Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RJK0355DPA-WS#J0

RJK0355DPA-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,405 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPB65R380C6

IPB65R380C6

N-CHANNEL POWER MOSFET

Infineon Technologies
3,263 -

RFQ

IPB65R380C6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFD8P05SM9A

RFD8P05SM9A

P-CHANNEL POWER MOSFET

Harris Corporation
3,171 -

RFQ

RFD8P05SM9A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF654BFP001

IRF654BFP001

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,935 -

RFQ

IRF654BFP001

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 21A (Tc) 10V 140mOhm @ 10.5A, 10V 4V @ 250µA 123 nC @ 10 V ±30V 3400 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK0353DPA-WS#J0

RJK0353DPA-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,830 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK0355DPA-01#J0B

RJK0355DPA-01#J0B

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics America Inc
2,500 -

RFQ

RJK0355DPA-01#J0B

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 10.7mOhm @ 15A, 10V - 6.3 nC @ 4.5 V - 860 pF @ 10 V - 25W (Tc) 150°C (TJ) Surface Mount
RJK0351DPA-01#J0

RJK0351DPA-01#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK0394DPA-WS#J53

RJK0394DPA-WS#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics America Inc
1,055 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK0366DPA-WS#J0

RJK0366DPA-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,008 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRFD313

IRFD313

N-CHANNEL POWER MOSFET

Harris Corporation
900 -

RFQ

IRFD313

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 300mA (Tc) 10V 5Ohm @ 200mA, 10V 4V @ 250µA 7.5 nC @ 10 V ±20V 135 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK3305-S-AZ

2SK3305-S-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
884 -

RFQ

2SK3305-S-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RF1S45N06SM

RF1S45N06SM

N-CHANNEL POWER MOSFET

Harris Corporation
700 -

RFQ

RF1S45N06SM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 45A - - - - - - - - - Surface Mount
FQAF16N25

FQAF16N25

MOSFET N-CH 250V 12.4A TO3PF

Fairchild Semiconductor
682 -

RFQ

FQAF16N25

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 12.4A (Tc) 10V 230mOhm @ 6.2A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 1200 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK0351DPA-WS#J0

RJK0351DPA-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
410 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQAF16N25C

FQAF16N25C

MOSFET N-CH 250V 11.4A TO3PF

Fairchild Semiconductor
360 -

RFQ

FQAF16N25C

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 11.4A (Tc) 10V 270mOhm @ 5.7A, 10V 4V @ 250µA 53.5 nC @ 10 V ±30V 1080 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Through Hole
UPA2790GR-E1-A

UPA2790GR-E1-A

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
10,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RF1S50N06SM9A

RF1S50N06SM9A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
9,898 -

RFQ

RF1S50N06SM9A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2020 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75332P3

HUF75332P3

MOSFET N-CH 55V 60A TO220-3

Harris Corporation
9,713 -

RFQ

HUF75332P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 60A (Tc) 10V 19mOhm @ 60A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISL9N306AD3

ISL9N306AD3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
8,004 -

RFQ

ISL9N306AD3

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6mOhm @ 50A, 10V 3V @ 250µA 90 nC @ 10 V ±20V 3400 pF @ 15 V - 125W (Ta) -55°C ~ 175°C (TJ) Through Hole
UPA2719GR-E2-AT

UPA2719GR-E2-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
7,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
Total 42446 Record«Prev1... 4041424344454647...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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