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Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SSM6J212FE,LF

SSM6J212FE,LF

MOSFET P-CH 20V 4A ES6

Toshiba Semiconductor and Storage 		2,020 -

RFQ

SSM6J212FE,LF

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.5V, 4.5V 40.7mOhm @ 3A, 4.5V 1V @ 1mA 14.1 nC @ 4.5 V ±8V 970 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM6J771G,LF

SSM6J771G,LF

MOSFET P-CH 20V 5A 6WCSP

Toshiba Semiconductor and Storage 		2,266 -

RFQ

SSM6J771G,LF

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 2.5V, 8.5V 31mOhm @ 3A, 8.5V 1.2V @ 1mA 9.8 nC @ 4.5 V ±12V 870 pF @ 10 V - 1.2W (Ta) 150°C (TJ) Surface Mount
TPN22006NH,LQ

TPN22006NH,LQ

MOSFET N-CH 60V 9A 8TSON

Toshiba Semiconductor and Storage 		2,333 -

RFQ

TPN22006NH,LQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 9A (Ta) 6.5V, 10V 22mOhm @ 4.5A, 10V 4V @ 100µA 12 nC @ 10 V ±20V 710 pF @ 30 V - 700mW (Ta), 18W (Tc) 150°C (TJ) Surface Mount
TK1K9A60F,S4X

TK1K9A60F,S4X

MOSFET N-CH 600V 3.7A TO220SIS

Toshiba Semiconductor and Storage 		3,080 -

RFQ

TK1K9A60F,S4X

Ficha técnica

 Tube U-MOSIX Active N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Ta) 10V 1.9Ohm @ 1.9A, 10V 4V @ 400µA 14 nC @ 10 V ±30V 490 pF @ 300 V - 30W (Tc) 150°C Through Hole
TK90S06N1L,LQ

TK90S06N1L,LQ

MOSFET N-CH 60V 90A TO252-3

Toshiba Semiconductor and Storage 		3,148 -

RFQ

TK90S06N1L,LQ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Ta) 4.5V, 10V 3.3mOhm @ 45A, 10V 2.5V @ 500µA 81 nC @ 10 V ±20V 5400 pF @ 10 V - 157W (Tc) 175°C (TJ) Surface Mount
TPN5900CNH,L1Q

TPN5900CNH,L1Q

MOSFET N-CH 150V 9A 8TSON

Toshiba Semiconductor and Storage 		2,876 -

RFQ

TPN5900CNH,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 150 V 9A (Ta) 10V 59mOhm @ 4.5A, 10V 4V @ 200µA 7 nC @ 10 V ±20V 600 pF @ 75 V - 700mW (Ta), 39W (Tc) 150°C (TJ) Surface Mount
TK35A08N1,S4X

TK35A08N1,S4X

MOSFET N-CH 80V 35A TO220SIS

Toshiba Semiconductor and Storage 		3,218 -

RFQ

TK35A08N1,S4X

Ficha técnica

 Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 35A (Tc) 10V 12.2mOhm @ 17.5A, 10V 4V @ 300µA 25 nC @ 10 V ±20V 1700 pF @ 40 V - 30W (Tc) 150°C (TJ) Through Hole
TPH1R403NL,L1Q

TPH1R403NL,L1Q

MOSFET N-CH 30V 60A 8SOP

Toshiba Semiconductor and Storage 		3,072 -

RFQ

TPH1R403NL,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Ta) 4.5V, 10V 1.4mOhm @ 30A, 10V 2.3V @ 500µA 46 nC @ 10 V ±20V 4400 pF @ 15 V - 1.6W (Ta), 64W (Tc) 150°C (TJ) Surface Mount
TK3A60DA(Q,M)

TK3A60DA(Q,M)

MOSFET N-CH 600V 2.5A TO220SIS

Toshiba Semiconductor and Storage 		2,639 -

RFQ

TK3A60DA(Q,M)

Ficha técnica

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 600 V 2.5A (Ta) 10V 2.8Ohm @ 1.3A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
TK58E06N1,S1X

TK58E06N1,S1X

MOSFET N-CH 60V 58A TO220

Toshiba Semiconductor and Storage 		3,921 -

RFQ

TK58E06N1,S1X

Ficha técnica

 Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 58A (Ta) 10V 5.4mOhm @ 29A, 10V 4V @ 500µA 46 nC @ 10 V ±20V 3400 pF @ 30 V - 110W (Tc) 150°C (TJ) Through Hole
TK34A10N1,S4X

TK34A10N1,S4X

MOSFET N-CH 100V 34A TO220SIS

Toshiba Semiconductor and Storage 		3,693 -

RFQ

TK34A10N1,S4X

Ficha técnica

 Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 34A (Tc) 10V 9.5mOhm @ 17A, 10V 4V @ 500µA 38 nC @ 10 V ±20V 2600 pF @ 50 V - 35W (Tc) 150°C (TJ) Through Hole
TK380A60Y,S4X

TK380A60Y,S4X

MOSFET N-CH 600V 9.7A TO220SIS

Toshiba Semiconductor and Storage 		3,777 -

RFQ

TK380A60Y,S4X

Ficha técnica

 Tube DTMOSV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Tc) 10V 380mOhm @ 4.9A, 10V 4V @ 360µA 20 nC @ 10 V ±30V 590 pF @ 300 V - 30W 150°C (TJ) Through Hole
TK560A65Y,S4X

TK560A65Y,S4X

MOSFET N-CH 650V 7A TO220SIS

Toshiba Semiconductor and Storage 		2,977 -

RFQ

TK560A65Y,S4X

Ficha técnica

 Tube DTMOSV Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 560mOhm @ 3.5A, 10V 4V @ 240µA 14.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W 150°C (TJ) Through Hole
TK8A60W5,S5VX

TK8A60W5,S5VX

MOSFET N-CH 600V 8A TO220SIS

Toshiba Semiconductor and Storage 		2,905 -

RFQ

TK8A60W5,S5VX

Ficha técnica

 Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Ta) 10V 540mOhm @ 4A, 10V 4.5V @ 400µA 22 nC @ 10 V ±30V 590 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
TK290A60Y,S4X

TK290A60Y,S4X

MOSFET N-CH 600V 11.5A TO220SIS

Toshiba Semiconductor and Storage 		3,023 -

RFQ

TK290A60Y,S4X

Ficha técnica

 Tube DTMOSV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Tc) 10V 290mOhm @ 5.8A, 10V 4V @ 450µA 25 nC @ 10 V ±30V 730 pF @ 300 V - 35W (Tc) 150°C (TJ) Through Hole
TK5A60W,S4VX

TK5A60W,S4VX

MOSFET N-CH 600V 5.4A TO220SIS

Toshiba Semiconductor and Storage 		3,589 -

RFQ

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 5.4A (Ta) 10V 900mOhm @ 2.7A, 10V 3.7V @ 270µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V Super Junction 30W (Tc) 150°C (TJ) Through Hole
TPH4R008NH,L1Q

TPH4R008NH,L1Q

MOSFET N-CH 80V 60A 8SOP

Toshiba Semiconductor and Storage 		2,807 -

RFQ

TPH4R008NH,L1Q

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 10V 4mOhm @ 30A, 10V 4V @ 1mA 59 nC @ 10 V ±20V 5300 pF @ 40 V - 1.6W (Ta), 78W (Tc) 150°C (TJ) Surface Mount
SSM3J114TU(T5L,T)

SSM3J114TU(T5L,T)

MOSFET P-CH 20V 1.8A UFM

Toshiba Semiconductor and Storage 		2,313 -

RFQ

SSM3J114TU(T5L,T)

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.8A (Ta) 1.5V, 4V 149mOhm @ 600mA, 4V 1V @ 1mA 7.7 nC @ 4 V ±8V 331 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3J120TU,LF

SSM3J120TU,LF

MOSFET P-CH 20V 4A UFM

Toshiba Semiconductor and Storage 		2,030 -

RFQ

SSM3J120TU,LF

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSIV Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.5V, 4V 38mOhm @ 3A, 4V 1V @ 1mA 22.3 nC @ 4 V ±8V 1484 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3J129TU(TE85L)

SSM3J129TU(TE85L)

MOSFET P-CH 20V 4.6A UFM

Toshiba Semiconductor and Storage 		3,211 -

RFQ

SSM3J129TU(TE85L)

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) U-MOSV Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.6A (Ta) 1.5V, 4.5V 46mOhm @ 3A, 4.5V 1V @ 1mA 8.1 nC @ 4.5 V ±8V 640 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
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