Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SSM3J377R,LF

SSM3J377R,LF

MOSFET P-CH 20V 3.9A SOT23F

Toshiba Semiconductor and Storage
3,154 -

RFQ

SSM3J377R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 3.9A (Ta) 1.5V, 4.5V 93mOhm @ 1.5A, 4.5V 1V @ 1mA 4.6 nC @ 4.5 V +6V, -8V 290 pF @ 10 V - 1W (Ta) 150°C Surface Mount
SSM3J325F,LF

SSM3J325F,LF

MOSFET P-CH 20V 2A S-MINI

Toshiba Semiconductor and Storage
5,216 -

RFQ

SSM3J325F,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.5V, 4.5V 150mOhm @ 1A, 4.5V - 4.6 nC @ 4.5 V ±8V 270 pF @ 10 V - 600mW (Ta) 150°C (TJ) Surface Mount
SSM3J374R,LF

SSM3J374R,LF

MOSFET P-CH 30V 4A SOT23F

Toshiba Semiconductor and Storage
22,150 -

RFQ

SSM3J374R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4V, 10V 71mOhm @ 3A, 10V 2V @ 100µA 5.9 nC @ 10 V +10V, -20V 280 pF @ 15 V - 1W (Ta) 150°C Surface Mount
SSM3J375F,LF

SSM3J375F,LF

MOSFET P-CH 20V 2A S-MINI

Toshiba Semiconductor and Storage
19,825 -

RFQ

SSM3J375F,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.5V, 4.5V 150mOhm @ 1A, 4.5V 1V @ 1mA 4.6 nC @ 4.5 V +6V, -8V 270 pF @ 10 V - 600mW (Ta) 150°C Surface Mount
SSM3J371R,LF

SSM3J371R,LF

MOSFET P-CH 20V 4A SOT23F

Toshiba Semiconductor and Storage
18,736 -

RFQ

SSM3J371R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.5V, 4.5V 55mOhm @ 3A, 4.5V 1V @ 1mA 10.4 nC @ 4.5 V +6V, -8V 630 pF @ 10 V - 1W (Ta) 150°C Surface Mount
SSM3J340R,LF

SSM3J340R,LF

MOSFET P-CH 30V 4A SOT23F

Toshiba Semiconductor and Storage
22,880 -

RFQ

SSM3J340R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4V, 10V 45mOhm @ 4A, 10V 2.2V @ 250µA 6.2 nC @ 4.5 V +20V, -25V 492 pF @ 10 V - 1W (Ta) 150°C Surface Mount
SSM3J353F,LF

SSM3J353F,LF

MOSFET P-CH 30V 2A S-MINI

Toshiba Semiconductor and Storage
15,993 -

RFQ

SSM3J353F,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4V, 10V 150mOhm @ 2A, 10V 2.2V @ 250µA 3.4 nC @ 4.5 V +20V, -25V 159 pF @ 15 V - 600mW (Ta) 150°C Surface Mount
SSM3K345R,LF

SSM3K345R,LF

MOSFET N-CHANNEL 20V 4A SOT23F

Toshiba Semiconductor and Storage
32,440 -

RFQ

SSM3K345R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active N-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.5V, 4.5V 33mOhm @ 4A, 4.5V 1V @ 1mA 3.6 nC @ 4.5 V ±8V 410 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM6K204FE,LF

SSM6K204FE,LF

MOSFET N-CH 20V 2A ES6

Toshiba Semiconductor and Storage
3,435 -

RFQ

SSM6K204FE,LF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.5V, 4V 126mOhm @ 1A, 4V 1V @ 1mA 3.4 nC @ 10 V ±10V 195 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
SSM6K217FE,LF

SSM6K217FE,LF

MOSFET N-CH 40V 1.8A ES6

Toshiba Semiconductor and Storage
39,990 -

RFQ

SSM6K217FE,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 40 V 1.8A (Ta) 1.8V, 8V 195mOhm @ 1A, 8V 1.2V @ 1mA 1.1 nC @ 4.2 V ±12V 130 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3J377R,LXHF

SSM3J377R,LXHF

AECQ MOSFET PCH 20V 3.9A SOT23

Toshiba Semiconductor and Storage
9,416 -

RFQ

SSM3J377R,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 3.9A (Ta) 1.5V, 4.5V 93mOhm @ 1.5A, 4.5V 1V @ 1mA 4.6 nC @ 4.5 V +6V, -8V 290 pF @ 10 V - 1W (Ta) 150°C Surface Mount
SSM3K347R,LF

SSM3K347R,LF

MOSFET N-CH 38V 2A SOT23F

Toshiba Semiconductor and Storage
13,869 -

RFQ

SSM3K347R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIV Active N-Channel MOSFET (Metal Oxide) 38 V 2A (Ta) 4V, 10V 340mOhm @ 1A, 10V 2.4V @ 1mA 2.5 nC @ 10 V ±20V 86 pF @ 10 V - 2W (Ta) 150°C Surface Mount
SSM3K335R,LF

SSM3K335R,LF

MOSFET N CH 30V 6A SOT-23F

Toshiba Semiconductor and Storage
7,241 -

RFQ

SSM3K335R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 4.5V, 10V 38mOhm @ 4A, 10V 2.5V @ 100µA 2.7 nC @ 4.5 V ±20V 340 pF @ 15 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3K344R,LF

SSM3K344R,LF

MOSFET N-CH 20V 3A SOT23F

Toshiba Semiconductor and Storage
39,719 -

RFQ

SSM3K344R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.5V, 4.5V 71mOhm @ 3A, 4.5V 1V @ 1mA 2 nC @ 4 V ±8V 153 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM6H19NU,LF

SSM6H19NU,LF

MOSFET N-CH 40V 2A 6UDFN

Toshiba Semiconductor and Storage
52,240 -

RFQ

SSM6H19NU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 40 V 2A (Ta) 1.8V, 8V 185mOhm @ 1A, 8V 1.2V @ 1mA 2.2 nC @ 4.2 V ±12V 130 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM3J117TU,LF

SSM3J117TU,LF

MOSFET P-CHANNEL 30V 2A UFM

Toshiba Semiconductor and Storage
16,350 -

RFQ

SSM3J117TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSII Active P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4V, 10V 117mOhm @ 1A, 10V 2.6V @ 1mA - ±20V 280 pF @ 15 V - 500mW (Ta) 150°C Surface Mount
SSM3J145TU,LF

SSM3J145TU,LF

MOSFET P-CH 20V 3A UFM

Toshiba Semiconductor and Storage
14,281 -

RFQ

SSM3J145TU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.5V, 4.5V 103mOhm @ 1A, 4.5V 1V @ 1mA 4.6 nC @ 4.5 V +6V, -8V 270 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
SSM3J375F,LXHF

SSM3J375F,LXHF

AECQ MOSFET PCH -20V -2A SOT346

Toshiba Semiconductor and Storage
21,258 -

RFQ

SSM3J375F,LXHF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.5V, 4.5V 150mOhm @ 1A, 4.5V 1V @ 1mA 4.6 nC @ 4.5 V +6V, -8V 270 pF @ 10 V - 600mW (Ta) 150°C Surface Mount
SSM6J214FE(TE85L,F

SSM6J214FE(TE85L,F

MOSFET P-CH 30V 3.6A ES6

Toshiba Semiconductor and Storage
25,896 -

RFQ

SSM6J214FE(TE85L,F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 1.8V, 10V 50mOhm @ 3A, 10V 1.2V @ 1mA 7.9 nC @ 4.5 V ±12V 560 pF @ 15 V - 500mW (Ta) 150°C Surface Mount
SSM3K318R,LF

SSM3K318R,LF

MOSFET N-CH 60V 2.5A SOT23F

Toshiba Semiconductor and Storage
3,085 -

RFQ

SSM3K318R,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIV Active N-Channel MOSFET (Metal Oxide) 60 V 2.5A (Ta) 4.5V, 10V 107mOhm @ 2A, 10V 2.8V @ 1mA 7 nC @ 10 V ±20V 235 pF @ 30 V - 1W (Ta) 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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