Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFIB41N15DPBF

IRFIB41N15DPBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
3,687 -

RFQ

IRFIB41N15DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±20V 2520 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR120ZPBF

IRFR120ZPBF

MOSFET N-CH 100V 8.7A DPAK

International Rectifier
3,298 -

RFQ

IRFR120ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) - 190mOhm @ 5.2A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 310 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF3805L-7P

AUIRF3805L-7P

AUTOMOTIVE N CHANNEL

International Rectifier
3,933 -

RFQ

AUIRF3805L-7P

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 2.6mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7820 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR3607

AUIRFR3607

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
3,866 -

RFQ

AUIRFR3607

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFSL4010

AUIRFSL4010

AUTOMOTIVE POWER MOSFET

International Rectifier
3,533 -

RFQ

AUIRFSL4010

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) - 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V - 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3707ZPBF

IRFU3707ZPBF

IRFU3707 - HEXFET N-CHANNEL

International Rectifier
2,065 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 56A (Tc) 4.5V, 10V 9.5mOhm @ 15A, 10V 2.25V @ 25µA 14 nC @ 4.5 V ±20V 1150 pF @ 15 V - 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1404SPBF

IRL1404SPBF

HEXFET POWER MOSFET

International Rectifier
2,450 -

RFQ

IRL1404SPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLH7134TRPBF

IRLH7134TRPBF

MOSFET N-CH 40V 26A/50A TDSON0

International Rectifier
3,959 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 26A (Ta), 50A (Tc) - 3.3mOhm @ 50A, 10V 2.5V @ 100µA 58 nC @ 4.5 V ±16V 3720 pF @ 25 V - 3.6W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount, Wettable Flank
AUIRFR2607Z

AUIRFR2607Z

AUTOMOTIVE POWER MOSFET

International Rectifier
3,167 -

RFQ

AUIRFR2607Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 22mOhm @ 30A, 10V 4V @ 50µA 51 nC @ 10 V ±20V 1440 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS59N10DTRLP

IRFS59N10DTRLP

MOSFET N-CH 100V 59A TO263-3-2

International Rectifier
2,009 -

RFQ

IRFS59N10DTRLP

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) - 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS59N10DPBF

IRFS59N10DPBF

SMPS HEXFET POWER MOSFET

International Rectifier
2,545 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU6215PBF

IRFU6215PBF

AUTOMOTIVE HEXFET P-CHANNEL

International Rectifier
2,698 -

RFQ

IRFU6215PBF

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7805TRPBF

IRF7805TRPBF

PFET, 30V, 0.011OHM, 1OXIDE SEMI

International Rectifier
3,182 -

RFQ

IRF7805TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V 11mOhm @ 7A, 4.5V 3V @ 250µA 31 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFR1010ZTRL

AUIRFR1010ZTRL

AUTOMOTIVE N CHANNEL

International Rectifier
2,177 -

RFQ

AUIRFR1010ZTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V - 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS31N20DTRLP

IRFS31N20DTRLP

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
2,730 -

RFQ

IRFS31N20DTRLP

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 107 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS31N20DPBF

IRFS31N20DPBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
2,091 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 107 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6621TRPBF

IRF6621TRPBF

30V SINGLE N-CHANNEL HEXFET

International Rectifier
2,268 -

RFQ

IRF6621TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 55A (Tc) 4.5V, 10V 9.1mOhm @ 12A, 10V 2.25V @ 250µA 17.5 nC @ 4.5 V ±20V 1460 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF640NSTRRPBF

IRF640NSTRRPBF

IRF640 - HEXFET POWER MOSFET

International Rectifier
3,067 -

RFQ

IRF640NSTRRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7739L2TRPBF

IRF7739L2TRPBF

DIRECTFET POWER MOSFET

International Rectifier
2,528 -

RFQ

IRF7739L2TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 375A (Tc) 10V 1mOhm @ 160A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 11880 pF @ 25 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7834PBF

IRF7834PBF

MOSFET N-CH 30V 19A 8SO

International Rectifier
3,442 -

RFQ

IRF7834PBF

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta) - 4.5mOhm @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V 3710 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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