Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RJK03M0DPA-WS#J5A

RJK03M0DPA-WS#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,120 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NTD6N40-001-MO

NTD6N40-001-MO

NFET DPAK 400V 1.1R

Motorola
400 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
AUIRF3007

AUIRF3007

MOSFET N-CH 75V 75A TO220AB

International Rectifier
9,800 -

RFQ

AUIRF3007

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 12.6mOhm @ 48A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3270 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI60R299CP

IPI60R299CP

N-CHANNEL POWER MOSFET

Infineon Technologies
8,500 -

RFQ

IPI60R299CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP055N08NF2SAKMA1

IPP055N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies
607 -

RFQ

IPP055N08NF2SAKMA1

Ficha técnica

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 80 V 18.5A (Ta), 99A (Tc) 6V, 10V 5.5mOhm @ 60A, 10V 3.8V @ 55µA 54 nC @ 10 V ±20V 2500 pF @ 40 V - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF13N50C-ON

FQPF13N50C-ON

MOSFET N-CH 500V 13A TO220-3

onsemi
6,476 -

RFQ

FQPF13N50C-ON

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) - 480mOhm @ 6.5A, 10V 4V @ 250µA 56 nC @ 10 V ±30V 2055 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTB6N60T4

NTB6N60T4

N-CHANNEL POWER MOSFET

Motorola
6,400 -

RFQ

NTB6N60T4

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
TK3R3E08QM,S1X

TK3R3E08QM,S1X

UMOS10 TO-220AB 80V 3.3MOHM

Toshiba Semiconductor and Storage
3,433 -

RFQ

TK3R3E08QM,S1X

Ficha técnica

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 3.3mOhm @ 50A, 10V 3.5V @ 1.3mA 110 nC @ 10 V ±20V 7670 pF @ 40 V - 230W (Tc) 175°C Through Hole
RF1S9640

RF1S9640

MOSFET P-CH 200V 11A TO220AB

Harris Corporation
4,500 -

RFQ

RF1S9640

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) - 500mOhm @ 6A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF831

IRF831

N-CHANNEL POWER MOSFET

Harris Corporation
1,610 -

RFQ

IRF831

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 4.5A (Tc) 10V 1.5Ohm @ 2.5A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB70N08TM

FQB70N08TM

MOSFET N-CH 80V 70A D2PAK

Fairchild Semiconductor
1,180 -

RFQ

FQB70N08TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 10V 17mOhm @ 35A, 10V 4V @ 250µA 98 nC @ 10 V ±25V 2700 pF @ 25 V - 3.75W (Ta), 155W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TPIC5302D

TPIC5302D

N-CHANNEL POWER MOSFET

Texas Instruments
969 -

RFQ

TPIC5302D

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF1405ZSTRLPBF

IRF1405ZSTRLPBF

PFET, 75A I(D), 55V, 0.0049OHM

International Rectifier
437 -

RFQ

IRF1405ZSTRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ)
STU6N90K5

STU6N90K5

MOSFET N-CH 900V 6A IPAK

STMicroelectronics
182 -

RFQ

STU6N90K5

Ficha técnica

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 900 V 6A (Tc) 10V 1.1Ohm @ 3A, 10V 5V @ 100µA - ±30V - - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF1405ZSPBF

IRF1405ZSPBF

MOSFET N-CH 55V 75A TO263-3-2

International Rectifier
250 -

RFQ

IRF1405ZSPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK2378

2SK2378

N-CHANNEL POWER MOSFET

onsemi
5,612 -

RFQ

2SK2378

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SJ651

2SJ651

MOSFET P-CH 60V 20A TO220ML

onsemi
4,569 -

RFQ

2SJ651

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) - 60mOhm @ 10A, 10V - 45 nC @ 10 V - 2200 pF @ 20 V - 2W (Ta), 25W (Tc) 150°C (TJ) Through Hole
2SK1283-AZ

2SK1283-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,431 -

RFQ

2SK1283-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP019N06NF2SAKMA1

IPP019N06NF2SAKMA1

TRENCH 40<-<100V PG-TO220-3

Infineon Technologies
998 -

RFQ

IPP019N06NF2SAKMA1

Ficha técnica

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 33A (Ta), 185A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.3V @ 129µA 162 nC @ 10 V ±20V 7300 pF @ 30 V - 3.8W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK1283(1)-AZ

2SK1283(1)-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
961 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
Total 42446 Record«Prev1... 5455565758596061...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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