Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFS4310ZPBF

IRFS4310ZPBF

MOSFET N-CH 100V 120A TO263-3-2

International Rectifier
3,698 -

RFQ

IRFS4310ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) - 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFI4228PBF-IR

IRFI4228PBF-IR

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
2,407 -

RFQ

IRFI4228PBF-IR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 34A (Tc) 10V 16mOhm @ 20A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4560 pF @ 25 V - 46W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRFR13N20DPBF-IR

IRFR13N20DPBF-IR

MOSFET N-CH 200V 13A DPAK

International Rectifier
2,856 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 13A (Tc) - 235mOhm @ 8A, 10V 5.5V @ 250µA 38 nC @ 10 V ±30V 830 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR1018E-IR

AUIRFR1018E-IR

PFET, 56A I(D), 60V, 0.0084OHM

International Rectifier
2,843 -

RFQ

AUIRFR1018E-IR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ)
IRF6216PBF-IR

IRF6216PBF-IR

MOSFET P-CH 150V 2.2A 8SO

International Rectifier
2,473 -

RFQ

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 2.2A (Ta) - 240mOhm @ 1.3A, 10V 5V @ 250µA 49 nC @ 10 V ±20V 1280 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFP064N-IR

AUIRFP064N-IR

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
3,324 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 59A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLIZ44NPBF-IR

IRLIZ44NPBF-IR

IRLIZ44N - HEXFET POWER MOSFET

International Rectifier
2,615 -

RFQ

IRLIZ44NPBF-IR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4V, 10V 22mOhm @ 17A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR8103VPBF-IR

IRLR8103VPBF-IR

MOSFET N-CH 30V 91A DPAK

International Rectifier
3,261 -

RFQ

IRLR8103VPBF-IR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 91A (Tc) - 9mOhm @ 15A, 10V 3V @ 250µA 27 nC @ 5 V ±20V 2672 pF @ 16 V - 115W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFHM8342TRPBF-IR

IRFHM8342TRPBF-IR

MOSFET N-CH 30V 10A/28A 8PQFN DL

International Rectifier
2,581 -

RFQ

IRFHM8342TRPBF-IR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 28A (Tc) - 16mOhm @ 17A, 10V 2.35V @ 25µA 10 nC @ 10 V ±20V 560 pF @ 25 V - 2.6W (Ta), 20W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF6218S-IR

AUIRF6218S-IR

PFET, 27A I(D), 150V, 0.15OHM, 1

International Rectifier
3,696 -

RFQ

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 150mOhm @ 16A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 2210 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2804SPBF-IR

IRF2804SPBF-IR

HEXFET POWER MOSFET

International Rectifier
2,997 -

RFQ

IRF2804SPBF-IR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 2mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL8113PBF-IR

IRL8113PBF-IR

HEXFET POWER MOSFET

International Rectifier
3,674 -

RFQ

IRL8113PBF-IR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 105A (Tc) 4.5V, 10V 6mOhm @ 21A, 10V 2.25V @ 250µA 35 nC @ 4.5 V ±20V 2840 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI1010NPBF-IR

IRFI1010NPBF-IR

HEXFET POWER MOSFET

International Rectifier
3,868 -

RFQ

IRFI1010NPBF-IR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 12mOhm @ 26A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2900 pF @ 25 V - 58W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS3004-7P-IR

AUIRFS3004-7P-IR

PFET, 240A I(D), 40V, 0.00125OHM

International Rectifier
2,831 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.25mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9130 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8721TRPBF-IR

IRLR8721TRPBF-IR

HEXFET POWER MOSFET

International Rectifier
2,552 -

RFQ

IRLR8721TRPBF-IR

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFS4310Z-IR

AUIRFS4310Z-IR

MOSFET N-CH 100V 120A D2PAK

International Rectifier
3,786 -

RFQ

AUIRFS4310Z-IR

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) - 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS33N15DTRLP-IR

IRFS33N15DTRLP-IR

MOSFET N-CH 150V 33A TO263-3-2

International Rectifier
2,917 -

RFQ

IRFS33N15DTRLP-IR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) - 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3710STRRPBF-IR

IRF3710STRRPBF-IR

MOSFET N-CH 100V 57A D2PAK

International Rectifier
2,425 -

RFQ

IRF3710STRRPBF-IR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) - 23mOhm @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3130 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR6215TRRPBF-IR

IRFR6215TRRPBF-IR

MOSFET P-CH 150V 13A DPAK

International Rectifier
3,581 -

RFQ

IRFR6215TRRPBF-IR

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) - 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7734PBF

IRFS7734PBF

MOSFET N-CH 75V 183A D2PAK

International Rectifier
3,997 -

RFQ

IRFS7734PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 183A (Tc) - 3.5mOhm @ 100A, 10V 3.7V @ 250µA 270 nC @ 10 V ±20V 10150 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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