Rohm Semiconductor R6504ENXC7G

Número de parte
R6504ENXC7G
Fabricante
Rohm Semiconductor
Categoría:
Transistoren – FETs, MOSFETs – Einzeltransistoren
Paquete
TO-220FM
Ficha técnica
Fudong Communication (Shenzhen) Grupo Co., Ltd.R6504ENXC7G.pdf
Descripción
650V 4A TO-220FM, LOW-NOISE POWE
Cantidad

Precio unitario$0

Precio total$0

Pago
payment
Envío
payment

Product details

1. How to order R6504ENXC7G on Fudong Communication (Shenzhen) Grupo Co., Ltd.?

Currently, Fudong Communication (Shenzhen) Grupo Co., Ltd. only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Fudong Communication (Shenzhen) Grupo Co., Ltd. guarantee that R6504ENXC7G is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the R6504ENXC7G. All suppliers must pass our qualification reviews before they can publish their products including R6504ENXC7G on Fudong Communication (Shenzhen) Grupo Co., Ltd.; we pay more attention to the channels and quality of R6504ENXC7G products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the R6504ENXC7G price and inventory displayed accurate?

The price and inventory of R6504ENXC7G fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of R6504ENXC7G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the R6504ENXC7G we delivered, we will accept the replacement or return of the R6504ENXC7G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of R6504ENXC7G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as R6504ENXC7G pin diagram, R6504ENXC7G datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Imagen R8002ANJGTL R8002KNXC7G RCJ331N25TL RCJ451N20TL RX3G07CGNC16
Número de parte R8002ANJGTL R8002KNXC7G RCJ331N25TL RCJ451N20TL RX3G07CGNC16
Fabricante Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Packaging Tube Tube Tube Tube Tube
Series - - - - -
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V 650 V 650 V 650 V 650 V
Current-ContinuousDrain(Id)@25°C 4A (Ta) 4A (Ta) 4A (Ta) 4A (Ta) 4A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 1.05Ohm @ 1.5A, 10V 1.05Ohm @ 1.5A, 10V 1.05Ohm @ 1.5A, 10V 1.05Ohm @ 1.5A, 10V 1.05Ohm @ 1.5A, 10V
Vgs(th)(Max)@Id 4V @ 130µA 4V @ 130µA 4V @ 130µA 4V @ 130µA 4V @ 130µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 10 V 15 nC @ 10 V 15 nC @ 10 V 15 nC @ 10 V 15 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 220 pF @ 25 V 220 pF @ 25 V 220 pF @ 25 V 220 pF @ 25 V 220 pF @ 25 V
FETFeature - - - - -
PowerDissipation(Max) 40W (Tc) 40W (Tc) 40W (Tc) 40W (Tc) 40W (Tc)
OperatingTemperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

R6504ENXC7G Información relevante

Las siguientes partes están incluidas "R6504ENXC7G" ISSI, soluciones integradas de silicio, Inc. R6504ENXC7G.

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