Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFPC42

IRFPC42

3.9A, 1000V, 4.2 OHM, N-CHANNEL

Harris Corporation
5,701 -

RFQ

IRFPC42

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 600 V 5.9A (Tc) 10V 1.6Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
R8003KNXC7G

R8003KNXC7G

800V 3A, TO-220FM, HIGH-SPEED SW

Rohm Semiconductor
977 -

RFQ

R8003KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Ta) 10V 1.8Ohm @ 1.5A, 10V 4.5V @ 2mA 11.5 nC @ 10 V ±20V 300 pF @ 100 V - 36W (Tc) 150°C (TJ) Through Hole
RJK6024DPD-00#J2

RJK6024DPD-00#J2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,000 -

RFQ

RJK6024DPD-00#J2

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 400mA (Ta) 10V 42Ohm @ 200mA, 10V - 4.3 nC @ 10 V ±30V 37.5 pF @ 25 V - 27.2W (Tc) 150°C (TJ) Surface Mount
IRFBC40APBF-BE3

IRFBC40APBF-BE3

MOSFET N-CH 600V 6.2A TO220AB

Vishay Siliconix
721 -

RFQ

IRFBC40APBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) - 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STI6N90K5

STI6N90K5

MOSFET N-CH 900V 6A I2PAK

STMicroelectronics
140 -

RFQ

STI6N90K5

Ficha técnica

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 900 V 6A (Tc) 10V 1.1Ohm @ 3A, 10V 5V @ 100µA - ±30V - - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK4085LS-1E

2SK4085LS-1E

MOSFET N-CH 500V 11A TO220F-3FS

Fairchild Semiconductor
1,000 -

RFQ

2SK4085LS-1E

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) - 430mOhm @ 8A, 10V 5V @ 1mA 46.6 nC @ 10 V ±30V 1200 pF @ 30 V - 2W (Ta), 40W (Tc) 150°C Through Hole
2SK4085LS-1E

2SK4085LS-1E

N-CHANNEL SILICON MOSFET

Sanyo
400 -

RFQ

2SK4085LS-1E

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 430mOhm @ 8A, 10V 5V @ 1mA 46.6 nC @ 10 V ±30V 1200 pF @ 30 V - 2W (Ta), 40W (Tc) 150°C Through Hole
2SK1420

2SK1420

N-CHANNEL POWER MOSFET

onsemi
7,532 -

RFQ

2SK1420

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDP10AN06A0

FDP10AN06A0

MOSFET N-CH 60V 12A/75A TO220-3

Fairchild Semiconductor
5,110 -

RFQ

FDP10AN06A0

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta), 75A (Tc) 6V, 10V 10.5mOhm @ 75A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 1840 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6504ENXC7G

R6504ENXC7G

650V 4A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor
1,000 -

RFQ

R6504ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Ta) 10V 1.05Ohm @ 1.5A, 10V 4V @ 130µA 15 nC @ 10 V ±20V 220 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
R6004ENXC7G

R6004ENXC7G

600V 4A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor
1,000 -

RFQ

R6004ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 980mOhm @ 1.5A, 10V 4V @ 1mA 15 nC @ 10 V ±20V 250 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
FQP55N06

FQP55N06

MOSFET N-CH 60V 55A TO220-3

Fairchild Semiconductor
3,427 -

RFQ

FQP55N06

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V 20mOhm @ 27.5A, 10V 4V @ 250µA 46 nC @ 10 V ±25V 1690 pF @ 25 V - 133W (Tc) -55°C ~ 175°C (TJ) Through Hole
R6504KNXC7G

R6504KNXC7G

650V 4A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor
996 -

RFQ

R6504KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Ta) 10V 1.05Ohm @ 1.5A, 10V 5V @ 130µA 10 nC @ 10 V ±20V 270 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
HAT2033RJ01-EL

HAT2033RJ01-EL

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,450 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQI50N06LTU

FQI50N06LTU

MOSFET N-CH 60V 52.4A I2PAK

Fairchild Semiconductor
1,730 -

RFQ

FQI50N06LTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 52.4A (Tc) 5V, 10V 21mOhm @ 26.2A, 10V 2.5V @ 250µA 32 nC @ 5 V ±20V 1630 pF @ 25 V - 3.75W (Ta), 121W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQA7N80

FQA7N80

MOSFET N-CH 800V 7.2A TO3P

Fairchild Semiconductor
780 -

RFQ

FQA7N80

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 7.2A (Tc) 10V 1.5Ohm @ 3.6A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1850 pF @ 25 V - 198W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI12N60TU

FQI12N60TU

MOSFET N-CH 600V 10.5A I2PAK

Fairchild Semiconductor
627 -

RFQ

FQI12N60TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.5A (Tc) 10V 700mOhm @ 5.3A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1900 pF @ 25 V - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S40N10SM

RF1S40N10SM

N-CHANNEL POWER MOSFET

Harris Corporation
3,245 -

RFQ

RF1S40N10SM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 40A - - - - - - - - - Surface Mount
IRFPC40

IRFPC40

6.8A 600V 1.200 OHM N-CHANNEL

Harris Corporation
968 -

RFQ

IRFPC40

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 1.2Ohm @ 4.1A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFB4410-IR

AUIRFB4410-IR

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
3,108 -

RFQ

AUIRFB4410-IR

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
Total 42446 Record«Prev1... 5758596061626364...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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