Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SSM6J512NU,LF

SSM6J512NU,LF

MOSFET P-CH 12V 10A 6UDFNB

Toshiba Semiconductor and Storage
49,043 -

RFQ

SSM6J512NU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII Active P-Channel MOSFET (Metal Oxide) 12 V 10A (Ta) 1.8V, 8V 16.2mOhm @ 4A, 8V 1V @ 1mA 19.5 nC @ 4.5 V ±10V 1400 pF @ 6 V - 1.25W (Ta) 150°C (TJ) Surface Mount
SSM3K123TU,LF

SSM3K123TU,LF

MOSFET N-CH 20V 4.2A UFM

Toshiba Semiconductor and Storage
21,568 -

RFQ

SSM3K123TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 1.5V, 4V 28mOhm @ 3A, 4V 1V @ 1mA 13.6 nC @ 4 V ±10V 1010 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3J378R,LXHF

SSM3J378R,LXHF

AECQ MOSFET PCH -20V -6A SOT23F

Toshiba Semiconductor and Storage
13,541 -

RFQ

SSM3J378R,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.5V, 4.5V 29.8mOhm @ 3A, 4.5V 1V @ 1mA 12.8 nC @ 4.5 V +6V, -8V 840 pF @ 10 V - 1W (Ta) 150°C Surface Mount
SSM3K2615TU,LF

SSM3K2615TU,LF

MOSFET N-CH 60V 2A UFM

Toshiba Semiconductor and Storage
11,193 -

RFQ

SSM3K2615TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSV Active N-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 3.3V, 10V 300mOhm @ 1A, 10V 2V @ 1mA 6 nC @ 10 V ±20V 150 pF @ 10 V - 800mW (Ta) 150°C Surface Mount
2SK209-BL(TE85L,F)

2SK209-BL(TE85L,F)

TRANS SJT N-CH 10MA SC59

Toshiba Semiconductor and Storage
2,710 -

RFQ

2SK209-BL(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 50 V 10mA (Ta) - - - - - 13 pF @ 10 V - 150mW (Ta) -55°C ~ 125°C (TA) Surface Mount
SSM6K810R,LF

SSM6K810R,LF

SMALL SIGNAL MOSFET N-CH VDSS=10

Toshiba Semiconductor and Storage
3,698 -

RFQ

SSM6K810R,LF

Ficha técnica

Tape & Reel (TR) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 3.5A (Ta) 4.5V, 10V 69mOhm @ 2A, 10V 2.5V @ 100µA 3.2 nC @ 4.5 V ±20V 430 pF @ 15 V - 1.5W (Ta) 175°C Surface Mount
SSM3K361TU,LF

SSM3K361TU,LF

MOSFET N-CH 100V 3.5A UFM

Toshiba Semiconductor and Storage
5,613 -

RFQ

SSM3K361TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 3.5A (Ta) 4.5V, 10V 69mOhm @ 2A, 10V 2.5V @ 100µA 3.2 nC @ 4.5 V ±20V 430 pF @ 15 V - 1W (Ta) 175°C Surface Mount
2SK209-GR(TE85L,F)

2SK209-GR(TE85L,F)

TRANS SJT N-CH 10MA SC59

Toshiba Semiconductor and Storage
14,677 -

RFQ

2SK209-GR(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) - 10mA (Ta) - - - - - 13 pF @ 10 V - 150mW (Ta) -55°C ~ 125°C (TA) Surface Mount
SSM6K514NU,LF

SSM6K514NU,LF

MOSFET N-CH 40V 12A 6UDFNB

Toshiba Semiconductor and Storage
5,240 -

RFQ

SSM6K514NU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 12A (Ta) 4.5V, 10V 11.6mOhm @ 4A, 10V 2.4V @ 100µA 7.5 nC @ 4.5 V ±20V 1110 pF @ 20 V - 2.5W (Ta) 150°C Surface Mount
SSM6K202FE,LF

SSM6K202FE,LF

MOSFET N-CH 30V 2.3A ES6

Toshiba Semiconductor and Storage
15,994 -

RFQ

SSM6K202FE,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 2.3A (Ta) 1.8V, 4V 85mOhm @ 1.5A, 4V 1V @ 1mA - ±12V 270 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3J132TU,LF

SSM3J132TU,LF

MOSFET P-CH 12V 5.4A UFM

Toshiba Semiconductor and Storage
15,645 -

RFQ

SSM3J132TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 12 V 5.4A (Ta) 1.2V, 4.5V 17mOhm @ 5A, 4.5V 1V @ 1mA 33 nC @ 4.5 V ±6V 2700 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
TPN19008QM,LQ

TPN19008QM,LQ

MOSFET N-CH 80V 34A 8TSON

Toshiba Semiconductor and Storage
8,292 -

RFQ

TPN19008QM,LQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 34A (Tc) 6V, 10V 19mOhm @ 17A, 10V 3.5V @ 200µA 16 nC @ 10 V ±20V 1400 pF @ 40 V - 630mW (Ta), 57W (Tc) 175°C Surface Mount
TPN5R203PL,LQ

TPN5R203PL,LQ

MOSFET N-CH 30V 38A 8TSON

Toshiba Semiconductor and Storage
4,070 -

RFQ

TPN5R203PL,LQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 5.2mOhm @ 19A, 10V 2.1V @ 200µA 22 nC @ 10 V ±20V 1975 pF @ 15 V - 610mW (Ta), 61W (Tc) 175°C Surface Mount
2SJ438(AISIN,A,Q)

2SJ438(AISIN,A,Q)

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage
3,299 -

RFQ

2SJ438(AISIN,A,Q)

Ficha técnica

Bulk - Obsolete - - - 5A (Tj) - - - - - - - - - Through Hole
2SJ438(AISIN,Q,M)

2SJ438(AISIN,Q,M)

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage
2,965 -

RFQ

2SJ438(AISIN,Q,M)

Ficha técnica

Bulk - Obsolete - - - 5A (Tj) - - - - - - - - - Through Hole
2SJ438(CANO,A,Q)

2SJ438(CANO,A,Q)

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage
2,926 -

RFQ

2SJ438(CANO,A,Q)

Ficha técnica

Bulk - Obsolete - - - 5A (Tj) - - - - - - - - - Through Hole
2SJ438(CANO,Q,M)

2SJ438(CANO,Q,M)

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage
3,737 -

RFQ

2SJ438(CANO,Q,M)

Ficha técnica

Bulk - Obsolete - - - 5A (Tj) - - - - - - - - - Through Hole
2SJ438,MDKQ(J

2SJ438,MDKQ(J

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage
3,905 -

RFQ

2SJ438,MDKQ(J

Ficha técnica

Bulk - Obsolete - - - 5A (Tj) - - - - - - - - - Through Hole
2SJ438,MDKQ(M

2SJ438,MDKQ(M

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage
2,315 -

RFQ

2SJ438,MDKQ(M

Ficha técnica

Bulk - Obsolete - - - 5A (Tj) - - - - - - - - - Through Hole
2SJ438,Q(J

2SJ438,Q(J

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage
3,860 -

RFQ

2SJ438,Q(J

Ficha técnica

Bulk - Obsolete - - - 5A (Tj) - - - - - - - - - Through Hole
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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