Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SSM3J307T(TE85L,F)

SSM3J307T(TE85L,F)

MOSFET P-CH 20V 5A TSM

Toshiba Semiconductor and Storage
3,964 -

RFQ

SSM3J307T(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSV Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 1.5V, 4.5V 31mOhm @ 4A, 4.5V 1V @ 1mA 19 nC @ 4.5 V ±8V 1170 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
SSM3J321T(TE85L,F)

SSM3J321T(TE85L,F)

MOSFET P-CH 20V 5.2A TSM

Toshiba Semiconductor and Storage
2,189 -

RFQ

SSM3J321T(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSV Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.2A (Ta) 1.5V, 4.5V 46mOhm @ 3A, 4.5V 1V @ 1mA 8.1 nC @ 4.5 V ±8V 640 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
SSM3K315T(TE85L,F)

SSM3K315T(TE85L,F)

MOSFET N-CH 30V 6A TSM

Toshiba Semiconductor and Storage
3,054 -

RFQ

SSM3K315T(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 4.5V, 10V 27.6mOhm @ 4A, 10V 2.5V @ 1mA 10.1 nC @ 10 V ±20V 450 pF @ 15 V - 700mW (Ta) 150°C (TJ) Surface Mount
SSM3K316T(TE85L,F)

SSM3K316T(TE85L,F)

MOSFET N-CH 30V 4A TSM

Toshiba Semiconductor and Storage
2,701 -

RFQ

SSM3K316T(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 1.8V, 10V 53mOhm @ 3A, 10V 1V @ 1mA 4.3 nC @ 4 V ±12V 270 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
SSM3K7002BSU,LF

SSM3K7002BSU,LF

MOSFET N-CH 60V 200MA USM

Toshiba Semiconductor and Storage
2,345 -

RFQ

SSM3K7002BSU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 2.1Ohm @ 500mA, 10V 3.1V @ 250µA - ±20V 17 pF @ 25 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM4K27CTTPL3

SSM4K27CTTPL3

MOSFET N-CH 20V 500MA CST4

Toshiba Semiconductor and Storage
3,619 -

RFQ

SSM4K27CTTPL3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Obsolete N-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.8V, 4V 205mOhm @ 250mA, 4V 1.1V @ 1mA - ±12V 174 pF @ 10 V - 400mW (Ta) 150°C (TJ) Surface Mount
SSM5H12TU(TE85L,F)

SSM5H12TU(TE85L,F)

MOSFET N-CH 30V 1.9A UFV

Toshiba Semiconductor and Storage
3,063 -

RFQ

SSM5H12TU(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Obsolete N-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta) 1.8V, 4V 133mOhm @ 1A, 4V 1V @ 1mA 1.9 nC @ 4 V ±12V 123 pF @ 15 V Schottky Diode (Isolated) 500mW (Ta) 150°C (TJ) Surface Mount
SSM6J409TU(TE85L,F

SSM6J409TU(TE85L,F

MOSFET P-CH 20V 9.5A UF6

Toshiba Semiconductor and Storage
2,456 -

RFQ

SSM6J409TU(TE85L,F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSV Obsolete P-Channel MOSFET (Metal Oxide) 20 V 9.5A (Ta) 1.5V, 4.5V 22.1mOhm @ 3A, 4.5V 1V @ 1mA 15 nC @ 4.5 V ±8V 1100 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SSM6J53FE(TE85L,F)

SSM6J53FE(TE85L,F)

MOSFET P-CH 20V 1.8A ES6

Toshiba Semiconductor and Storage
3,093 -

RFQ

SSM6J53FE(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.8A (Ta) 1.5V, 2.5V 136mOhm @ 1A, 2.5V 1V @ 1mA 10.6 nC @ 4 V ±8V 568 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
TK14A65W5,S5X

TK14A65W5,S5X

MOSFET N-CH 650V 13.7A TO220SIS

Toshiba Semiconductor and Storage
2,672 -

RFQ

TK14A65W5,S5X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V 4.5V @ 690µA 40 nC @ 10 V ±30V 1300 pF @ 300 V - 40W (Tc) 150°C (TJ) Through Hole
TK12E80W,S1X

TK12E80W,S1X

MOSFET N-CH 800V 11.5A TO220

Toshiba Semiconductor and Storage
2,125 -

RFQ

TK12E80W,S1X

Ficha técnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 11.5A (Ta) 10V 450mOhm @ 5.8A, 10V 4V @ 570µA 23 nC @ 10 V ±20V 1400 pF @ 300 V - 165W (Tc) 150°C Through Hole
TK13A65U(STA4,Q,M)

TK13A65U(STA4,Q,M)

MOSFET N-CH 650V 13A TO220SIS

Toshiba Semiconductor and Storage
3,101 -

RFQ

TK13A65U(STA4,Q,M)

Ficha técnica

Tube DTMOSII Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13A (Ta) 10V 380mOhm @ 6.5A, 10V 5V @ 1mA 17 nC @ 10 V ±30V 950 pF @ 10 V - 40W (Tc) 150°C (TJ) Through Hole
TK4A60D(STA4,Q,M)

TK4A60D(STA4,Q,M)

MOSFET N-CH 600V 4A TO220SIS

Toshiba Semiconductor and Storage
2,167 -

RFQ

TK4A60D(STA4,Q,M)

Ficha técnica

Tube π-MOSVII Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Ta) 10V 1.7Ohm @ 2A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
SSM3K106TU(TE85L)

SSM3K106TU(TE85L)

MOSFET N-CH 20V 1.2A UFM

Toshiba Semiconductor and Storage
3,532 -

RFQ

SSM3K106TU(TE85L)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 4V, 10V 310mOhm @ 600mA, 10V 2.3V @ 100µA - ±20V 36 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3K15CT(TPL3)

SSM3K15CT(TPL3)

MOSFET N-CH 30V 100MA CST3

Toshiba Semiconductor and Storage
3,161 -

RFQ

SSM3K15CT(TPL3)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 7.8 pF @ 3 V - 100mW (Ta) 150°C (TJ) Surface Mount
SSM3K15FS,LF

SSM3K15FS,LF

MOSFET N-CH 30V 100MA SSM

Toshiba Semiconductor and Storage
3,207 -

RFQ

SSM3K15FS,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 7.8 pF @ 3 V - 200mW (Ta) 150°C (TJ) Surface Mount
SSM3K303T(TE85L,F)

SSM3K303T(TE85L,F)

MOSFET N-CH 30V 2.9A TSM

Toshiba Semiconductor and Storage
2,554 -

RFQ

SSM3K303T(TE85L,F)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSVII Obsolete N-Channel MOSFET (Metal Oxide) 30 V 2.9A (Ta) 4V, 10V 83mOhm @ 1.5A, 10V 2.6V @ 1mA 3.3 nC @ 4 V ±20V 180 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
SSM3K35MFV(TPL3)

SSM3K35MFV(TPL3)

MOSFET N-CH 20V 180MA VESM

Toshiba Semiconductor and Storage
3,149 -

RFQ

SSM3K35MFV(TPL3)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Active N-Channel MOSFET (Metal Oxide) 20 V 180mA (Ta) 1.2V, 4V 3Ohm @ 50mA, 4V 1V @ 1mA - ±10V 9.5 pF @ 3 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM6J206FE(TE85L,F

SSM6J206FE(TE85L,F

MOSFET P-CH 20V 2A ES6

Toshiba Semiconductor and Storage
2,084 -

RFQ

SSM6J206FE(TE85L,F

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.8V, 4V 130mOhm @ 1A, 4V 1V @ 1mA - ±8V 335 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
TK50P03M1(T6RSS-Q)

TK50P03M1(T6RSS-Q)

MOSFET N-CH 30V 50A DP

Toshiba Semiconductor and Storage
2,973 -

RFQ

TK50P03M1(T6RSS-Q)

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Ta) 4.5V, 10V 7.5mOhm @ 25A, 10V 2.3V @ 200µA 25.3 nC @ 10 V ±20V 1700 pF @ 10 V - 47W (Tc) 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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