Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFP7N40

RFP7N40

N-CHANNEL POWER MOSFET

Harris Corporation
471 -

RFQ

RFP7N40

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 7A (Tc) 10V 750mOhm @ 3.5A, 10V 4V @ 1mA - ±20V 1600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDI9406_F085

FDI9406_F085

110A, 40V, 0.0022OHM, N-CHANNEL

Fairchild Semiconductor
400 -

RFQ

FDI9406_F085

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 2.2mOhm @ 80A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 7710 pF @ 25 V - 176W (Tj) -55°C ~ 175°C (TJ) Through Hole
STP7LN80K5

STP7LN80K5

MOSFET N-CH 800V 5A TO220

STMicroelectronics
955 -

RFQ

STP7LN80K5

Ficha técnica

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 1.15Ohm @ 2.5A, 10V 5V @ 100µA 12 nC @ 10 V ±30V 270 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBE30PBF-BE3

IRFBE30PBF-BE3

MOSFET N-CH 800V 4.1A TO220AB

Vishay Siliconix
944 -

RFQ

IRFBE30PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) - 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW07N60CFD

SPW07N60CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
2,922 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK4007DPP-00#T2

RJK4007DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
393 -

RFQ

RJK4007DPP-00#T2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RCJ331N25TL

RCJ331N25TL

250V 33A, NCH, TO-263S, POWER MO

Rohm Semiconductor
1,000 -

RFQ

RCJ331N25TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 33A (Tc) 10V 105mOhm @ 16.5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 4500 pF @ 25 V - 1.56W (Ta), 211W (Tc) 150°C (TJ) Surface Mount
RCJ451N20TL

RCJ451N20TL

200V 45A, NCH, TO-263S, POWER MO

Rohm Semiconductor
1,000 -

RFQ

RCJ451N20TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 45A (Tc) 10V 55mOhm @ 22.5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 4200 pF @ 25 V - 1.56W (Ta), 211W (Tc) 150°C (TJ) Surface Mount
IPW50R299CP

IPW50R299CP

N-CHANNEL POWER MOSFET

Infineon Technologies
9,838 -

RFQ

IPW50R299CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 31 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP12N60

FQP12N60

MOSFET N-CH 600V 10.5A TO220-3

Fairchild Semiconductor
9,664 -

RFQ

FQP12N60

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.5A (Tc) 10V 700mOhm @ 5.3A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1900 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF250N65S3R0L-F154

FCPF250N65S3R0L-F154

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
972 -

RFQ

FCPF250N65S3R0L-F154

Ficha técnica

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tj) 10V 250mOhm @ 6A, 10V 4.5V @ 290µA 24 nC @ 10 V ±30V 1010 pF @ 400 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF13N50

FQPF13N50

MOSFET N-CH 500V 12.5A TO220F

Fairchild Semiconductor
2,475 -

RFQ

FQPF13N50

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12.5A (Tc) 10V 430mOhm @ 6.25A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2300 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF6N90

FQAF6N90

MOSFET N-CH 900V 4.5A TO3PF

Fairchild Semiconductor
1,785 -

RFQ

FQAF6N90

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 4.5A (Tc) 10V 1.9Ohm @ 2.3A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1880 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF27N25

FQAF27N25

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,440 -

RFQ

FQAF27N25

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 250 V 19A (Tc) 10V 110mOhm @ 9.5A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 2450 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL630PBF-BE3

IRL630PBF-BE3

MOSFET N-CH 200V 9A TO220AB

Vishay Siliconix
1,000 -

RFQ

IRL630PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) - 400mOhm @ 5.4A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP141

IRFP141

N-CHANNEL POWER MOSFET

Harris Corporation
288 -

RFQ

IRFP141

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 31A (Tc) 10V 77mOhm @ 19A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1275 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP14N60E-BE3

SIHP14N60E-BE3

N-CHANNEL 600V

Vishay Siliconix
995 -

RFQ

SIHP14N60E-BE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK03L3DNS-WS#J5

RJK03L3DNS-WS#J5

N CHANNEL POWER MOS FET

Renesas Electronics America Inc
4,950 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA1728G-E1-AT

UPA1728G-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,284 -

RFQ

UPA1728G-E1-AT

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 9A (Ta) - 26mOhm @ 4.5A, 10V 2.5V @ 1mA 31 nC @ 10 V - 1700 pF @ 10 V - - - Surface Mount
NP36N055HLE-AY

NP36N055HLE-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,000 -

RFQ

NP36N055HLE-AY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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