Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF642R

IRF642R

N-CHANNEL POWER MOSFET

Harris Corporation
500 -

RFQ

IRF642R

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 220mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK2851TZ-E

2SK2851TZ-E

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
5,000 -

RFQ

2SK2851TZ-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NP32N055SHE-E1-AZ

NP32N055SHE-E1-AZ

N-CHANNEL POWER MOSFET

NEC Corporation
4,900 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NP22N055HLE-AY

NP22N055HLE-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,751 -

RFQ

NP22N055HLE-AY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA2450BTL(3)-E1-A

UPA2450BTL(3)-E1-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,000 -

RFQ

UPA2450BTL(3)-E1-A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NP32N055SHE-E1-AY

NP32N055SHE-E1-AY

MOSFET N-CH 55V 32A TO252

Renesas Electronics America Inc
2,500 -

RFQ

NP32N055SHE-E1-AY

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 32A (Tc) - 25mOhm @ 16A, 10V 4V @ 250µA 32 nC @ 10 V - 1600 pF @ 25 V - 1.2W (Ta), 66W (Tc) 175°C (TJ) Surface Mount
RJK0348DSP-00#J0

RJK0348DSP-00#J0

MOSFET N-CH 30V 22A 8SOP

Renesas Electronics America Inc
2,500 -

RFQ

RJK0348DSP-00#J0

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta) - 3.4mOhm @ 11A, 10V - 34 nC @ 4.5 V - 5100 pF @ 10 V - 2.5W (Ta) 150°C (TJ) Surface Mount
RJK0348DSP-WS#J0

RJK0348DSP-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,200 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NP22N055HLE-S16-AY

NP22N055HLE-S16-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,049 -

RFQ

NP22N055HLE-S16-AY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQPF6P25

FQPF6P25

MOSFET P-CH 250V 4.2A TO220F

Fairchild Semiconductor
4,162 -

RFQ

FQPF6P25

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 4.2A (Tc) 10V 1.1Ohm @ 2.1A, 10V 5V @ 250µA 27 nC @ 10 V ±30V 780 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD1057T4

STD1057T4

NFET DPAK SPCL 60V TR

onsemi
2,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUK953R5-60E,127

BUK953R5-60E,127

MOSFET N-CH 60V 120A TO220AB

NXP USA Inc.
2,400 -

RFQ

BUK953R5-60E,127

Ficha técnica

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Ta) - 3.4mOhm @ 25A, 10V 2.1V @ 1mA 95 nC @ 5 V ±10V 13490 pF @ 25 V - 293W (Ta) -55°C ~ 175°C (TJ) Through Hole
FQP11N40

FQP11N40

MOSFET N-CH 400V 11.4A TO220-3

Fairchild Semiconductor
1,919 -

RFQ

FQP11N40

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 11.4A (Tc) 10V 480mOhm @ 5.7A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 1400 pF @ 25 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB022N04LG

IPB022N04LG

N-CHANNEL POWER MOSFET

Infineon Technologies
1,840 -

RFQ

IPB022N04LG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RF1S45N03L

RF1S45N03L

N-CHANNEL POWER MOSFET

Harris Corporation
770 -

RFQ

RF1S45N03L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 5V 22mOhm @ 45A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1650 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI100N04S3-03

IPI100N04S3-03

N-CHANNEL POWER MOSFET

Infineon Technologies
722 -

RFQ

IPI100N04S3-03

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDD5810

FDD5810

MOSFET N-CH 60V 7.4A/37A DPAK

Fairchild Semiconductor
540 -

RFQ

FDD5810

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 7.4A (Ta), 37A (Tc) 5V, 10V 22mOhm @ 32A, 10V 2V @ 250µA 34 nC @ 10 V ±20V 1890 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPI07N65C3

SPI07N65C3

N-CHANNEL POWER MOSFET

Infineon Technologies
500 -

RFQ

SPI07N65C3

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPI07N65C3IN

SPI07N65C3IN

N-CHANNEL POWER MOSFET

Infineon Technologies
2,868 -

RFQ

SPI07N65C3IN

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK03J0DPA-00#J5A

RJK03J0DPA-00#J5A

N-CHANNEL POWER SWITCHING MOSFET

Renesas Electronics America Inc
9,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
Total 42446 Record«Prev1... 3839404142434445...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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