ 63A, 10V 5V @ 250µA 390 nC @ 10 V ±30V 6810 pF @ 25 V - 441W (Tc) -55°C ~ 175°C (TJ)
IRFR18N15DPBF

IRFR18N15DPBF

MOSFET N-CH 150V 18A DPAK

International Rectifier
3,178 -

RFQ

IRFR18N15DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) - 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR5305PBF

IRFR5305PBF

AUTOMOTIVE HEXFET P-CHANNEL

International Rectifier
2,796 -

RFQ

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS77347PPBF

IRFS77347PPBF

MOSFET N-CH 75V 197A D2PAK

International Rectifier
3,818 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 197A (Tc) - 3.05mOhm @ 100A, 10V 3.7V @ 250µA 270 nC @ 10 V ±20V 10130 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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