Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPAN60R180P7SXKSA1

IPAN60R180P7SXKSA1

MOSFET 600V TO220 FULL PACK

Infineon Technologies
500 -

RFQ

Tube CoolMOS™ Active - - 600 V 18A (Tc) - - - - - - - - - Through Hole
IRFBF20PBF-BE3

IRFBF20PBF-BE3

MOSFET N-CH 900V 1.7A TO220AB

Vishay Siliconix
975 -

RFQ

IRFBF20PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) - 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP6N80E-BE3

SIHP6N80E-BE3

N-CHANNEL 800V

Vishay Siliconix
1,000 -

RFQ

SIHP6N80E-BE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDU6688

FDU6688

MOSFET N-CH 30V 84A IPAK

Fairchild Semiconductor
8,025 -

RFQ

FDU6688

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 84A (Ta) 4.5V, 10V 5mOhm @ 18A, 10V 3V @ 250µA 56 nC @ 5 V ±20V 3845 pF @ 15 V - 83W (Ta) -55°C ~ 175°C (TJ) Through Hole
H7N1004FN-E-A9#B0F

H7N1004FN-E-A9#B0F

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
7,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQB12N60TM

FQB12N60TM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
6,990 -

RFQ

FQB12N60TM

Ficha técnica

Bulk QFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 10.5A (Tc) 10V 700mOhm @ 5.3A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1900 pF @ 25 V - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD6688S

FDD6688S

MOSFET N-CH 30V 88A DPAK

Fairchild Semiconductor
6,966 -

RFQ

FDD6688S

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 88A (Ta) 4.5V, 10V 5.1mOhm @ 18.5A, 10V 3V @ 1mA 81 nC @ 10 V ±20V 3290 pF @ 15 V - 69W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDZ7064N

FDZ7064N

MOSFET N-CH 30V 13.5A 30BGA

Fairchild Semiconductor
6,000 -

RFQ

FDZ7064N

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta) 4.5V, 10V 7mOhm @ 14.5A, 10V 2V @ 250µA 43 nC @ 4.5 V ±12V 3843 pF @ 15 V - 2.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTPF450N80S3Z

NTPF450N80S3Z

MOSFET N-CH 800V 11A TO220-3

onsemi
958 -

RFQ

NTPF450N80S3Z

Ficha técnica

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tj) - 450mOhm @ 5.5A, 10V 3.8V @ 240µA 19.3 nC @ 10 V ±20V 885 pF @ 400 V - 29.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK0392DPA-WS#J53

RJK0392DPA-WS#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics America Inc
2,150 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK3367-Z-E2-AZ

2SK3367-Z-E2-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
2,000 -

RFQ

2SK3367-Z-E2-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK0348DPA-WS#J0

RJK0348DPA-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK3367-AZ

2SK3367-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
753 -

RFQ

2SK3367-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQA34N20L

FQA34N20L

MOSFET N-CH 200V 34A TO3P

Fairchild Semiconductor
669 -

RFQ

FQA34N20L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 34A (Tc) 5V, 10V 75mOhm @ 17A, 10V 2V @ 250µA 72 nC @ 5 V ±20V 3900 pF @ 25 V - 210W (Tc) -55°C ~ 150°C (TJ) Through Hole
RX3G07CGNC16

RX3G07CGNC16

MOSFET N-CH 40V 70A TO220AB

Rohm Semiconductor
877 -

RFQ

RX3G07CGNC16

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) - 4.7mOhm @ 70A, 10V 2.5V @ 500µA 32 nC @ 10 V ±20V 2410 pF @ 20 V - 78W (Tc) 150°C (TJ) Through Hole
FDB8160-F085

FDB8160-F085

80A, 30V, 0.0018OHM, N-CHANNEL

Fairchild Semiconductor
9,581 -

RFQ

FDB8160-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 1.8mOhm @ 80A, 10V 4V @ 250µA 243 nC @ 10 V ±20V 11825 pF @ 15 V - 254W (Tc) -55°C ~ 175°C (TJ)
AUIRFS8408TRR

AUIRFS8408TRR

MOSFET N-CH 40V 195A D2PAK

International Rectifier
490 -

RFQ

AUIRFS8408TRR

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) - 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8408

AUIRFS8408

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
268 -

RFQ

AUIRFS8408

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STU8N80K5

STU8N80K5

MOSFET N-CH 800V 6A TO251

STMicroelectronics
498 -

RFQ

STU8N80K5

Ficha técnica

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 950mOhm @ 3A, 10V 5V @ 100µA 16.5 nC @ 10 V ±30V 450 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ133-Z-E1-AZ

2SJ133-Z-E1-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
5,868 -

RFQ

2SJ133-Z-E1-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
Total 42446 Record«Prev1... 5657585960616263...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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