Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RJK03P7DPA-WS#J5A

RJK03P7DPA-WS#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,950 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK03P9DPA-WS#J5A

RJK03P9DPA-WS#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,900 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FCPF11N65

FCPF11N65

TRANS MOSFET N-CH 600V 11A 3PIN(

Fairchild Semiconductor
1,315 -

RFQ

Bulk SuperFET™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) - 380mOhm @ 5.5A, 10V 5V @ 250µA 52 nC @ 10 V - 1490 pF @ 25 V - 36W (Tc) - Through Hole
2SK2869-91L

2SK2869-91L

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,271 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQAF7N90

FQAF7N90

MOSFET N-CH 900V 5.2A TO3PF

Fairchild Semiconductor
877 -

RFQ

FQAF7N90

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.2A (Tc) 10V 1.55Ohm @ 2.6A, 10V 5V @ 250µA 59 nC @ 10 V ±30V 2280 pF @ 25 V - 107W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75542S3S

HUF75542S3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
400 -

RFQ

HUF75542S3S

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 10V 14mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 20 V ±20V 2750 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF76443S3ST

HUF76443S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
800 -

RFQ

HUF76443S3ST

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 8mOhm @ 75A, 10V 3V @ 250µA 129 nC @ 10 V ±16V 4115 pF @ 25 V - 260W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF241

IRF241

MOSFET N-CH 150V 18A TO204AE

International Rectifier
370 -

RFQ

IRF241

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) - - - - - - - 125W - Through Hole
IRF143

IRF143

MOSFET N-CH 60V 24A TO3

International Rectifier
203 -

RFQ

IRF143

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Tc) - 110mOhm @ 15A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1600 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK0230DPA-WS#J5A

RJK0230DPA-WS#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,920 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
PSMN1R9-40PL127

PSMN1R9-40PL127

N-CHANNEL POWER MOSFET

NXP USA Inc.
2,255 -

RFQ

PSMN1R9-40PL127

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK0379DPA-WS#J53

RJK0379DPA-WS#J53

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,700 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SJ687-ZK-E2-AY

2SJ687-ZK-E2-AY

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

2SJ687-ZK-E2-AY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HUF75637S3ST

HUF75637S3ST

MOSFET N-CH 100V 44A D2PAK

Fairchild Semiconductor
1,429 -

RFQ

HUF75637S3ST

Ficha técnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 10V 30mOhm @ 44A, 10V 4V @ 250µA 108 nC @ 20 V ±20V 1700 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP2N65X2

IXTP2N65X2

MOSFET N-CH 650V 2A TO220

IXYS
298 -

RFQ

IXTP2N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 2A (Tc) 10V 2.3Ohm @ 1A, 10V 5V @ 250µA 4.3 nC @ 10 V ±30V 180 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF731

IRF731

N-CHANNEL POWER MOSFET

Harris Corporation
4,369 -

RFQ

IRF731

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 5.5A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP340

IRFP340

MOSFET N-CH 400V 11A TO247-3

Harris Corporation
1,224 -

RFQ

IRFP340

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 11A (Tc) 10V 550mOhm @ 6.6A, 10V 4V @ 250µA 62 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI60R280C6

IPI60R280C6

MOSFET N-CH 600V 13.8A TO262-3

Infineon Technologies
1,083 -

RFQ

IPI60R280C6

Ficha técnica

Bulk CoolMOS™ C6 Active N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) - 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP12N60E-BE3

SIHP12N60E-BE3

MOSFET N-CH 600V 12A TO220AB

Vishay Siliconix
994 -

RFQ

SIHP12N60E-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) - 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI072N10N3 G

IPI072N10N3 G

N-CHANNEL POWER MOSFET

Infineon Technologies
1,000 -

RFQ

IPI072N10N3 G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
Total 42446 Record«Prev1... 5960616263646566...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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