Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTP90N055T2

IXTP90N055T2

MOSFET N-CH 55V 90A TO220AB

IXYS
3,396 -

RFQ

IXTP90N055T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 90A (Tc) 10V 8.4mOhm @ 25A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 2770 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB42N20DPBF

IRFB42N20DPBF

CHANNEL

International Rectifier
1,150 -

RFQ

IRFB42N20DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 44A (Tc) 10V 55mOhm @ 26A, 10V 5.5V @ 250µA 140 nC @ 10 V ±30V 3430 pF @ 25 V - 2.4W (Ta), 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFS8403TRR

AUIRFS8403TRR

MOSFET N-CH 40V 123A D2PAK

International Rectifier
800 -

RFQ

AUIRFS8403TRR

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 123A (Tc) - 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP06CN10LG

IPP06CN10LG

N-CHANNEL POWER MOSFET

Infineon Technologies
490 -

RFQ

IPP06CN10LG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
TPIC2202KC

TPIC2202KC

N-CHANNEL POWER MOSFET

Texas Instruments
5,494 -

RFQ

TPIC2202KC

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDZ208P

FDZ208P

MOSFET P-CH 30V 12.5A 30BGA

Fairchild Semiconductor
5,403 -

RFQ

FDZ208P

Ficha técnica

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4.5V, 10V 10.5mOhm @ 12.5A, 10V 3V @ 250µA 35 nC @ 5 V ±25V 2409 pF @ 15 V - 2.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP60R385CP

IPP60R385CP

MOSFET N-CH 600V 9A TO220-3-1

Infineon Technologies
525 -

RFQ

IPP60R385CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) - 385mOhm @ 5.2A, 10V 3.5V @ 340µA 22 nC @ 10 V ±20V 790 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFR4104TRL

AUIRFR4104TRL

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
4,448 -

RFQ

AUIRFR4104TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) - 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V - 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN3R3-80ES,127

PSMN3R3-80ES,127

ELEMENT, NCHANNEL, SILICON, MOSF

NXP USA Inc.
1,415 -

RFQ

PSMN3R3-80ES,127

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.3mOhm @ 25A, 10V 4V @ 1mA 139 nC @ 10 V ±20V 9961 pF @ 40 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK3114-S17-AZ

2SK3114-S17-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
1,000 -

RFQ

2SK3114-S17-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFP341

IRFP341

N-CHANNEL POWER MOSFET

Harris Corporation
233 -

RFQ

IRFP341

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 11A (Tc) 10V 550mOhm @ 5.5A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1250 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK0379DPA-00#J53

RJK0379DPA-00#J53

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
9,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUZ41A

BUZ41A

N-CHANNEL POWER MOSFET

Harris Corporation
7,258 -

RFQ

BUZ41A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.5A, 10V 4V @ 1mA - ±20V 2000 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK0390DPA-00#J5A

RJK0390DPA-00#J5A

MOSFET N-CH 30V 65A 8WPAK

Renesas Electronics America Inc
6,000 -

RFQ

RJK0390DPA-00#J5A

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 65A (Ta) - 2.2mOhm @ 32.5A, 10V - 54 nC @ 4.5 V - 8900 pF @ 10 V - 60W (Tc) 150°C (TJ) Surface Mount
RJK0390DPA-WS#J53

RJK0390DPA-WS#J53

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
5,858 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RFP70N03

RFP70N03

MOSFET N-CH 30V 70A TO220-3

Harris Corporation
5,567 -

RFQ

RFP70N03

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) - 10mOhm @ 70A, 10V 4V @ 250µA 260 nC @ 20 V - 3300 pF @ 25 V - - - Through Hole
RJK0391DPA-WS#J53

RJK0391DPA-WS#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics America Inc
3,940 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUK7C06-40AITE,118

BUK7C06-40AITE,118

MOSFET N-CH 40V 75A D2PAK

NXP USA Inc.
3,200 -

RFQ

BUK7C06-40AITE,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 6mOhm @ 50A, 10V 4V @ 1mA 120 nC @ 10 V ±20V 4300 pF @ 25 V Current Sensing 272W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK2736-E

2SK2736-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,081 -

RFQ

2SK2736-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK0379DPA-00#J5A

RJK0379DPA-00#J5A

MOSFET N-CH 30V 50A 8WPAK

Renesas Electronics America Inc
3,000 -

RFQ

RJK0379DPA-00#J5A

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Ta) - 2.3mOhm @ 25A, 10V - 37 nC @ 4.5 V - 5150 pF @ 10 V - 55W (Tc) 150°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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