Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUF75344A3

HUF75344A3

MOSFET N-CH 55V 75A TO3P

Fairchild Semiconductor
616 -

RFQ

HUF75344A3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 208 nC @ 20 V ±20V 4855 pF @ 25 V - 288.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP040N08NF2SAKMA1

IPP040N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies
870 -

RFQ

IPP040N08NF2SAKMA1

Ficha técnica

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 80 V 22A (Ta), 115A (Tc) 6V, 10V 4mOhm @ 80A, 10V 3.8V @ 85µA 81 nC @ 10 V ±20V 3800 pF @ 40 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP1N100P

IXTP1N100P

MOSFET N-CH 1000V 1A TO220AB

IXYS
590 -

RFQ

IXTP1N100P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 1A (Tc) 10V 15Ohm @ 500mA, 10V 4.5V @ 50µA 15.5 nC @ 10 V ±20V 331 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA10N80C

FQA10N80C

MOSFET N-CH 800V 10A TO3P

Fairchild Semiconductor
7,600 -

RFQ

FQA10N80C

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 1.1Ohm @ 5A, 10V 5V @ 250µA 58 nC @ 10 V ±30V 2800 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP08N100P

IXTP08N100P

MOSFET N-CH 1000V 800MA TO220AB

IXYS
287 -

RFQ

IXTP08N100P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 800mA (Tc) 10V 20Ohm @ 500mA, 10V 4V @ 50µA 11.3 nC @ 10 V ±20V 240 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S640

RF1S640

18A, 200V, 0.180 OHM, N-CHANNEL

Harris Corporation
3,985 -

RFQ

RF1S640

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTPF250N65S3H

NTPF250N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
1,000 -

RFQ

NTPF250N65S3H

Ficha técnica

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 13A (Tj) 10V 250mOhm @ 6.5A, 10V 4V @ 1.1mA 24 nC @ 10 V ±30V 1261 pF @ 400 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6006KNXC7G

R6006KNXC7G

600V 6A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor
997 -

RFQ

R6006KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Ta) 10V 830mOhm @ 3A, 10V 5.5V @ 1mA 12 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
AUIRF3415

AUIRF3415

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
564 -

RFQ

AUIRF3415

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2400 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK3659-AZ

2SK3659-AZ

MOSFET N-CH 20V 65A TO220-3

Renesas Electronics America Inc
1,772 -

RFQ

2SK3659-AZ

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 65A (Tc) - 5.7mOhm @ 40A, 10V 2.5V @ 1mA 32 nC @ 10 V - 1700 pF @ 10 V - - - Through Hole
RFG40N10

RFG40N10

MOSFET N-CH 100V 40A TO247-3

Fairchild Semiconductor
1,560 -

RFQ

RFG40N10

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 40mOhm @ 40A, 10V 4V @ 250µA 300 nC @ 20 V ±20V - - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ40PBF-BE3

IRFZ40PBF-BE3

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
766 -

RFQ

IRFZ40PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFD323

IRFD323

N-CHANNEL POWER MOSFET

Harris Corporation
982 -

RFQ

IRFD323

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 400mA (Tc) 10V 2.5Ohm @ 250mA, 10V 4V @ 250µA 15 nC @ 10 V ±20V 455 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6009ENXC7G

R6009ENXC7G

600V 9A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor
1,000 -

RFQ

R6009ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Ta) 10V 535mOhm @ 2.8A, 10V 4V @ 1mA 23 nC @ 10 V ±20V 430 pF @ 25 V - 48W (Tc) 150°C (TJ) Through Hole
R6509ENXC7G

R6509ENXC7G

650V 9A TO-220FM, LOW-NOISE POWE

Rohm Semiconductor
1,000 -

RFQ

R6509ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Ta) 10V 585mOhm @ 2.8A, 10V 4V @ 230µA 24 nC @ 10 V ±20V 430 pF @ 25 V - 48W (Tc) 150°C (TJ) Through Hole
R6009KNXC7G

R6009KNXC7G

600V 9A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor
1,000 -

RFQ

R6009KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Ta) 10V 535mOhm @ 2.8A, 10V 5V @ 1mA 16.5 nC @ 10 V ±20V 540 pF @ 25 V - 48W (Tc) 150°C (TJ) Through Hole
IRFZ44RPBF-BE3

IRFZ44RPBF-BE3

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
966 -

RFQ

IRFZ44RPBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76445S3ST

HUF76445S3ST

MOSFET N-CH 60V 75A D2PAK

Fairchild Semiconductor
385 -

RFQ

HUF76445S3ST

Ficha técnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 6.5mOhm @ 75A, 10V 3V @ 250µA 150 nC @ 10 V ±16V 4965 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK190E65Z,S1X

TK190E65Z,S1X

650V DTMOS VI TO-220 190MOHM

Toshiba Semiconductor and Storage
200 -

RFQ

TK190E65Z,S1X

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 130W (Tc) 150°C Through Hole
HUF75343S3_NL

HUF75343S3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
360 -

RFQ

HUF75343S3_NL

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 75A, 10V 4V @ 250µA 205 nC @ 20 V ±20V 3000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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